FDMC86259P
  • Share:

onsemi FDMC86259P

Manufacturer No:
FDMC86259P
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 150V 3.2A/13A PWR33
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDMC86259P is a P-Channel PowerTrench® MOSFET manufactured by onsemi. This device is produced using onsemi’s advanced PowerTrench process, which is designed to minimize on-state resistance while maintaining superior switching performance. The FDMC86259P is optimized for fast switching applications and load switch applications, making it ideal for a wide range of power management needs in industrial and automotive sectors.

Key Specifications

Parameter Value Unit
FET Type P-Channel
Drain to Source Voltage (Vdss) 150 V
Continuous Drain Current (Id) @ 25°C 3.2A (Ta), 13A (Tc) A
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V V
Rds On (Max) @ Id, Vgs 107mΩ @ 3A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA V
Vgs (Max) ±25V V
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V nC
Input Capacitance (Ciss) (Max) @ Vds 2045 pF @ 75 V pF
Power Dissipation (Max) 2.3W (Ta), 62W (Tc) W
Operating Temperature -55°C ~ 150°C (TJ) °C
Mounting Type Surface Mount
Package / Case Power-33-8

Key Features

  • Low RDS(on): The FDMC86259P features a maximum RDS(on) of 107 mΩ at VGS = -10 V, ID = -3 A, and 137 mΩ at VGS = -6 V, ID = -2.7 A, reducing power dissipation and improving switching efficiency.
  • Fast Switching Applications: Optimized for fast switching and load switch applications, making it suitable for high-speed switching and load handling.
  • Low Qg: Designed with low gate charge (Qg) for efficient energy conversion.
  • RoHS & UL Compliant: Ensures safe use in various industries by meeting the requirements of the Restriction of Hazardous Substances (RoHS) directive and UL standards.
  • High Current Handling: Capable of handling currents up to -13 A, making it suitable for demanding applications.
  • Compact Size: The Power-33-8 package minimizes board space requirements.
  • 100% UIL Tested: Thoroughly tested for reliability and performance.

Applications

  • Active Clamp Switch: Suitable for active clamp switching applications due to its fast switching capabilities.
  • Load Switch: Ideal for load switching applications that require efficient power management.
  • Fast Charging Applications: Suitable for devices requiring quick charging capabilities.
  • Industrial and Automotive Applications: Versatile enough to be used in various industrial and automotive projects where efficiency and reliability are crucial.

Q & A

  1. Q: What is the maximum drain to source voltage (Vdss) of the FDMC86259P?
    A: The maximum drain to source voltage (Vdss) is 150 V.
  2. Q: What are the continuous drain current ratings for the FDMC86259P?
    A: The continuous drain current ratings are 3.2 A (Ta) and 13 A (Tc).
  3. Q: Is the FDMC86259P RoHS compliant?
    A: Yes, the FDMC86259P is RoHS compliant.
  4. Q: What are the advantages of using the FDMC86259P in load switching applications?
    A: The FDMC86259P offers low RDS(on), making it suitable for efficient power management in load switching applications.
  5. Q: Can the FDMC86259P be used in fast switching applications?
    A: Yes, the FDMC86259P is optimized for fast switching applications.
  6. Q: What is the maximum operating temperature for the FDMC86259P?
    A: The maximum operating temperature is 150°C (TJ).
  7. Q: What is the package type of the FDMC86259P?
    A: The package type is Power-33-8.
  8. Q: What is the gate charge (Qg) of the FDMC86259P?
    A: The gate charge (Qg) is 32 nC at Vgs = 10 V.
  9. Q: Is the FDMC86259P suitable for high current applications?
    A: Yes, it can handle currents up to -13 A.
  10. Q: What are the benefits of the low RDS(on) in the FDMC86259P?
    A: The low RDS(on) reduces power dissipation and improves switching efficiency.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:3.2A (Ta), 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:107mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:32 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:2045 pF @ 75 V
FET Feature:- 
Power Dissipation (Max):2.3W (Ta), 62W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:Power33
Package / Case:8-PowerWDFN
0 Remaining View Similar

In Stock

$3.00
207

Please send RFQ , we will respond immediately.

Related Product By Categories

BUK98180-100A/CUX
BUK98180-100A/CUX
Nexperia USA Inc.
MOSFET N-CH 100V 4.6A SOT223
FDD86567-F085
FDD86567-F085
onsemi
MOSFET N-CH 60V 100A DPAK
STV270N4F3
STV270N4F3
STMicroelectronics
MOSFET N-CH 40V 270A 10POWERSO
STF3NK100Z
STF3NK100Z
STMicroelectronics
MOSFET N-CH 1000V 2.5A TO220FP
BSN20BK215
BSN20BK215
Nexperia USA Inc.
SMALL SIGNAL N-CHANNEL MOSFET
PMV50XP215
PMV50XP215
NXP USA Inc.
P-CHANNEL MOSFET
FDMS86163P-23507X
FDMS86163P-23507X
onsemi
FET -100V 22.0 MOHM PQFN56
STW48NM60N
STW48NM60N
STMicroelectronics
MOSFET N-CH 600V 44A TO247
STW15NB50
STW15NB50
STMicroelectronics
MOSFET N-CH 500V 14.6A TO247-3
STD85N3LH5
STD85N3LH5
STMicroelectronics
MOSFET N-CH 30V 80A DPAK
NTMFS4834NT1G
NTMFS4834NT1G
onsemi
MOSFET N-CH 30V 13A/130A 5DFN
STD7N52DK3
STD7N52DK3
STMicroelectronics
MOSFET N-CH 525V 6A DPAK

Related Product By Brand

SZESD7461N2T5G
SZESD7461N2T5G
onsemi
TVS DIODE 16VWM 39VC 2XDFN
MBRS140T3H
MBRS140T3H
onsemi
DIODE SCHOTTKY
1N5333BRLG
1N5333BRLG
onsemi
DIODE ZENER 3.3V 5W AXIAL
SZMMSZ4V7T1G
SZMMSZ4V7T1G
onsemi
DIODE ZENER 4.7V 500MW SOD123
BMS3004-1EX
BMS3004-1EX
onsemi
MOSFET P-CH TO220-3
FDWS9508L_F085
FDWS9508L_F085
onsemi
MOSFET P-CH 40V 80A 8PQFN
MC74HC138ADT
MC74HC138ADT
onsemi
DECODER/DRIVER, HC/UH SERIES
NCP705MTADJTCG
NCP705MTADJTCG
onsemi
IC REG LIN POS ADJ 500MA 6WDFN
MC78M05BDTT5G
MC78M05BDTT5G
onsemi
IC REG LINEAR 5V 500MA DPAK
NCP163AFCT280T2G
NCP163AFCT280T2G
onsemi
IC REG LINEAR 2.8V 250MA 4WLCSP
FOD817B3SD
FOD817B3SD
onsemi
OPTOISOLATOR 5KV TRANSISTOR 4SMD
FOD817A3SD
FOD817A3SD
onsemi
OPTOISOLATOR 5KV TRANSISTOR 4SMD