Overview
The FQD3P50TM-AM002BLT is a P-Channel enhancement mode power MOSFET produced by onsemi. This device is fabricated using onsemi’s proprietary planar stripe and DMOS technology, which is designed to reduce on-state resistance and provide superior switching performance along with high avalanche energy strength. It is suitable for various high-performance applications, including switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Key Specifications
Parameter | Value | Unit |
---|---|---|
Drain-Source Voltage (VDSS) | -500 | V |
Continuous Drain Current (ID) at TC = 25°C | -2.1 | A |
Pulsed Drain Current (IDM) | -8.4 | A |
Gate-Source Voltage (VGS) | ±30 | V |
Static Drain-Source On-Resistance (RDS(on)) at VGS = -10 V, ID = -1.05 A | 4.9 | Ω |
Power Dissipation (PD) at TA = 25°C | 2.5 | W |
Operating and Storage Temperature Range | -55 to +150 | °C |
Thermal Resistance, Junction-to-Case (RθJC) | 2.5 | °C/W |
Thermal Resistance, Junction-to-Ambient (RθJA) | 50 | °C/W |
Key Features
- Low Gate Charge (Typ. 18 nC)
- Low Crss (Typ. 9.5 pF)
- 100% Avalanche Tested
- Pb-Free and RoHS Compliant
- Superior switching performance and high avalanche energy strength
- Low on-state resistance
Applications
- Switched mode power supplies
- Active power factor correction (PFC)
- Electronic lamp ballasts
Q & A
- What is the maximum drain-source voltage of the FQD3P50TM-AM002BLT MOSFET?
The maximum drain-source voltage (VDSS) is -500 V.
- What is the continuous drain current rating at 25°C?
The continuous drain current (ID) at TC = 25°C is -2.1 A.
- What is the pulsed drain current rating?
The pulsed drain current (IDM) is -8.4 A.
- What is the gate-source voltage range?
The gate-source voltage (VGS) range is ±30 V.
- What is the typical on-state resistance?
The static drain-source on-resistance (RDS(on)) at VGS = -10 V, ID = -1.05 A is 4.9 Ω.
- What are the thermal resistance values for this MOSFET?
The thermal resistance, junction-to-case (RθJC) is 2.5 °C/W, and the thermal resistance, junction-to-ambient (RθJA) is 50 °C/W.
- Is the FQD3P50TM-AM002BLT Pb-Free and RoHS Compliant?
- What are some typical applications for this MOSFET?
Typical applications include switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
- What is the operating and storage temperature range for this device?
The operating and storage temperature range is -55 to +150 °C.
- What is the maximum power dissipation at 25°C?
The maximum power dissipation (PD) at TA = 25°C is 2.5 W.