Overview
The FDMC86244 is an N-Channel Shielded Gate PowerTrench® MOSFET produced by onsemi. This device is fabricated using onsemi's advanced PowerTrench process, which incorporates Shielded Gate technology. This technology is optimized for low on-state resistance while maintaining superior switching performance. The FDMC86244 is designed for high-efficiency power management applications, offering a low profile and robust thermal characteristics.
Key Specifications
| Parameter | Test Conditions | Min | Max | Unit | |
|---|---|---|---|---|---|
| VDS (Drain to Source Voltage) | - | - | - | 150 | V |
| VGS (Gate to Source Voltage) | - | - | - | ±20 | V |
| ID (Drain Current) - Continuous | TC = 25°C | - | - | 9.4 | A |
| ID (Drain Current) - Continuous | TA = 25°C | - | - | 2.8 | A |
| ID (Drain Current) - Pulsed | - | - | - | 12 | A |
| EAS (Single Pulse Avalanche Energy) | Note 1 | - | - | 12 | mJ |
| PD (Power Dissipation) - TC = 25°C | - | - | - | 26 | W |
| PD (Power Dissipation) - TA = 25°C | Note 2a | - | - | 2.3 | W |
| TJ, TSTG (Operating and Storage Junction Temperature Range) | - | -55 | - | 150 | °C |
| rDS(on) (Static Drain to Source On Resistance) at VGS = 10 V, ID = 2.8 A | - | - | 105 | 134 | mΩ |
| rDS(on) (Static Drain to Source On Resistance) at VGS = 6 V, ID = 2.4 A | - | - | 120 | 186 | mΩ |
Key Features
- Shielded Gate MOSFET Technology using onsemi's advanced PowerTrench process
- Low on-state resistance: Max rDS(on) = 134 mΩ at VGS = 10 V, ID = 2.8 A and Max rDS(on) = 186 mΩ at VGS = 6 V, ID = 2.4 A
- Low Profile: 1 mm max in Power 33 package
- 100% UIL Tested
- Pb-Free and RoHS Compliant
Applications
- DC-DC Conversion
Q & A
- What is the maximum drain to source voltage (VDS) of the FDMC86244 MOSFET?
The maximum drain to source voltage (VDS) is 150 V.
- What is the maximum continuous drain current (ID) at TC = 25°C?
The maximum continuous drain current (ID) at TC = 25°C is 9.4 A.
- What is the typical on-state resistance (rDS(on)) at VGS = 10 V and ID = 2.8 A?
The typical on-state resistance (rDS(on)) at VGS = 10 V and ID = 2.8 A is 105 mΩ.
- Is the FDMC86244 MOSFET RoHS compliant?
Yes, the FDMC86244 MOSFET is Pb-Free and RoHS compliant.
- What is the operating and storage junction temperature range for the FDMC86244?
The operating and storage junction temperature range is -55°C to +150°C.
- What is the maximum single pulse avalanche energy (EAS) for the FDMC86244?
The maximum single pulse avalanche energy (EAS) is 12 mJ.
- What is the typical gate to source threshold voltage (VGS(th))?
The typical gate to source threshold voltage (VGS(th)) is 2.6 V.
- What is the thermal resistance from junction to ambient (RθJA) for the FDMC86244?
The thermal resistance from junction to ambient (RθJA) is 125°C/W.
- What package type is the FDMC86244 available in?
The FDMC86244 is available in the WDFN8 3.3x3.3, 0.65P package.
- What are the typical applications for the FDMC86244 MOSFET?
The FDMC86244 is typically used in DC-DC conversion applications.
