FDMS86101
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onsemi FDMS86101

Manufacturer No:
FDMS86101
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 12.4A/60A 8PQFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDMS86101 is an N-Channel MOSFET produced by onsemi, utilizing their advanced POWERTRENCH® process. This technology is designed to minimize on-state resistance while maintaining superior switching performance. The device is housed in a robust Power56 package, ensuring high efficiency and reliability. It is RoHS compliant and has undergone rigorous testing, including 100% UIL and Rg testing, to ensure its quality and performance.

Key Specifications

Parameter Value Unit
VDS (Drain to Source Voltage) 100 V
VGS (Gate to Source Voltage) ±20 V
ID (Continuous Drain Current at TC = 25°C) 60 A
ID (Continuous Drain Current at TA = 25°C) 12.4 A
ID (Pulsed Drain Current) 200 A
RDS(on) (On-State Resistance at VGS = 10 V, ID = 13 A) 8
RDS(on) (On-State Resistance at VGS = 6 V, ID = 9.5 A) 13.5
PD (Power Dissipation at TC = 25°C) 104 W
PD (Power Dissipation at TA = 25°C) 2.5 W
TJ, TSTG (Operating and Storage Junction Temperature Range) -55 to +150 °C
RθJC (Thermal Resistance, Junction to Case) 1.2 °C/W
RθJA (Thermal Resistance, Junction to Ambient) 50 °C/W

Key Features

  • Advanced POWERTRENCH® process for low on-state resistance and high efficiency.
  • Robust Power56 package design with MSL1 rating.
  • 100% UIL and Rg tested for reliability.
  • RoHS compliant.
  • High performance with superior switching characteristics.
  • Low thermal resistance, especially when mounted on a copper pad.

Applications

The FDMS86101 is particularly suited for DC-DC conversion applications due to its low on-state resistance and high efficiency. Its robust design and superior switching performance make it an ideal choice for high-power electronic systems.

Q & A

  1. What is the maximum drain to source voltage (VDS) of the FDMS86101?

    The maximum drain to source voltage (VDS) is 100 V.

  2. What is the continuous drain current (ID) at TC = 25°C?

    The continuous drain current (ID) at TC = 25°C is 60 A.

  3. What is the on-state resistance (RDS(on)) at VGS = 10 V and ID = 13 A?

    The on-state resistance (RDS(on)) at VGS = 10 V and ID = 13 A is 8 mΩ.

  4. Is the FDMS86101 RoHS compliant?

    Yes, the FDMS86101 is RoHS compliant.

  5. What is the thermal resistance (RθJC) from junction to case?

    The thermal resistance (RθJC) from junction to case is 1.2 °C/W.

  6. What are the typical applications of the FDMS86101?

    The FDMS86101 is typically used in DC-DC conversion applications.

  7. What is the maximum power dissipation (PD) at TC = 25°C?

    The maximum power dissipation (PD) at TC = 25°C is 104 W.

  8. What is the operating and storage junction temperature range (TJ, TSTG)?

    The operating and storage junction temperature range (TJ, TSTG) is -55 to +150 °C.

  9. Has the FDMS86101 undergone any specific testing?

    Yes, the FDMS86101 has undergone 100% UIL and Rg testing.

  10. What package type is used for the FDMS86101?

    The FDMS86101 is housed in a Power56 package.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:12.4A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:8mOhm @ 13A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:55 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3000 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 104W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-PQFN (5x6)
Package / Case:8-PowerTDFN
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