FDMC8010
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onsemi FDMC8010

Manufacturer No:
FDMC8010
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 30A/75A POWER33
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDMC8010 is an N-Channel MOSFET produced by onsemi, utilizing their advanced PowerTrench® process. This technology is specifically designed to minimize the on-state resistance, enhancing the device's performance and efficiency. The MOSFET is packaged in an 8-pin Power33 package, which is optimized for high-power applications while maintaining excellent thermal management.

Key Specifications

ParameterUnitMinTypMax
Drain to Source Voltage (VDS)V30
Gate to Source Voltage (VGS)V±20
Continuous Drain Current (ID) at TC = 25°CA75
Continuous Drain Current (ID) at TC = 100°CA37
Static Drain to Source On Resistance (rDS(on)) at VGS = 10 V, ID = 30 A0.91.3
Thermal Resistance, Junction to Ambient (RθJA)°C/W42
Operating and Storage Junction Temperature Range°C-55150

Key Features

  • Advanced PowerTrench® process to minimize on-state resistance.
  • Low rDS(on) of 1.3 mΩ at VGS = 10 V, ID = 30 A.
  • High performance technology for excellent switching characteristics.
  • Pb-free and RoHS compliant.
  • 8-pin Power33 package for efficient thermal management.

Applications

  • Load Switch
  • Motor Bridge Switch
  • Synchronous Rectifier
  • General power switching applications where high efficiency and low on-state resistance are required.

Q & A

  1. What is the maximum drain to source voltage of the FDMC8010 MOSFET?
    The maximum drain to source voltage (VDS) is 30 V.
  2. What is the typical on-state resistance of the FDMC8010?
    The typical on-state resistance (rDS(on)) is 1.3 mΩ at VGS = 10 V, ID = 30 A.
  3. What is the continuous drain current rating at TC = 25°C?
    The continuous drain current (ID) at TC = 25°C is 75 A.
  4. Is the FDMC8010 Pb-free and RoHS compliant?
    Yes, the FDMC8010 is Pb-free and RoHS compliant.
  5. What is the thermal resistance, junction to ambient (RθJA), of the FDMC8010?
    The thermal resistance, junction to ambient (RθJA), is 42 °C/W.
  6. What are some common applications for the FDMC8010 MOSFET?
    Common applications include load switching, motor bridge switching, and synchronous rectification.
  7. What is the operating and storage junction temperature range for the FDMC8010?
    The operating and storage junction temperature range is -55°C to 150°C.
  8. What package type is used for the FDMC8010?
    The FDMC8010 is packaged in an 8-pin Power33 package.
  9. Does the FDMC8010 support high-power applications?
    Yes, the FDMC8010 is designed to support high-power applications with its advanced PowerTrench® process and efficient thermal management.
  10. Is the FDMC8010 suitable for use in life support systems or medical devices?
    No, the FDMC8010 is not designed or intended for use in life support systems or medical devices.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:30A (Ta), 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.3mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:94 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5860 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):2.4W (Ta), 54W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:Power33
Package / Case:8-PowerWDFN
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