Overview
The FQD12N20LTM is an N-Channel enhancement mode power MOSFET produced by onsemi, utilizing their proprietary planar stripe and DMOS technology. This advanced technology is designed to reduce on-state resistance, enhance switching performance, and provide high avalanche energy strength. The device is particularly suited for applications in switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Key Specifications
| Parameter | Rating | Unit |
|---|---|---|
| Drain-Source Voltage (VDSS) | 200 | V |
| Drain Current (ID) - Continuous (TC = 25°C) | 9.0 | A |
| Drain Current (ID) - Continuous (TC = 100°C) | 5.7 | A |
| Drain Current (IDM) - Pulsed | 36 | A |
| Gate-Source Voltage (VGSS) | ±20 | V |
| Single Pulsed Avalanche Energy (EAS) | 210 | mJ |
| Avalanche Current (IAR) | 9.0 | A |
| Repetitive Avalanche Energy (EAR) | 5.5 | mJ |
| Peak Diode Recovery dv/dt | 5.5 | V/ns |
| Power Dissipation (PD) at TA = 25°C | 2.5 | W |
| Power Dissipation (PD) at TC = 25°C | 55 | W |
| Derate Above 25°C | 0.44 | W/°C |
| Operating and Storage Temperature Range (TJ, TSTG) | -55 to +150 | °C |
| Maximum Lead Temperature for Soldering | 300 | °C |
| Thermal Resistance, Junction to Case (RθJC) | 2.27 | °C/W |
| Thermal Resistance, Junction to Ambient (RθJA) | 110 | °C/W |
| Static Drain-Source On-Resistance (RDS(on)) at VGS = 10 V, ID = 4.5 A | 280 mΩ | mΩ |
| Total Gate Charge (Qg) | 16 nC | nC |
| Reverse Transfer Capacitance (Crss) | 17 pF | pF |
Key Features
- 9.0 A, 200 V, RDS(on) = 280 mΩ (Max.) @ VGS = 10 V, ID = 4.5 A
- Low Gate Charge (Typ. 16 nC)
- Low Crss (Typ. 17 pF)
- 100% Avalanche Tested
- Superior switching performance and high avalanche energy strength
Applications
The FQD12N20LTM is suitable for various high-performance applications, including:
- Switched mode power supplies
- Active power factor correction (PFC)
- Electronic lamp ballasts
Q & A
- What is the maximum drain-source voltage (VDSS) of the FQD12N20LTM?
The maximum drain-source voltage (VDSS) is 200 V.
- What is the continuous drain current (ID) at 25°C?
The continuous drain current (ID) at 25°C is 9.0 A.
- What is the maximum gate-source voltage (VGSS)?
The maximum gate-source voltage (VGSS) is ±20 V.
- What is the typical total gate charge (Qg)?
The typical total gate charge (Qg) is 16 nC.
- What is the thermal resistance from junction to case (RθJC)?
The thermal resistance from junction to case (RθJC) is 2.27 °C/W.
- What are the operating and storage temperature ranges?
The operating and storage temperature ranges are -55 to +150 °C.
- What is the maximum lead temperature for soldering?
The maximum lead temperature for soldering is 300 °C.
- What are the typical applications of the FQD12N20LTM?
The typical applications include switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
- What technology is used in the production of the FQD12N20LTM?
The FQD12N20LTM is produced using onsemi's proprietary planar stripe and DMOS technology.
- What is the maximum power dissipation at 25°C?
The maximum power dissipation at 25°C is 2.5 W for ambient temperature and 55 W for case temperature.
