Overview
The FDP51N25 is a high-voltage N-Channel MOSFET from onsemi, part of their UniFET MOSFET family. This device is designed using planar stripe and DMOS technology to reduce on-state resistance and enhance switching performance. It also boasts higher avalanche energy strength, making it suitable for various high-power applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDSS) | 250 | V |
| Continuous Drain Current (ID) | 51 (at TC = 25°C), 30 (at TC = 100°C) | A |
| Pulsed Drain Current (IDM) | 204 | A |
| Gate-Source Voltage (VGSS) | ±30 | V |
| On-State Resistance (RDS(on)) | 48 mΩ (Typ.) @ VGS = 10 V, ID = 25.5 A | mΩ |
| Gate Threshold Voltage (VGS(th)) | 3.0 - 5.0 | V |
| Total Gate Charge (Qg) | 55 - 70 nC | nC |
| Thermal Resistance, Junction-to-Case (RθJC) | 0.39 °C/W | °C/W |
| Thermal Resistance, Junction-to-Ambient (RθJA) | 62.5 °C/W | °C/W |
| Power Dissipation (PD) | 320 W (at TC = 25°C) | W |
| Operating and Storage Temperature Range | -55 to +150 °C | °C |
Key Features
- Low on-state resistance (RDS(on) = 48 mΩ Typ. @ VGS = 10 V, ID = 25.5 A)
- Low gate charge (Typ. 55 nC)
- Low Crss (Typ. 63 pF)
- High avalanche energy strength
- Enhanced switching performance
- High thermal stability and reliability
Applications
- Power factor correction (PFC)
- Flat panel display (FPD) TV power
- ATX power supplies
- Electronic lamp ballasts
- Uninterruptible Power Supply (UPS)
- AC-DC power supplies
- Lighting systems
Q & A
- What is the maximum drain-source voltage (VDSS) of the FDP51N25 MOSFET?
The maximum drain-source voltage (VDSS) is 250 V.
- What is the continuous drain current (ID) rating at 25°C and 100°C?
The continuous drain current (ID) is 51 A at 25°C and 30 A at 100°C.
- What is the typical on-state resistance (RDS(on)) of the FDP51N25?
The typical on-state resistance (RDS(on)) is 48 mΩ at VGS = 10 V, ID = 25.5 A.
- What are the key applications of the FDP51N25 MOSFET?
The FDP51N25 is suitable for applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX power supplies, electronic lamp ballasts, UPS, AC-DC power supplies, and lighting systems.
- What is the thermal resistance, junction-to-case (RθJC), of the FDP51N25?
The thermal resistance, junction-to-case (RθJC), is 0.39 °C/W.
- What is the maximum power dissipation (PD) at 25°C?
The maximum power dissipation (PD) at 25°C is 320 W.
- What is the operating and storage temperature range for the FDP51N25?
The operating and storage temperature range is -55 to +150 °C.
- What is the typical gate charge (Qg) of the FDP51N25?
The typical gate charge (Qg) is 55 - 70 nC.
- What are the package options available for the FDP51N25?
The FDP51N25 is available in TO-220-3LD, TO-220 Fullpack, and TO-220F-3SG packages.
- What is the maximum lead temperature for soldering?
The maximum lead temperature for soldering is 300 °C for 5 seconds.
