Overview
The FDMS4D0N12C is a high-performance, single N-Channel PowerTrench® MOSFET produced by onsemi. This device is designed for low to medium voltage applications and features a compact PQFN8 package. It is known for its high current handling capability, low on-resistance, and robust thermal performance, making it suitable for a variety of power management and switching applications.
Key Specifications
| Parameter | Value |
|---|---|
| Voltage Rating (Vds) | 120 V |
| Continuous Drain Current (Id) | 118 A |
| Maximum Drain Current (Idm) | 628 A |
| On-Resistance (Rds(on)) | 4.0 mΩ |
| Package Type | PQFN8 (5 x 6 mm) |
| Power Dissipation (Pd) | 106 W |
| Gate Threshold Voltage (Vgs(th)) | 2.0 - 4.0 V |
Key Features
- High current handling capability up to 118 A continuous and 628 A maximum.
- Low on-resistance of 4.0 mΩ, reducing power losses.
- Compact PQFN8 package (5 x 6 mm) for space-efficient designs.
- Shielded Gate technology for improved switching performance and reduced gate charge.
- High power dissipation of 106 W, suitable for demanding applications.
Applications
- Power supplies and DC-DC converters.
- Motor control and drive systems.
- Automotive systems, including electric vehicles and hybrid vehicles.
- Industrial power systems and control circuits.
- Renewable energy systems, such as solar and wind power inverters.
Q & A
- What is the voltage rating of the FDMS4D0N12C MOSFET?
The voltage rating (Vds) of the FDMS4D0N12C is 120 V. - What is the maximum continuous drain current of the FDMS4D0N12C?
The maximum continuous drain current (Id) is 118 A. - What is the on-resistance of the FDMS4D0N12C?
The on-resistance (Rds(on)) is 4.0 mΩ. - What package type does the FDMS4D0N12C come in?
The FDMS4D0N12C comes in a PQFN8 package (5 x 6 mm). - What are some common applications for the FDMS4D0N12C?
Common applications include power supplies, motor control systems, automotive systems, industrial power systems, and renewable energy systems. - What is the maximum power dissipation of the FDMS4D0N12C?
The maximum power dissipation (Pd) is 106 W. - What is the gate threshold voltage range of the FDMS4D0N12C?
The gate threshold voltage (Vgs(th)) range is 2.0 - 4.0 V. - Is the FDMS4D0N12C suitable for high-frequency switching applications?
Yes, the FDMS4D0N12C is suitable for high-frequency switching applications due to its low on-resistance and shielded gate technology. - Where can I find detailed specifications for the FDMS4D0N12C?
Detailed specifications can be found in the datasheet available on onsemi's official website and other electronic component distributors like RS Components and TME. - What is the significance of the Shielded Gate technology in the FDMS4D0N12C?
The Shielded Gate technology improves switching performance by reducing gate charge and enhancing overall efficiency.
