FDMC86259P
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onsemi FDMC86259P

Manufacturer No:
FDMC86259P
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 150V 3.2A/13A PWR33
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDMC86259P is a P-Channel PowerTrench® MOSFET manufactured by onsemi. This device is produced using onsemi’s advanced PowerTrench process, which is designed to minimize on-state resistance while maintaining superior switching performance. The FDMC86259P is optimized for fast switching applications and load switch applications, making it ideal for a wide range of power management needs in industrial and automotive sectors.

Key Specifications

Parameter Value Unit
FET Type P-Channel
Drain to Source Voltage (Vdss) 150 V
Continuous Drain Current (Id) @ 25°C 3.2A (Ta), 13A (Tc) A
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V V
Rds On (Max) @ Id, Vgs 107mΩ @ 3A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA V
Vgs (Max) ±25V V
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V nC
Input Capacitance (Ciss) (Max) @ Vds 2045 pF @ 75 V pF
Power Dissipation (Max) 2.3W (Ta), 62W (Tc) W
Operating Temperature -55°C ~ 150°C (TJ) °C
Mounting Type Surface Mount
Package / Case Power-33-8

Key Features

  • Low RDS(on): The FDMC86259P features a maximum RDS(on) of 107 mΩ at VGS = -10 V, ID = -3 A, and 137 mΩ at VGS = -6 V, ID = -2.7 A, reducing power dissipation and improving switching efficiency.
  • Fast Switching Applications: Optimized for fast switching and load switch applications, making it suitable for high-speed switching and load handling.
  • Low Qg: Designed with low gate charge (Qg) for efficient energy conversion.
  • RoHS & UL Compliant: Ensures safe use in various industries by meeting the requirements of the Restriction of Hazardous Substances (RoHS) directive and UL standards.
  • High Current Handling: Capable of handling currents up to -13 A, making it suitable for demanding applications.
  • Compact Size: The Power-33-8 package minimizes board space requirements.
  • 100% UIL Tested: Thoroughly tested for reliability and performance.

Applications

  • Active Clamp Switch: Suitable for active clamp switching applications due to its fast switching capabilities.
  • Load Switch: Ideal for load switching applications that require efficient power management.
  • Fast Charging Applications: Suitable for devices requiring quick charging capabilities.
  • Industrial and Automotive Applications: Versatile enough to be used in various industrial and automotive projects where efficiency and reliability are crucial.

Q & A

  1. Q: What is the maximum drain to source voltage (Vdss) of the FDMC86259P?
    A: The maximum drain to source voltage (Vdss) is 150 V.
  2. Q: What are the continuous drain current ratings for the FDMC86259P?
    A: The continuous drain current ratings are 3.2 A (Ta) and 13 A (Tc).
  3. Q: Is the FDMC86259P RoHS compliant?
    A: Yes, the FDMC86259P is RoHS compliant.
  4. Q: What are the advantages of using the FDMC86259P in load switching applications?
    A: The FDMC86259P offers low RDS(on), making it suitable for efficient power management in load switching applications.
  5. Q: Can the FDMC86259P be used in fast switching applications?
    A: Yes, the FDMC86259P is optimized for fast switching applications.
  6. Q: What is the maximum operating temperature for the FDMC86259P?
    A: The maximum operating temperature is 150°C (TJ).
  7. Q: What is the package type of the FDMC86259P?
    A: The package type is Power-33-8.
  8. Q: What is the gate charge (Qg) of the FDMC86259P?
    A: The gate charge (Qg) is 32 nC at Vgs = 10 V.
  9. Q: Is the FDMC86259P suitable for high current applications?
    A: Yes, it can handle currents up to -13 A.
  10. Q: What are the benefits of the low RDS(on) in the FDMC86259P?
    A: The low RDS(on) reduces power dissipation and improves switching efficiency.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:3.2A (Ta), 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:107mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:32 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:2045 pF @ 75 V
FET Feature:- 
Power Dissipation (Max):2.3W (Ta), 62W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:Power33
Package / Case:8-PowerWDFN
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