Overview
The FDMC86248 is an N-Channel MOSFET produced by onsemi, utilizing their advanced POWERTRENCH process. This technology is designed to minimize on-state resistance while maintaining superior switching performance. The MOSFET is packaged in a PQFN8 (3.3x3.3, 0.65P) case, which is Pb-free, halide-free, and RoHS compliant. It is suitable for high-efficiency applications requiring low on-state resistance and robust thermal performance.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| VDS (Drain to Source Voltage) | 150 | V |
| VGS (Gate to Source Voltage) | ±20 | V |
| ID (Drain Current) - Continuous (TC = 25°C) | 13 | A |
| ID (Drain Current) - Continuous (TA = 25°C) | 3.4 | A |
| ID (Drain Current) - Pulsed | 15 | A |
| EAS (Single Pulse Avalanche Energy) | 37 | mJ |
| PD (Power Dissipation) - TC = 25°C | 36 | W |
| PD (Power Dissipation) - TA = 25°C | 2.3 | W |
| TJ, TSTG (Operating and Storage Junction Temperature Range) | -55 to +150 | °C |
| RθJC (Thermal Resistance, Junction to Case) | 3.4 | °C/W |
| RθJA (Thermal Resistance, Junction to Ambient) | 53 | °C/W |
| RDS(on) (Static Drain to Source On Resistance) at VGS = 10 V, ID = 3.4 A | 90 | mΩ |
| RDS(on) (Static Drain to Source On Resistance) at VGS = 6 V, ID = 2.9 A | 125 | mΩ |
Key Features
- Advanced POWERTRENCH process for low RDS(on) and high efficiency
- Maximum RDS(on) of 90 mΩ at VGS = 10 V, ID = 3.4 A and 125 mΩ at VGS = 6 V, ID = 2.9 A
- 100% UIL tested
- Pb-free, halide-free, and RoHS compliant
- High thermal performance with RθJC of 3.4 °C/W and RθJA of 53 °C/W
Applications
- Primary MOSFET
- MV synchronous rectifier
Q & A
- What is the maximum drain to source voltage (VDS) of the FDMC86248 MOSFET?
The maximum drain to source voltage (VDS) is 150 V.
- What is the maximum continuous drain current (ID) at TC = 25°C?
The maximum continuous drain current (ID) at TC = 25°C is 13 A.
- What is the thermal resistance from junction to case (RθJC) and junction to ambient (RθJA)?
The thermal resistance from junction to case (RθJC) is 3.4 °C/W, and from junction to ambient (RθJA) is 53 °C/W.
- Is the FDMC86248 MOSFET RoHS compliant?
- What are the typical applications of the FDMC86248 MOSFET?
The FDMC86248 MOSFET is typically used as a primary MOSFET and in MV synchronous rectifier applications.
- What is the maximum gate to source voltage (VGS)?
The maximum gate to source voltage (VGS) is ±20 V.
- What is the single pulse avalanche energy (EAS) of the FDMC86248 MOSFET?
The single pulse avalanche energy (EAS) is 37 mJ.
- What is the package type of the FDMC86248 MOSFET?
The FDMC86248 MOSFET is packaged in a PQFN8 (3.3x3.3, 0.65P) case.
- What is the maximum power dissipation (PD) at TA = 25°C?
The maximum power dissipation (PD) at TA = 25°C is 2.3 W.
- What is the operating and storage junction temperature range (TJ, TSTG)?
The operating and storage junction temperature range (TJ, TSTG) is -55 to +150 °C.
