FDMS86105
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onsemi FDMS86105

Manufacturer No:
FDMS86105
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 6A/26A 8PQFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDMS86105 is an N-Channel MOSFET produced by onsemi, utilizing their advanced Power Trench® process. This technology is designed to minimize on-state resistance while maintaining superior switching performance. The device is housed in an 8-PQFN (5x6) surface mount package, making it suitable for a variety of high-efficiency applications.

Key Specifications

Parameter Value Unit
Drain to Source Voltage (VDS) 100 V
Gate to Source Voltage (VGS) ±20 V
Continuous Drain Current (ID) at TA = 25°C 6 A
Continuous Drain Current (ID) at TC = 25°C 26 A
Power Dissipation at TA = 25°C 2.5 W
Power Dissipation at TC = 25°C 48 W
On-State Resistance (RDS(on)) at VGS = 10 V, ID = 13 A 8 mΩ (typical)
On-State Resistance (RDS(on)) at VGS = 6 V, ID = 9.5 A 13.5 mΩ (typical)
Operating and Storage Junction Temperature Range -55 to +150 °C
Thermal Resistance, Junction to Case (RθJC) 1.2 °C/W
Thermal Resistance, Junction to Ambient (RθJA) 50 °C/W

Key Features

  • Advanced Power Trench® process for low on-state resistance and high efficiency.
  • Low RDS(on) of 8 mΩ at VGS = 10 V, ID = 13 A.
  • Robust MSL1 package design.
  • 100% UIL tested and 100% Rg tested.
  • Pb-free and RoHS compliant.
  • High switching performance with low turn-on and turn-off delay times.

Applications

  • DC-DC conversion.
  • High-efficiency power management systems.
  • Switching power supplies.
  • Motor control and drive systems.

Q & A

  1. What is the maximum drain to source voltage (VDS) of the FDMS86105?

    The maximum drain to source voltage (VDS) is 100 V.

  2. What is the typical on-state resistance (RDS(on)) at VGS = 10 V and ID = 13 A?

    The typical on-state resistance (RDS(on)) is 8 mΩ.

  3. What is the continuous drain current (ID) at TA = 25°C?

    The continuous drain current (ID) at TA = 25°C is 6 A.

  4. What is the power dissipation at TA = 25°C?

    The power dissipation at TA = 25°C is 2.5 W.

  5. Is the FDMS86105 Pb-free and RoHS compliant?

    Yes, the FDMS86105 is Pb-free and RoHS compliant.

  6. What is the operating and storage junction temperature range?

    The operating and storage junction temperature range is -55 to +150 °C.

  7. What is the thermal resistance, junction to case (RθJC)?

    The thermal resistance, junction to case (RθJC), is 1.2 °C/W.

  8. What are some typical applications of the FDMS86105?

    Typical applications include DC-DC conversion, high-efficiency power management systems, switching power supplies, and motor control and drive systems.

  9. What package type is the FDMS86105 available in?

    The FDMS86105 is available in an 8-PQFN (5x6) surface mount package.

  10. Does the FDMS86105 undergo any specific testing?

    Yes, the FDMS86105 undergoes 100% UIL testing and 100% Rg testing.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:6A (Ta), 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:34mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:11 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:645 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 48W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-PQFN (5x6)
Package / Case:8-PowerTDFN
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