FDMA86265P
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onsemi FDMA86265P

Manufacturer No:
FDMA86265P
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 150V 1A 6MICROFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDMA86265P is a P-Channel PowerTrench® MOSFET produced by onsemi, formerly known as Fairchild Semiconductor. This device is designed using an advanced PowerTrench® process, which optimizes on-state resistance while maintaining superior performance. The FDMA86265P is suitable for a variety of power management applications due to its robust characteristics and efficient operation.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)150 V
ID (Continuous Drain Current at Ta)1 A
PD (Power Dissipation at Ta)2.4 W
RDS(on) (On-State Resistance)Typically optimized for low on-state resistance
Package TypeSurface Mount 6-MicroFET (2x2)

Key Features

  • Advanced PowerTrench® process for optimized on-state resistance and superior performance.
  • Low on-state resistance.
  • High voltage rating of 150 V.
  • Continuous drain current of 1 A at ambient temperature.
  • Compact surface mount 6-MicroFET (2x2) package.

Applications

  • Power management in consumer electronics.
  • DC-DC converters and power supplies.
  • Motor control and drive systems.
  • Automotive and industrial power systems.
  • General-purpose switching applications.

Q & A

  1. What is the drain-source voltage rating of the FDMA86265P?
    The drain-source voltage rating is 150 V.
  2. What is the continuous drain current at ambient temperature?
    The continuous drain current at ambient temperature is 1 A.
  3. What is the power dissipation at ambient temperature?
    The power dissipation at ambient temperature is 2.4 W.
  4. What package type does the FDMA86265P use?
    The FDMA86265P uses a surface mount 6-MicroFET (2x2) package.
  5. What process is used to manufacture the FDMA86265P?
    The FDMA86265P is manufactured using the advanced PowerTrench® process.
  6. What are some typical applications for the FDMA86265P?
    Typical applications include power management in consumer electronics, DC-DC converters, motor control systems, and general-purpose switching.
  7. Who is the manufacturer of the FDMA86265P?
    The FDMA86265P is manufactured by onsemi.
  8. Where can I find detailed specifications for the FDMA86265P?
    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Digi-Key.
  9. What are the benefits of using the PowerTrench® process in the FDMA86265P?
    The PowerTrench® process optimizes on-state resistance and maintains superior performance.
  10. Is the FDMA86265P suitable for high-voltage applications?
    Yes, the FDMA86265P is suitable for high-voltage applications with a rating of 150 V.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:1A (Ta)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:1.2Ohm @ 1A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:4 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:210 pF @ 75 V
FET Feature:- 
Power Dissipation (Max):2.4W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-MicroFET (2x2)
Package / Case:6-WDFN Exposed Pad
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Similar Products

Part Number FDMA86265P FDMC86265P
Manufacturer onsemi onsemi
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V 150 V
Current - Continuous Drain (Id) @ 25°C 1A (Ta) 1A (Ta), 1.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 1.2Ohm @ 1A, 10V 1.2Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 4 nC @ 10 V 4 nC @ 10 V
Vgs (Max) ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 210 pF @ 75 V 210 pF @ 75 V
FET Feature - -
Power Dissipation (Max) 2.4W (Ta) 2.3W (Ta), 16W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 6-MicroFET (2x2) 8-MLP (3.3x3.3)
Package / Case 6-WDFN Exposed Pad 8-PowerWDFN

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