FQB8P10TM
  • Share:

onsemi FQB8P10TM

Manufacturer No:
FQB8P10TM
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 100V 8A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FQB8P10TM is a standard 40V gate level power MOSFET produced by onsemi. This device is designed using onsemi's advanced technology to minimize on-state resistance and provide superior switching performance. It is particularly suited for motor driver applications and other low-voltage power management needs.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDSS) 40 V
Continuous Drain Current (ID) -6.6 A
Pulsed Drain Current (IDM) -26.4 A
Gate-Source Voltage (VGSS) ±30 V
Static Drain-Source On-Resistance (RDS(on)) 0.53 Ω @ VGS = -10 V Ω
Gate Threshold Voltage (VGS(th)) -2.0 to -4.0 V
Power Dissipation (PD) 2.5 W @ TA = 25°C W
Operating and Storage Temperature Range -55 to +150 °C

Key Features

  • Low on-state resistance (RDS(on) = 0.53 Ω @ VGS = -10 V)
  • Low gate charge (Typ. 12 nC)
  • Low Crss (Typ. 30 pF)
  • Fast switching capabilities
  • 100% avalanche tested
  • Improved dv/dt capability
  • Qualified to AEC-Q101
  • RoHS compliant

Applications

The FQB8P10TM is well-suited for various low-voltage applications, including:

  • Motor driver applications
  • Audio amplifiers
  • High efficiency switching DC/DC converters
  • DC motor control

Q & A

  1. What is the maximum drain-source voltage (VDSS) of the FQB8P10TM?

    The maximum drain-source voltage (VDSS) is 40 V.

  2. What is the continuous drain current (ID) rating of the FQB8P10TM at 25°C?

    The continuous drain current (ID) rating is -6.6 A at 25°C.

  3. What is the typical on-state resistance (RDS(on)) of the FQB8P10TM?

    The typical on-state resistance (RDS(on)) is 0.53 Ω at VGS = -10 V.

  4. Is the FQB8P10TM qualified to any automotive standards?

    Yes, it is qualified to AEC-Q101.

  5. What is the operating temperature range of the FQB8P10TM?

    The operating and storage temperature range is -55 to +150°C.

  6. What are some common applications for the FQB8P10TM?

    Common applications include motor drivers, audio amplifiers, high efficiency switching DC/DC converters, and DC motor control.

  7. Is the FQB8P10TM RoHS compliant?

    Yes, the FQB8P10TM is RoHS compliant.

  8. What is the maximum power dissipation (PD) of the FQB8P10TM at 25°C?

    The maximum power dissipation (PD) is 2.5 W at TA = 25°C.

  9. What is the gate threshold voltage (VGS(th)) range of the FQB8P10TM?

    The gate threshold voltage (VGS(th)) range is -2.0 to -4.0 V.

  10. Does the FQB8P10TM have any special testing or certifications?

    Yes, it is 100% avalanche tested and has improved dv/dt capability.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:530mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:470 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.75W (Ta), 65W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

$1.49
96

Please send RFQ , we will respond immediately.

Same Series
FQI8P10TU
FQI8P10TU
MOSFET P-CH 100V 8A I2PAK

Similar Products

Part Number FQB8P10TM FQB5P10TM
Manufacturer onsemi Fairchild Semiconductor
Product Status Last Time Buy Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc) 4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 530mOhm @ 4A, 10V 1.05Ohm @ 2.25A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V 8.2 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 470 pF @ 25 V 250 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 3.75W (Ta), 65W (Tc) 3.75W (Ta), 40W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package D²PAK (TO-263) D2PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

STB170NF04
STB170NF04
STMicroelectronics
MOSFET N-CH 40V 80A D2PAK
STL38N65M5
STL38N65M5
STMicroelectronics
MOSFET N-CH 650V PWRFLAT HV
CSD17581Q5AT
CSD17581Q5AT
Texas Instruments
MOSFET N-CH 30V 24A/123A 8VSON
STP4NK80ZFP
STP4NK80ZFP
STMicroelectronics
MOSFET N-CH 800V 3A TO220FP
STH315N10F7-6
STH315N10F7-6
STMicroelectronics
MOSFET N-CH 100V 180A H2PAK-6
BUK9635-55A,118
BUK9635-55A,118
Nexperia USA Inc.
MOSFET N-CH 55V 34A D2PAK
FQD2N60CTM
FQD2N60CTM
Fairchild Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 1
PHP9NQ20T,127
PHP9NQ20T,127
Nexperia USA Inc.
MOSFET N-CH 200V 8.7A TO220AB
BSH112,235
BSH112,235
NXP USA Inc.
MOSFET N-CH 60V 300MA TO236AB
NX3008NBKT,115
NX3008NBKT,115
NXP USA Inc.
MOSFET N-CH 30V 350MA SC75
MCH3478-TL-W
MCH3478-TL-W
onsemi
MOSFET N-CH 30V 2A 3MCPH
BSS138W-7-F-79
BSS138W-7-F-79
Diodes Incorporated
DIODE

Related Product By Brand

MMSZ5267BT1G
MMSZ5267BT1G
onsemi
DIODE ZENER 75V 500MW SOD123
1N5333BRLG
1N5333BRLG
onsemi
DIODE ZENER 3.3V 5W AXIAL
2N7002KW
2N7002KW
onsemi
MOSFET N-CH 60V 310MA SC70
FDB024N08BL7
FDB024N08BL7
onsemi
MOSFET N-CH 80V 120A TO263-7
LM301ADR2G
LM301ADR2G
onsemi
IC OPAMP GP 1 CIRCUIT 8SOIC
MC74HCT125ADR2G
MC74HCT125ADR2G
onsemi
IC BUFFER NON-INVERT 6V 14SOIC
NCP1015AP100G
NCP1015AP100G
onsemi
IC OFFLINE SWITCH FLYBACK 7DIP
NCP302045MNTWG
NCP302045MNTWG
onsemi
IC PWR DRIVER P-CHAN 2:1 31PQFN
MC34161DMR2G
MC34161DMR2G
onsemi
IC SUPERVISOR 2 CHANNEL MICRO8
FAN48610BUC33X
FAN48610BUC33X
onsemi
IC REG BOOST 3.3V 1A 9WLCSP
LM2931CTG
LM2931CTG
onsemi
IC REG LIN POS ADJ 100MA TO220-5
MC79L12ACPG
MC79L12ACPG
onsemi
IC REG LINEAR -12V 100MA TO92-3