FQD3P50TM-AM002BLT
  • Share:

onsemi FQD3P50TM-AM002BLT

Manufacturer No:
FQD3P50TM-AM002BLT
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 500V 2.1A TO252
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FQD3P50TM-AM002BLT is a P-Channel enhancement mode power MOSFET produced by onsemi. This device is fabricated using onsemi’s proprietary planar stripe and DMOS technology, which is designed to reduce on-state resistance and provide superior switching performance along with high avalanche energy strength. It is suitable for various high-performance applications, including switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDSS) -500 V
Continuous Drain Current (ID) at TC = 25°C -2.1 A
Pulsed Drain Current (IDM) -8.4 A
Gate-Source Voltage (VGS) ±30 V
Static Drain-Source On-Resistance (RDS(on)) at VGS = -10 V, ID = -1.05 A 4.9 Ω
Power Dissipation (PD) at TA = 25°C 2.5 W
Operating and Storage Temperature Range -55 to +150 °C
Thermal Resistance, Junction-to-Case (RθJC) 2.5 °C/W
Thermal Resistance, Junction-to-Ambient (RθJA) 50 °C/W

Key Features

  • Low Gate Charge (Typ. 18 nC)
  • Low Crss (Typ. 9.5 pF)
  • 100% Avalanche Tested
  • Pb-Free and RoHS Compliant
  • Superior switching performance and high avalanche energy strength
  • Low on-state resistance

Applications

  • Switched mode power supplies
  • Active power factor correction (PFC)
  • Electronic lamp ballasts

Q & A

  1. What is the maximum drain-source voltage of the FQD3P50TM-AM002BLT MOSFET?

    The maximum drain-source voltage (VDSS) is -500 V.

  2. What is the continuous drain current rating at 25°C?

    The continuous drain current (ID) at TC = 25°C is -2.1 A.

  3. What is the pulsed drain current rating?

    The pulsed drain current (IDM) is -8.4 A.

  4. What is the gate-source voltage range?

    The gate-source voltage (VGS) range is ±30 V.

  5. What is the typical on-state resistance?

    The static drain-source on-resistance (RDS(on)) at VGS = -10 V, ID = -1.05 A is 4.9 Ω.

  6. What are the thermal resistance values for this MOSFET?

    The thermal resistance, junction-to-case (RθJC) is 2.5 °C/W, and the thermal resistance, junction-to-ambient (RθJA) is 50 °C/W.

  7. Is the FQD3P50TM-AM002BLT Pb-Free and RoHS Compliant?
  8. What are some typical applications for this MOSFET?

    Typical applications include switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

  9. What is the operating and storage temperature range for this device?

    The operating and storage temperature range is -55 to +150 °C.

  10. What is the maximum power dissipation at 25°C?

    The maximum power dissipation (PD) at TA = 25°C is 2.5 W.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:2.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.9Ohm @ 1.05A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:23 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:660 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 50W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$0.58
1,277

Please send RFQ , we will respond immediately.

Related Product By Categories

FQD4P25TM-WS
FQD4P25TM-WS
onsemi
MOSFET P-CH 250V 3.1A DPAK
STB18N65M5
STB18N65M5
STMicroelectronics
MOSFET N-CH 650V 15A D2PAK
CSD17575Q3T
CSD17575Q3T
Texas Instruments
MOSFET N-CH 30V 60A 8VSON
STP11NK40Z
STP11NK40Z
STMicroelectronics
MOSFET N-CH 400V 9A TO220AB
STL220N6F7
STL220N6F7
STMicroelectronics
MOSFET N-CH 60V 120A POWERFLAT
STV270N4F3
STV270N4F3
STMicroelectronics
MOSFET N-CH 40V 270A 10POWERSO
NTHL050N65S3HF
NTHL050N65S3HF
onsemi
MOSFET N-CH 650V 58A TO247-3
FDMC4435BZ-F127-L701
FDMC4435BZ-F127-L701
onsemi
SINGLE ST3 P Z MLP3.3X3.3
STF9N60M2
STF9N60M2
STMicroelectronics
MOSFET N-CH 600V 5.5A TO220FP
FQD2N60CTM
FQD2N60CTM
Fairchild Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 1
MCH3375-TL-W-Z
MCH3375-TL-W-Z
onsemi
MOSFET P-CH 30V 1.6A SC-70FL
PMZB290UN/FYL
PMZB290UN/FYL
NXP USA Inc.
PMZB290UN/FYL

Related Product By Brand

MURF860G
MURF860G
onsemi
DIODE GEN PURP 600V 8A TO220FP
SZMMBZ5226BLT1G
SZMMBZ5226BLT1G
onsemi
DIODE ZENER 3.3V 225MW SOT23-3
MMSZ16T1G
MMSZ16T1G
onsemi
DIODE ZENER 16V 500MW SOD123
SMUN5313DW1T1G
SMUN5313DW1T1G
onsemi
TRANS PREBIAS 1NPN 1PNP 50V SC88
BD679G
BD679G
onsemi
TRANS NPN DARL 80V 4A TO126
EMI4183MTTAG
EMI4183MTTAG
onsemi
CMC 100MA 6LN SMD ESD
NL27WZ08USG
NL27WZ08USG
onsemi
IC GATE AND 2CH 2-INP US8
MC74AC14DTR2G
MC74AC14DTR2G
onsemi
IC INVERTER 6CH 1-INP 14TSSOP
MC100EP16VBDTG
MC100EP16VBDTG
onsemi
IC RCVR/DRVR ECL DIFF 5V 8TSSOP
CAT24C512C8UTR
CAT24C512C8UTR
onsemi
IC EEPROM 512KBIT I2C 8WLCSP
NCV7707DQCR2G
NCV7707DQCR2G
onsemi
IC DOOR MODULE DRIVER 36SSOP
LM317MDTG
LM317MDTG
onsemi
IC REG LINEAR POS ADJ 500MA DPAK