Overview
The FDD86250-F085 is an N-Channel Shielded Gate PowerTrench® MOSFET produced by onsemi. This device is designed for high-performance applications requiring low on-resistance and high current handling. With a maximum drain-to-source voltage (VDSS) of 150 V and a maximum continuous drain current (ID) of 50 A, it is well-suited for various power management and control systems. The MOSFET features a typical on-resistance (RDS(on)) of 19.4 mΩ at VGS = 10 V and ID = 20 A, making it efficient for power switching applications.
Key Specifications
| Parameter | Symbol | Test Conditions | Min. | Max. | Units | |
|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 150 | V | |||
| Gate-to-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | VGS = 10 V, TC = 25°C | 50 | A | ||
| Pulsed Drain Current | ID | TC = 25°C (See Figure 4) | A | |||
| Power Dissipation | PD | 160 | W | |||
| Thermal Resistance, Junction to Case | RθJC | 0.94 | °C/W | |||
| Thermal Resistance, Junction to Ambient | RθJA | 40 | °C/W | |||
| On-Resistance | RDS(on) | ID = 20 A, VGS = 10 V, TJ = 25°C | 19.4 | 22 | mΩ | |
| Gate Threshold Voltage | VGS(th) | VGS = VDS, ID = 250 μA | 2 | 3 | 4 | V |
Key Features
- Low On-Resistance: Typical RDS(on) = 19.4 mΩ at VGS = 10 V, ID = 20 A.
- High Current Capability: Maximum continuous drain current of 50 A.
- UIS Capability: Unclamped Inductive Switching capability.
- RoHS Compliant: Compliant with the Restriction of Hazardous Substances directive.
- AEC Q101 Qualified: Qualified to the Automotive Electronics Council Q101 standard.
- Low Gate Charge: Total gate charge (Qg(tot)) of 28 nC at VGS = 10 V, ID = 40 A.
Applications
- Automotive Engine Control: Suitable for engine management systems.
- PowerTrain Management: Used in powertrain control and management.
- Solenoid and Motor Drivers: Drives solenoids and motors efficiently.
- Integrated Starter/Alternator: Used in integrated starter/alternator systems.
- Distributed Power Architectures and VRM: Suitable for distributed power architectures and voltage regulator modules.
- Primary Switch for 12V Systems: Primary switch in 12V automotive systems.
Q & A
- What is the maximum drain-to-source voltage of the FDD86250-F085 MOSFET?
The maximum drain-to-source voltage (VDSS) is 150 V.
- What is the maximum continuous drain current of the FDD86250-F085 MOSFET?
The maximum continuous drain current (ID) is 50 A.
- What is the typical on-resistance of the FDD86250-F085 MOSFET?
The typical on-resistance (RDS(on)) is 19.4 mΩ at VGS = 10 V and ID = 20 A.
- Is the FDD86250-F085 MOSFET RoHS compliant?
Yes, the FDD86250-F085 MOSFET is RoHS compliant.
- What are the typical applications of the FDD86250-F085 MOSFET?
The FDD86250-F085 MOSFET is typically used in automotive engine control, powertrain management, solenoid and motor drivers, integrated starter/alternator systems, distributed power architectures, and as a primary switch for 12V systems.
- What is the gate threshold voltage range of the FDD86250-F085 MOSFET?
The gate threshold voltage (VGS(th)) range is from 2 V to 4 V.
- What is the thermal resistance from junction to case for the FDD86250-F085 MOSFET?
The thermal resistance from junction to case (RθJC) is 0.94 °C/W.
- Is the FDD86250-F085 MOSFET qualified to any automotive standards?
Yes, the FDD86250-F085 MOSFET is qualified to the AEC Q101 standard.
- What is the package type of the FDD86250-F085 MOSFET?
The package type is DPAK (TO-252).
- What are the switching characteristics of the FDD86250-F085 MOSFET?
The switching characteristics include turn-on time (ton) of 64 ns, turn-on delay (td(on)) of 14 ns, rise time (tr) of 34 ns, turn-off delay (td(off)) of 23 ns, and fall time (tf) of 5 ns.
