FQB1P50TM
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onsemi FQB1P50TM

Manufacturer No:
FQB1P50TM
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 500V 1.5A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FQB1P50TM is a P-Channel power MOSFET produced by onsemi. Although this product is currently obsolete and no longer manufactured, it remains relevant for existing designs and maintenance of older systems. The MOSFET is packaged in a D2PAK-3 (TO-263-3) surface mount package, making it suitable for a variety of power management applications.

Key Specifications

ParameterValue
Package / CaseD2PAK-3 (TO-263-3)
Transistor PolarityP-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage500 V
Current Rating (Tc)1.5 A
Power Dissipation (Ta)3.13 W
Power Dissipation (Tc)63 W

Key Features

  • P-Channel MOSFET with high drain-source breakdown voltage of 500 V.
  • High current rating of 1.5 A at case temperature (Tc).
  • Surface mount D2PAK-3 (TO-263-3) package for efficient thermal management.
  • High power dissipation capabilities, with 3.13 W at ambient temperature (Ta) and 63 W at case temperature (Tc).

Applications

The FQB1P50TM is suitable for various power management and switching applications, including but not limited to:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Audio and industrial power amplifiers.
  • General-purpose switching and power management in electronic devices.

Q & A

  1. What is the package type of the FQB1P50TM MOSFET?
    The FQB1P50TM is packaged in a D2PAK-3 (TO-263-3) surface mount package.
  2. What is the transistor polarity of the FQB1P50TM?
    The FQB1P50TM is a P-Channel MOSFET.
  3. What is the drain-source breakdown voltage of the FQB1P50TM?
    The drain-source breakdown voltage is 500 V.
  4. What is the current rating of the FQB1P50TM at case temperature?
    The current rating at case temperature (Tc) is 1.5 A.
  5. Is the FQB1P50TM still in production?
    No, the FQB1P50TM is currently obsolete and no longer manufactured.
  6. Where can I find substitutes for the FQB1P50TM?
    You can find substitutes on websites such as Digi-Key, Mouser, or by consulting the manufacturer's recommendations.
  7. What are the typical applications for the FQB1P50TM?
    Typical applications include power supplies, DC-DC converters, motor control, audio and industrial power amplifiers, and general-purpose switching.
  8. What is the power dissipation capability of the FQB1P50TM at ambient temperature?
    The power dissipation capability at ambient temperature (Ta) is 3.13 W.
  9. What is the power dissipation capability of the FQB1P50TM at case temperature?
    The power dissipation capability at case temperature (Tc) is 63 W.
  10. Where can I find detailed specifications and datasheets for the FQB1P50TM?
    Detailed specifications and datasheets can be found on the onsemi website or through authorized distributors like Digi-Key and Mouser.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:1.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:10.5Ohm @ 750mA, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:14 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:350 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.13W (Ta), 63W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Same Series
FQI1P50TU
FQI1P50TU
MOSFET P-CH 500V 1.5A I2PAK

Similar Products

Part Number FQB1P50TM FQB3P50TM
Manufacturer onsemi onsemi
Product Status Last Time Buy Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 1.5A (Tc) 2.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 10.5Ohm @ 750mA, 10V 4.9Ohm @ 1.35A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 10 V 23 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 350 pF @ 25 V 660 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 3.13W (Ta), 63W (Tc) 3.13W (Ta), 85W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package D²PAK (TO-263) D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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