FQB8P10TM
  • Share:

onsemi FQB8P10TM

Manufacturer No:
FQB8P10TM
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 100V 8A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FQB8P10TM is a standard 40V gate level power MOSFET produced by onsemi. This device is designed using onsemi's advanced technology to minimize on-state resistance and provide superior switching performance. It is particularly suited for motor driver applications and other low-voltage power management needs.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDSS) 40 V
Continuous Drain Current (ID) -6.6 A
Pulsed Drain Current (IDM) -26.4 A
Gate-Source Voltage (VGSS) ±30 V
Static Drain-Source On-Resistance (RDS(on)) 0.53 Ω @ VGS = -10 V Ω
Gate Threshold Voltage (VGS(th)) -2.0 to -4.0 V
Power Dissipation (PD) 2.5 W @ TA = 25°C W
Operating and Storage Temperature Range -55 to +150 °C

Key Features

  • Low on-state resistance (RDS(on) = 0.53 Ω @ VGS = -10 V)
  • Low gate charge (Typ. 12 nC)
  • Low Crss (Typ. 30 pF)
  • Fast switching capabilities
  • 100% avalanche tested
  • Improved dv/dt capability
  • Qualified to AEC-Q101
  • RoHS compliant

Applications

The FQB8P10TM is well-suited for various low-voltage applications, including:

  • Motor driver applications
  • Audio amplifiers
  • High efficiency switching DC/DC converters
  • DC motor control

Q & A

  1. What is the maximum drain-source voltage (VDSS) of the FQB8P10TM?

    The maximum drain-source voltage (VDSS) is 40 V.

  2. What is the continuous drain current (ID) rating of the FQB8P10TM at 25°C?

    The continuous drain current (ID) rating is -6.6 A at 25°C.

  3. What is the typical on-state resistance (RDS(on)) of the FQB8P10TM?

    The typical on-state resistance (RDS(on)) is 0.53 Ω at VGS = -10 V.

  4. Is the FQB8P10TM qualified to any automotive standards?

    Yes, it is qualified to AEC-Q101.

  5. What is the operating temperature range of the FQB8P10TM?

    The operating and storage temperature range is -55 to +150°C.

  6. What are some common applications for the FQB8P10TM?

    Common applications include motor drivers, audio amplifiers, high efficiency switching DC/DC converters, and DC motor control.

  7. Is the FQB8P10TM RoHS compliant?

    Yes, the FQB8P10TM is RoHS compliant.

  8. What is the maximum power dissipation (PD) of the FQB8P10TM at 25°C?

    The maximum power dissipation (PD) is 2.5 W at TA = 25°C.

  9. What is the gate threshold voltage (VGS(th)) range of the FQB8P10TM?

    The gate threshold voltage (VGS(th)) range is -2.0 to -4.0 V.

  10. Does the FQB8P10TM have any special testing or certifications?

    Yes, it is 100% avalanche tested and has improved dv/dt capability.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:530mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:470 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.75W (Ta), 65W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

$1.49
96

Please send RFQ , we will respond immediately.

Same Series
FQI8P10TU
FQI8P10TU
MOSFET P-CH 100V 8A I2PAK

Similar Products

Part Number FQB8P10TM FQB5P10TM
Manufacturer onsemi Fairchild Semiconductor
Product Status Last Time Buy Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc) 4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 530mOhm @ 4A, 10V 1.05Ohm @ 2.25A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V 8.2 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 470 pF @ 25 V 250 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 3.75W (Ta), 65W (Tc) 3.75W (Ta), 40W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package D²PAK (TO-263) D2PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

PHD71NQ03LT,118
PHD71NQ03LT,118
NXP USA Inc.
TRANSISTOR >30MHZ
IRFB3607PBF
IRFB3607PBF
Infineon Technologies
MOSFET N-CH 75V 80A TO220AB
STD5N52U
STD5N52U
STMicroelectronics
MOSFET N-CH 525V 4.4A DPAK
FDMC86160ET100
FDMC86160ET100
onsemi
MOSFET N-CH 100V 9A/43A POWER33
STP36NF06L
STP36NF06L
STMicroelectronics
MOSFET N-CH 60V 30A TO220AB
FDMS86101A
FDMS86101A
onsemi
MOSFET N-CH 100V 13A/60A 8PQFN
IRF3710PBF
IRF3710PBF
Infineon Technologies
MOSFET N-CH 100V 57A TO220AB
IRFP4668PBF
IRFP4668PBF
Infineon Technologies
MOSFET N-CH 200V 130A TO247AC
BSS138K-7
BSS138K-7
Diodes Incorporated
MOSFET N-CH 50V SOT23 T&R 3K
STL10N65M2
STL10N65M2
STMicroelectronics
MOSFET N-CH 650V 4.5A POWERFLAT
NTMFS5H409NLT3G
NTMFS5H409NLT3G
onsemi
MOSFET N-CH 40V 41A/270A 5DFN
STS12NH3LL
STS12NH3LL
STMicroelectronics
MOSFET N-CH 30V 12A 8SO

Related Product By Brand

BAV70-ON
BAV70-ON
onsemi
RECTIFIER DIODE, 2 ELEMENT, 0.2A
MBRS140T3H
MBRS140T3H
onsemi
DIODE SCHOTTKY
MMSZ5272BT3G
MMSZ5272BT3G
onsemi
DIODE ZENER 110V 500MW SOD123
NCD9830DBR2G
NCD9830DBR2G
onsemi
IC ADC 8BIT SAR 16TSSOP
NS5B1G385DTT1G
NS5B1G385DTT1G
onsemi
IC ANLG SWITCH SPST NO 5TSOP
NCP1377DR2G
NCP1377DR2G
onsemi
IC OFFLINE SWITCH FLYBACK 8SOIC
NSV45035JZT1G
NSV45035JZT1G
onsemi
IC REG CCR 45V 35MA SOT223
MC33153DR2
MC33153DR2
onsemi
IC GATE DRVR LOW-SIDE 8SOIC
NCP3232NMNTXG
NCP3232NMNTXG
onsemi
IC REG BUCK ADJUSTABLE 15A 40QFN
NCV4276CDS50R4G
NCV4276CDS50R4G
onsemi
IC REG LINEAR 5V 400MA D2PAK-5
LM2903DR2GH
LM2903DR2GH
onsemi
FIXED POSITIVE LDO REGULATOR
MC33375D-3.0
MC33375D-3.0
onsemi
IC REG LINEAR 3V 300MA 8SOIC