FDMA410NZT-F130
  • Share:

onsemi FDMA410NZT-F130

Manufacturer No:
FDMA410NZT-F130
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
PT4 NCH 20/8V ZENER IN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDMA410NZT-F130 is an ultra-thin N-Channel PowerTrench® MOSFET produced by onsemi. This device is designed to offer high performance and efficiency in various power management applications. With its compact 2 x 2 mm package, it is ideal for space-constrained designs while providing robust electrical characteristics.

Key Specifications

Parameter Value
Package Type MicroFET 2 x 2 mm
Maximum RDS(on) 23 mΩ at VGS = 4.5 V, ID = 9.5 A
Maximum RDS(on) 29 mΩ at VGS = 2.5 V, ID = 8.0 A
Drain-Source Voltage (VDS) 20 V
Continuous Drain Current (ID) 9.5 A
Gate-Source Voltage (VGS) ± 12 V
Operating Temperature Range -55°C to 150°C
Package Height 0.55 mm max

Key Features

  • Ultra-thin package (2 x 2 mm) for space-saving designs
  • Low on-resistance (RDS(on)) for high efficiency
  • High continuous drain current (ID) of 9.5 A
  • Wide operating temperature range (-55°C to 150°C)
  • PowerTrench® technology for improved performance and reliability

Applications

  • Power management in consumer electronics
  • DC-DC converters and power supplies
  • Motor control and drive systems
  • Automotive and industrial power systems
  • Battery management systems

Q & A

  1. What is the maximum drain-source voltage (VDS) of the FDMA410NZT-F130?

    The maximum drain-source voltage (VDS) is 20 V.

  2. What is the continuous drain current (ID) of the FDMA410NZT-F130?

    The continuous drain current (ID) is 9.5 A.

  3. What is the typical on-resistance (RDS(on)) of the FDMA410NZT-F130 at VGS = 4.5 V?

    The typical on-resistance (RDS(on)) at VGS = 4.5 V is 23 mΩ.

  4. What is the package type and size of the FDMA410NZT-F130?

    The package type is MicroFET, and the size is 2 x 2 mm.

  5. What is the operating temperature range of the FDMA410NZT-F130?

    The operating temperature range is -55°C to 150°C.

  6. What technology is used in the FDMA410NZT-F130?

    The FDMA410NZT-F130 uses PowerTrench® technology.

  7. Is the FDMA410NZT-F130 RoHS compliant?
  8. What are some common applications of the FDMA410NZT-F130?
  9. What is the maximum gate-source voltage (VGS) of the FDMA410NZT-F130?

    The maximum gate-source voltage (VGS) is ± 12 V.

  10. What is the package height of the FDMA410NZT-F130?

    The package height is 0.55 mm max.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:9.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Rds On (Max) @ Id, Vgs:23mOhm @ 9.5A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:14 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:1310 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):900mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-UDFN (2.05x2.05)
Package / Case:6-UDFN Exposed Pad
0 Remaining View Similar

In Stock

$0.35
1,246

Please send RFQ , we will respond immediately.

Same Series
RD15S10HE2X/AA
RD15S10HE2X/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S20WT2S/AA
DD15S20WT2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
RD15S10HT20/AA
RD15S10HT20/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S20Z0X/AA
DD15S20Z0X/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC9W4S10H0S/AA
CBC9W4S10H0S/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S20000
DD26S20000
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200E2X/AA
DD26S200E2X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S500X
DD26S2S500X
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32000X
DD44S32000X
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S00X
DD44S32S00X
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S2S50T0
DD26S2S50T0
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20Z0S
DD15S20Z0S
CONN D-SUB HD RCPT 15P SLDR CUP

Related Product By Categories

NTNS3193NZT5G
NTNS3193NZT5G
onsemi
MOSFET N-CH 20V 224MA 3XLLGA
CSD17484F4
CSD17484F4
Texas Instruments
MOSFET N-CH 30V 3A 3PICOSTAR
NVR5124PLT1G
NVR5124PLT1G
onsemi
MOSFET P-CH 60V 1.1A SOT23-3
IRLML0040TRPBF
IRLML0040TRPBF
Infineon Technologies
MOSFET N-CH 40V 3.6A SOT23
CSD18534Q5AT
CSD18534Q5AT
Texas Instruments
MOSFET N-CHANNEL 60V 50A 8VSON
STD2HNK60Z
STD2HNK60Z
STMicroelectronics
MOSFET N-CH 600V 2A DPAK
IRF740PBF-BE3
IRF740PBF-BE3
Vishay Siliconix
MOSFET N-CH 400V 10A TO220AB
NTMFS4C03NT1G
NTMFS4C03NT1G
onsemi
MOSFET N-CH 30V 30A/136A 5DFN
2N7002AQ-13
2N7002AQ-13
Diodes Incorporated
MOSFET N-CH 60V 180MA SOT23
NTMFS4C55NT1G
NTMFS4C55NT1G
onsemi
MOSFET N-CH 30V 78A SO8FL
STS12NF30L
STS12NF30L
STMicroelectronics
MOSFET N-CH 30V 12A 8SO
NTNS3A65PZT5G
NTNS3A65PZT5G
onsemi
MOSFET P-CH 20V 281MA SOT883

Related Product By Brand

NRVBD1035VCTLT4G
NRVBD1035VCTLT4G
onsemi
DIODE SCHOTTKY DPAK
SBRS81100T3G
SBRS81100T3G
onsemi
DIODE SCHOTTKY 100V 1A SMB
NRVBS240LT3G
NRVBS240LT3G
onsemi
DIODE SCHOTTKY 40V 2A SMB
SZ1SMA5924BT3G
SZ1SMA5924BT3G
onsemi
DIODE ZENER 9.1V 1.5W SMA
1N5353BRL
1N5353BRL
onsemi
DIODE ZENER 16V 5W AXIAL
MMBT2484LT3G
MMBT2484LT3G
onsemi
TRANS NPN 60V 0.1A SOT23-3
FDB024N08BL7
FDB024N08BL7
onsemi
MOSFET N-CH 80V 120A TO263-7
NCV2820MUTBG
NCV2820MUTBG
onsemi
IC AMP CLASS D MONO 8UDFN
MC74AC273DWR2G
MC74AC273DWR2G
onsemi
IC FF D-TYPE SNGL 8BIT 20SOIC
MC74VHC1G32DTT1G
MC74VHC1G32DTT1G
onsemi
IC GATE OR 1CH 2-INP 5TSOP
UC2844D
UC2844D
onsemi
CURRENT MODE PWM CONTROLLER
NCP3232NMNTXG
NCP3232NMNTXG
onsemi
IC REG BUCK ADJUSTABLE 15A 40QFN