Overview
The FDS86242 is an N-Channel MOSFET produced by onsemi, utilizing their advanced POWERTRENCH® process. This device is optimized for low on-resistance (rDS(on)), superior switching performance, and enhanced ruggedness. It is designed to operate at high power and current levels, making it suitable for a variety of applications in power management and conversion.
Key Specifications
| Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| VDS (Drain to Source Voltage) | - | - | - | 150 | V |
| VGS (Gate to Source Voltage) | - | - | - | ±20 | V |
| ID (Drain Current) - Continuous | - | - | - | 4.1 | A |
| ID (Drain Current) - Pulsed | - | - | - | 20 | A |
| rDS(on) at VGS = 10 V, ID = 4.1 A | - | 56.3 | 67 | mΩ | |
| rDS(on) at VGS = 6 V, ID = 3.3 A | - | 73.8 | 98 | mΩ | |
| BVDSS (Drain to Source Breakdown Voltage) | ID = 250 μA, VGS = 0 V | - | - | 150 | V |
| PD (Power Dissipation) at TC = 25°C | - | - | - | 5.0 | W |
| TJ, TSTG (Operating and Storage Junction Temperature Range) | - | -55 | - | 150 | °C |
| RθJC (Thermal Resistance, Junction to Case) | - | - | - | 25 | °C/W |
| RθJA (Thermal Resistance, Junction to Ambient) | - | - | - | 50 | °C/W |
Key Features
- High performance trench technology for extremely low rDS(on)
- High power and current handling capability in a widely used SOIC-8 surface mount package
- 100% UIL Tested for reliability
- ESD Protection Level: HBM > 500 V, CDM > 2 kV
- Pb-Free, Halide Free, and RoHS Compliant
- Low on-resistance (rDS(on)) of 67 mΩ at VGS = 10 V, ID = 4.1 A and 98 mΩ at VGS = 6 V, ID = 3.3 A
- High gate to source threshold voltage (VGS(th)) of 2 to 4 V
- Low gate to source leakage current (IGSS) of ±100 nA
Applications
- DC/DC converters and Off-Line UPS
- Distributed Power Architectures and VRMs
- Primary Switch for 24 V and 48 V Systems
- High Voltage Synchronous Rectifier
Q & A
- What is the maximum drain to source voltage (VDS) of the FDS86242 MOSFET?
The maximum drain to source voltage (VDS) is 150 V.
- What is the continuous drain current (ID) rating of the FDS86242?
The continuous drain current (ID) rating is 4.1 A.
- What is the typical on-resistance (rDS(on)) at VGS = 10 V and ID = 4.1 A?
The typical on-resistance (rDS(on)) is 56.3 mΩ, with a maximum of 67 mΩ.
- Is the FDS86242 MOSFET RoHS compliant?
- What are the typical applications of the FDS86242 MOSFET?
The FDS86242 is typically used in DC/DC converters, Off-Line UPS, Distributed Power Architectures, VRMs, and as a primary switch for 24 V and 48 V systems.
- What is the thermal resistance from junction to case (RθJC) of the FDS86242?
The thermal resistance from junction to case (RθJC) is 25 °C/W.
- What is the gate to source threshold voltage (VGS(th)) range of the FDS86242?
The gate to source threshold voltage (VGS(th)) range is from 2 to 4 V.
- Does the FDS86242 have ESD protection?
- What is the operating and storage junction temperature range of the FDS86242?
The operating and storage junction temperature range is from -55°C to +150°C.
- What package type is the FDS86242 available in?
The FDS86242 is available in an SOIC-8 surface mount package.
