FQB8P10TM
  • Share:

onsemi FQB8P10TM

Manufacturer No:
FQB8P10TM
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 100V 8A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FQB8P10TM is a standard 40V gate level power MOSFET produced by onsemi. This device is designed using onsemi's advanced technology to minimize on-state resistance and provide superior switching performance. It is particularly suited for motor driver applications and other low-voltage power management needs.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDSS) 40 V
Continuous Drain Current (ID) -6.6 A
Pulsed Drain Current (IDM) -26.4 A
Gate-Source Voltage (VGSS) ±30 V
Static Drain-Source On-Resistance (RDS(on)) 0.53 Ω @ VGS = -10 V Ω
Gate Threshold Voltage (VGS(th)) -2.0 to -4.0 V
Power Dissipation (PD) 2.5 W @ TA = 25°C W
Operating and Storage Temperature Range -55 to +150 °C

Key Features

  • Low on-state resistance (RDS(on) = 0.53 Ω @ VGS = -10 V)
  • Low gate charge (Typ. 12 nC)
  • Low Crss (Typ. 30 pF)
  • Fast switching capabilities
  • 100% avalanche tested
  • Improved dv/dt capability
  • Qualified to AEC-Q101
  • RoHS compliant

Applications

The FQB8P10TM is well-suited for various low-voltage applications, including:

  • Motor driver applications
  • Audio amplifiers
  • High efficiency switching DC/DC converters
  • DC motor control

Q & A

  1. What is the maximum drain-source voltage (VDSS) of the FQB8P10TM?

    The maximum drain-source voltage (VDSS) is 40 V.

  2. What is the continuous drain current (ID) rating of the FQB8P10TM at 25°C?

    The continuous drain current (ID) rating is -6.6 A at 25°C.

  3. What is the typical on-state resistance (RDS(on)) of the FQB8P10TM?

    The typical on-state resistance (RDS(on)) is 0.53 Ω at VGS = -10 V.

  4. Is the FQB8P10TM qualified to any automotive standards?

    Yes, it is qualified to AEC-Q101.

  5. What is the operating temperature range of the FQB8P10TM?

    The operating and storage temperature range is -55 to +150°C.

  6. What are some common applications for the FQB8P10TM?

    Common applications include motor drivers, audio amplifiers, high efficiency switching DC/DC converters, and DC motor control.

  7. Is the FQB8P10TM RoHS compliant?

    Yes, the FQB8P10TM is RoHS compliant.

  8. What is the maximum power dissipation (PD) of the FQB8P10TM at 25°C?

    The maximum power dissipation (PD) is 2.5 W at TA = 25°C.

  9. What is the gate threshold voltage (VGS(th)) range of the FQB8P10TM?

    The gate threshold voltage (VGS(th)) range is -2.0 to -4.0 V.

  10. Does the FQB8P10TM have any special testing or certifications?

    Yes, it is 100% avalanche tested and has improved dv/dt capability.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:530mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:470 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.75W (Ta), 65W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

$1.49
96

Please send RFQ , we will respond immediately.

Same Series
FQI8P10TU
FQI8P10TU
MOSFET P-CH 100V 8A I2PAK

Similar Products

Part Number FQB8P10TM FQB5P10TM
Manufacturer onsemi Fairchild Semiconductor
Product Status Last Time Buy Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc) 4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 530mOhm @ 4A, 10V 1.05Ohm @ 2.25A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V 8.2 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 470 pF @ 25 V 250 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 3.75W (Ta), 65W (Tc) 3.75W (Ta), 40W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package D²PAK (TO-263) D2PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

AO3407A
AO3407A
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 4.3A SOT23-3L
AO3400-5.8A
AO3400-5.8A
MDD
MOSFET SOT-23 N Channel 30V
FQT7N10LTF
FQT7N10LTF
onsemi
MOSFET N-CH 100V 1.7A SOT223-4
STD2NK100Z
STD2NK100Z
STMicroelectronics
MOSFET N-CH 1000V 1.85A DPAK
STP3NK90Z
STP3NK90Z
STMicroelectronics
MOSFET N-CH 900V 3A TO220AB
STD4NK60ZT4
STD4NK60ZT4
STMicroelectronics
MOSFET N-CH 600V 4A DPAK
STH315N10F7-6
STH315N10F7-6
STMicroelectronics
MOSFET N-CH 100V 180A H2PAK-6
NTMFS002P03P8ZT1G
NTMFS002P03P8ZT1G
onsemi
MOSFET, POWER -30V P-CHANNEL, SO
IRFP4668PBF
IRFP4668PBF
Infineon Technologies
MOSFET N-CH 200V 130A TO247AC
PMZB290UNE,315
PMZB290UNE,315
NXP USA Inc.
MOSFET N-CH 20V 1A DFN1006B-3
BUK9222-55A,118
BUK9222-55A,118
Nexperia USA Inc.
MOSFET N-CH 55V 48A DPAK
FDMC8010ET30
FDMC8010ET30
onsemi
MOSFET N-CH 30V 30A/174A POWER33

Related Product By Brand

MMSZ16T1G
MMSZ16T1G
onsemi
DIODE ZENER 16V 500MW SOD123
SBC847BPDXV6T1G
SBC847BPDXV6T1G
onsemi
TRANS NPN/PNP 45V 0.1A SOT-363
NVD5407NT4G
NVD5407NT4G
onsemi
MOSFET N-CH 40V 7.6A/38A DPAK
FDS4465-G
FDS4465-G
onsemi
MOSFET P-CH 20V 8SOIC
M74VHC1GT04DFT1G
M74VHC1GT04DFT1G
onsemi
IC INVERTER 1CH 1-INP SC88A
MC74HC00ADG
MC74HC00ADG
onsemi
IC GATE NAND 4CH 2-INP 14SOIC
NCS29001DR2G
NCS29001DR2G
onsemi
IC LED DRIVER CTRLR PWM 14SOIC
LC898121XA-MH
LC898121XA-MH
onsemi
IC MOTOR DRVR 2.6V-3.6V 40WLCSP
AMIS30521C5212G
AMIS30521C5212G
onsemi
IC MTRDRV BIPLR 4.75-5.25V 32QFP
NCP45495XMNTWG
NCP45495XMNTWG
onsemi
L MANGO
NCV4274ADS50R4G
NCV4274ADS50R4G
onsemi
IC REG LINEAR 5V 400MA D2PAK
MC33269DTRK-3.3
MC33269DTRK-3.3
onsemi
IC REG LDO 0.8A 3.3V DPAK