FDMC8622
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onsemi FDMC8622

Manufacturer No:
FDMC8622
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 4A/16A 8MLP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDMC8622 is an N-Channel MOSFET produced by onsemi, utilizing advanced Power Trench® technology with Shielded Gate architecture. This design optimization enhances the device's performance, particularly in low to medium voltage applications. The FDMC8622 is engineered to provide high efficiency, low on-resistance, and excellent thermal performance, making it suitable for a variety of power management and switching applications.

Key Specifications

Parameter Ratings Unit
VDS (Drain to Source Voltage) 100 V
VGS (Gate to Source Voltage) ±20 V
ID (Drain Current) Continuous at TC = 25°C See datasheet for specific values A

Key Features

  • Advanced Power Trench® process with Shielded Gate technology for improved performance and reduced gate charge.
  • Low on-resistance (Rds(on)) for high efficiency in power switching applications.
  • Excellent thermal performance, enhancing reliability and lifespan.
  • High current handling capability, suitable for demanding power management tasks.

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Switching regulators and power amplifiers.
  • Automotive and industrial power management systems.

Q & A

  1. What is the maximum drain to source voltage (VDS) of the FDMC8622?

    The maximum drain to source voltage (VDS) is 100 V.

  2. What is the gate to source voltage (VGS) rating for the FDMC8622?

    The gate to source voltage (VGS) rating is ±20 V.

  3. What technology is used in the FDMC8622 MOSFET?

    The FDMC8622 uses advanced Power Trench® process with Shielded Gate technology.

  4. What are the key benefits of the Shielded Gate technology in the FDMC8622?

    The Shielded Gate technology enhances performance by reducing gate charge and improving thermal performance.

  5. What types of applications is the FDMC8622 suitable for?

    The FDMC8622 is suitable for power supplies, DC-DC converters, motor control, switching regulators, and automotive/industrial power management systems.

  6. Where can I find detailed specifications for the FDMC8622?

    Detailed specifications can be found in the datasheet available on onsemi's official website and other authorized distributors like Digi-Key and Mouser.

  7. What is the significance of low on-resistance (Rds(on)) in the FDMC8622?

    Low on-resistance (Rds(on)) contributes to high efficiency in power switching applications by minimizing energy losses.

  8. Is the FDMC8622 suitable for high current applications?

    Yes, the FDMC8622 is designed to handle high current, making it suitable for demanding power management tasks.

  9. What is the thermal performance like for the FDMC8622?

    The FDMC8622 has excellent thermal performance, which enhances its reliability and lifespan in various operating conditions.

  10. Can the FDMC8622 be used in automotive applications?

    Yes, the FDMC8622 can be used in automotive power management systems due to its robust design and high performance capabilities.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:4A (Ta), 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:56mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:7.3 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:402 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 31W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-MLP (3.3x3.3)
Package / Case:8-PowerWDFN
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