FQD3P50TM-AM002BLT
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onsemi FQD3P50TM-AM002BLT

Manufacturer No:
FQD3P50TM-AM002BLT
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 500V 2.1A TO252
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FQD3P50TM-AM002BLT is a P-Channel enhancement mode power MOSFET produced by onsemi. This device is fabricated using onsemi’s proprietary planar stripe and DMOS technology, which is designed to reduce on-state resistance and provide superior switching performance along with high avalanche energy strength. It is suitable for various high-performance applications, including switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDSS) -500 V
Continuous Drain Current (ID) at TC = 25°C -2.1 A
Pulsed Drain Current (IDM) -8.4 A
Gate-Source Voltage (VGS) ±30 V
Static Drain-Source On-Resistance (RDS(on)) at VGS = -10 V, ID = -1.05 A 4.9 Ω
Power Dissipation (PD) at TA = 25°C 2.5 W
Operating and Storage Temperature Range -55 to +150 °C
Thermal Resistance, Junction-to-Case (RθJC) 2.5 °C/W
Thermal Resistance, Junction-to-Ambient (RθJA) 50 °C/W

Key Features

  • Low Gate Charge (Typ. 18 nC)
  • Low Crss (Typ. 9.5 pF)
  • 100% Avalanche Tested
  • Pb-Free and RoHS Compliant
  • Superior switching performance and high avalanche energy strength
  • Low on-state resistance

Applications

  • Switched mode power supplies
  • Active power factor correction (PFC)
  • Electronic lamp ballasts

Q & A

  1. What is the maximum drain-source voltage of the FQD3P50TM-AM002BLT MOSFET?

    The maximum drain-source voltage (VDSS) is -500 V.

  2. What is the continuous drain current rating at 25°C?

    The continuous drain current (ID) at TC = 25°C is -2.1 A.

  3. What is the pulsed drain current rating?

    The pulsed drain current (IDM) is -8.4 A.

  4. What is the gate-source voltage range?

    The gate-source voltage (VGS) range is ±30 V.

  5. What is the typical on-state resistance?

    The static drain-source on-resistance (RDS(on)) at VGS = -10 V, ID = -1.05 A is 4.9 Ω.

  6. What are the thermal resistance values for this MOSFET?

    The thermal resistance, junction-to-case (RθJC) is 2.5 °C/W, and the thermal resistance, junction-to-ambient (RθJA) is 50 °C/W.

  7. Is the FQD3P50TM-AM002BLT Pb-Free and RoHS Compliant?
  8. What are some typical applications for this MOSFET?

    Typical applications include switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

  9. What is the operating and storage temperature range for this device?

    The operating and storage temperature range is -55 to +150 °C.

  10. What is the maximum power dissipation at 25°C?

    The maximum power dissipation (PD) at TA = 25°C is 2.5 W.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:2.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.9Ohm @ 1.05A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:23 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:660 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 50W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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In Stock

$0.58
1,277

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