FDD86252
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onsemi FDD86252

Manufacturer No:
FDD86252
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 150V 5A/27A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDD86252 is an N-Channel PowerTrench® MOSFET produced by onsemi, utilizing an advanced Power Trench process to minimize on-state resistance. This MOSFET is designed for high efficiency and low Rds(on) (on-state resistance), making it suitable for a variety of power management applications. The device is packaged in a thermally efficient TO-252 package and features next-generation enhanced body diode technology for soft recovery.

Key Specifications

ParameterValue
Channel TypeN Channel
Drain-Source Voltage (Vds)150 V
Continuous Drain Current (Id)27 A
On-State Resistance (Rds(on))0.041 ohm
Package TypeTO-252

Key Features

  • Advanced Power Trench process for low on-state resistance
  • Thermally efficient TO-252 package
  • Next-generation enhanced body diode technology for soft recovery
  • High efficiency and low Rds(on)
  • Shielded gate for improved performance

Applications

The FDD86252 MOSFET is suitable for various power management applications, including but not limited to:

  • DC-DC converters
  • Power supplies
  • Motor control and drives
  • Automotive systems
  • Industrial power systems

Q & A

  1. What is the drain-source voltage rating of the FDD86252 MOSFET?
    The drain-source voltage rating is 150 V.
  2. What is the continuous drain current rating of the FDD86252 MOSFET?
    The continuous drain current rating is 27 A.
  3. What is the on-state resistance (Rds(on)) of the FDD86252 MOSFET?
    The on-state resistance is 0.041 ohm.
  4. What package type is the FDD86252 MOSFET available in?
    The FDD86252 MOSFET is available in the TO-252 package.
  5. What technology is used in the FDD86252 MOSFET to enhance its performance?
    The FDD86252 MOSFET uses advanced Power Trench process and next-generation enhanced body diode technology.
  6. What are some common applications of the FDD86252 MOSFET?
    Common applications include DC-DC converters, power supplies, motor control and drives, automotive systems, and industrial power systems.
  7. Why is the shielded gate feature important in the FDD86252 MOSFET?
    The shielded gate feature improves the performance and stability of the MOSFET.
  8. How does the thermally efficient package benefit the FDD86252 MOSFET?
    The thermally efficient package helps in better heat dissipation, enhancing the overall performance and reliability of the MOSFET.
  9. What is the significance of soft recovery in the FDD86252 MOSFET?
    Soft recovery reduces switching losses and improves the overall efficiency of the system.
  10. Where can I find detailed specifications for the FDD86252 MOSFET?
    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser Electronics.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:5A (Ta), 27A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:52mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:16 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:985 pF @ 75 V
FET Feature:- 
Power Dissipation (Max):3.1W (Ta), 89W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number FDD86252 FDD86250
Manufacturer onsemi onsemi
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V 150 V
Current - Continuous Drain (Id) @ 25°C 5A (Ta), 27A (Tc) 8A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 52mOhm @ 5A, 10V 22mOhm @ 8A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16 nC @ 10 V 33 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 985 pF @ 75 V 2110 pF @ 75 V
FET Feature - -
Power Dissipation (Max) 3.1W (Ta), 89W (Tc) 3.1W (Ta), 132W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-252AA TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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