FDS4465_SN00187
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onsemi FDS4465_SN00187

Manufacturer No:
FDS4465_SN00187
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CHANNEL 20V 13.5A 8SO
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDS4465_SN00187, produced by onsemi, is a P-Channel 1.8V specified MOSFET that utilizes the advanced PowerTrench® process. This MOSFET is designed to be rugged and optimized for various power management applications. It features a wide range of gate drive voltage (1.8V – 8V), making it versatile for different use cases. The device is known for its high performance, fast switching speed, and high current and power handling capabilities.

Key Specifications

Parameter Value Unit
Drain-to-Source Voltage (VDSS) -20 V
Gate-to-Source Voltage (VGSS) ±8 V
Drain Current (ID) -13.5 A
Power Dissipation (PD) 2.5 W
On-State Resistance (RDS(on)) @ VGS = -4.5V 8.5
On-State Resistance (RDS(on)) @ VGS = -2.5V 10.5
On-State Resistance (RDS(on)) @ VGS = -1.8V 14
Gate Charge (Qg) 0.12 µC
Package SO8
Mounting SMD

Key Features

  • High performance trench technology for extremely low RDS(on)
  • Fast switching speed
  • High current and power handling capability
  • Rugged gate version for enhanced reliability
  • Wide range of gate drive voltage (1.8V – 8V)

Applications

  • Power Management
  • Load Switch
  • Battery Protection

Q & A

  1. What is the drain-to-source voltage rating of the FDS4465?

    The drain-to-source voltage (VDSS) rating is -20V.

  2. What is the maximum continuous drain current of the FDS4465?

    The maximum continuous drain current (ID) is -13.5A.

  3. What is the on-state resistance (RDS(on)) at VGS = -4.5V?

    The on-state resistance (RDS(on)) at VGS = -4.5V is 8.5mΩ.

  4. What are the typical applications of the FDS4465?

    The FDS4465 is typically used in power management, load switching, and battery protection applications.

  5. What is the package type of the FDS4465?

    The package type is SO8 (Small Outline 8-pin).

  6. Is the FDS4465 suitable for high current and power handling?

    Yes, the FDS4465 is designed for high current and power handling capabilities.

  7. What is the gate charge (Qg) of the FDS4465?

    The gate charge (Qg) is 0.12µC.

  8. What is the thermal resistance, junction-to-ambient (RθJA), of the FDS4465?

    The thermal resistance, junction-to-ambient (RθJA), is 125°C/W.

  9. Is the FDS4465 RoHS compliant?

    Yes, the FDS4465 is RoHS compliant.

  10. What is the operating and storage junction temperature range of the FDS4465?

    The operating and storage junction temperature range is -55°C to +150°C.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:13.5A
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:8.5mOhm @ 13.5A, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:120 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:8237 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):1.2W
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SO
Package / Case:8-SOIC (0.154", 3.90mm Width)
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