FDMS8460
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onsemi FDMS8460

Manufacturer No:
FDMS8460
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 25A/49A 8PQFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDMS8460 is a high-performance N-Channel MOSFET produced by onsemi. This device is part of the POWERTRENCH® family, known for its advanced trench technology that enhances power density and efficiency. The FDMS8460 is designed to operate at a drain-source breakdown voltage of 40 V and can handle continuous drain currents of up to 25 A at ambient temperature and 49 A at case temperature. It is packaged in an 8-PQFN (5x6) surface mount configuration, making it suitable for a variety of power management applications.

Key Specifications

ParameterValue
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage40 V
Id - Continuous Drain Current (Ta)25 A
Id - Continuous Drain Current (Tc)49 A
Rds On - Drain-Source Resistance2.5 mΩ (typical)
Package Type8-PQFN (5x6) Surface Mount
Power Dissipation (Ta)2.5 W
Power Dissipation (Tc)104 W

Key Features

  • High current handling capability with continuous drain currents up to 25 A at ambient temperature and 49 A at case temperature.
  • Low on-resistance (Rds On) of 2.5 mΩ (typical), reducing power losses and improving efficiency.
  • Advanced POWERTRENCH® technology for enhanced power density and thermal performance.
  • Compact 8-PQFN (5x6) surface mount package for space-efficient designs.
  • High drain-source breakdown voltage of 40 V, ensuring robust operation in various power management applications.

Applications

The FDMS8460 is suitable for a wide range of power management applications, including but not limited to:

  • DC-DC converters and power supplies.
  • Motor control and drive systems.
  • Power amplifiers and audio systems.
  • Automotive and industrial power systems.
  • Server and data center power management.

Q & A

  1. What is the drain-source breakdown voltage of the FDMS8460?
    The drain-source breakdown voltage of the FDMS8460 is 40 V.
  2. What is the continuous drain current rating of the FDMS8460 at ambient temperature?
    The continuous drain current rating at ambient temperature is 25 A.
  3. What is the continuous drain current rating of the FDMS8460 at case temperature?
    The continuous drain current rating at case temperature is 49 A.
  4. What is the typical on-resistance (Rds On) of the FDMS8460?
    The typical on-resistance (Rds On) is 2.5 mΩ.
  5. What package type is the FDMS8460 available in?
    The FDMS8460 is available in an 8-PQFN (5x6) surface mount package.
  6. What are some common applications for the FDMS8460?
    The FDMS8460 is commonly used in DC-DC converters, motor control systems, power amplifiers, automotive and industrial power systems, and server and data center power management.
  7. What technology does the FDMS8460 use?
    The FDMS8460 uses advanced POWERTRENCH® technology.
  8. How much power can the FDMS8460 dissipate at ambient temperature?
    The FDMS8460 can dissipate up to 2.5 W at ambient temperature.
  9. How much power can the FDMS8460 dissipate at case temperature?
    The FDMS8460 can dissipate up to 104 W at case temperature.
  10. Where can I find detailed specifications for the FDMS8460?
    Detailed specifications can be found on the official onsemi website, as well as on distributor sites like Digi-Key and Mouser Electronics.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:25A (Ta), 49A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:2.2mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:110 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:7205 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 104W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-PQFN (5x6)
Package / Case:8-PowerTDFN
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