FDN5632N-F085
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onsemi FDN5632N-F085

Manufacturer No:
FDN5632N-F085
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 1.7A SUPERSOT3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDN5632N-F085 is an N-Channel Logic Level PowerTrench MOSFET manufactured by onsemi. This device is designed for high-frequency switching applications, particularly in automotive and other high-performance environments. It features a compact SOT-23/SUPERSOT-23 package, making it suitable for space-constrained designs while maintaining high electrical performance.

Key Specifications

ParameterValue
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage60 V
Id - Continuous Drain Current1.6 A
Package TypeSOT-23/SUPERSOT-23, 3 Lead
Power Dissipation (Ta)1.1 W
Operating Temperature Range-55°C to 150°C

Key Features

  • High-frequency switching capability
  • Logic Level Gate Drive
  • Low On-Resistance (Rds(on))
  • Compact SOT-23/SUPERSOT-23 package
  • Pb-Free and Halide-Free
  • High current handling up to 1.6 A

Applications

The FDN5632N-F085 is ideal for various high-frequency switching applications, including:

  • Automotive systems
  • Power management circuits
  • DC-DC converters
  • Motor control circuits
  • General-purpose switching applications

Q & A

  1. What is the drain-source breakdown voltage of the FDN5632N-F085?
    The drain-source breakdown voltage is 60 V.
  2. What is the continuous drain current rating of the FDN5632N-F085?
    The continuous drain current rating is 1.6 A.
  3. What package type is the FDN5632N-F085 available in?
    The FDN5632N-F085 is available in a SOT-23/SUPERSOT-23 package.
  4. Is the FDN5632N-F085 Pb-Free and Halide-Free?
    Yes, the FDN5632N-F085 is Pb-Free and Halide-Free.
  5. What are the typical applications for the FDN5632N-F085?
    The FDN5632N-F085 is typically used in automotive systems, power management circuits, DC-DC converters, motor control circuits, and general-purpose switching applications.
  6. What is the operating temperature range of the FDN5632N-F085?
    The operating temperature range is -55°C to 150°C.
  7. What is the power dissipation rating of the FDN5632N-F085 at ambient temperature?
    The power dissipation rating is 1.1 W.
  8. Is the FDN5632N-F085 suitable for high-frequency switching applications?
    Yes, the FDN5632N-F085 is designed for high-frequency switching applications.
  9. What is the transistor polarity of the FDN5632N-F085?
    The transistor polarity is N-Channel.
  10. Where can I find detailed specifications for the FDN5632N-F085?
    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like DigiKey and Mouser Electronics.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:1.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:82mOhm @ 1.7A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:12 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:475 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):1.1W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
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