Overview
The FDD4685TF_SB82135 is a 40V P-Channel PowerTrench® MOSFET produced by onsemi. This device is designed using Fairchild Semiconductor’s proprietary PowerTrench® technology, which delivers extremely low on-resistance (rDS(on)) and excellent switching characteristics. The MOSFET is packaged in a D-PAK (TO-252) surface mount package, making it suitable for a variety of high-performance applications.
Key Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Units |
|---|---|---|---|---|---|---|
| Drain to Source Voltage | VDS | -40 | V | |||
| Gate to Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current (Package Limited) | ID | TC = 25°C | -32 | A | ||
| Continuous Drain Current (Silicon Limited) | ID | TC = 25°C | -40 | A | ||
| Pulsed Drain Current | ID | -100 | A | |||
| Drain-Source On Resistance | rDS(on) | VGS = -10V, ID = -8.4A | 23 | 27 | 33 | mΩ |
| Drain-Source On Resistance | rDS(on) | VGS = -4.5V, ID = -7A | 30 | 35 | 42 | mΩ |
| Thermal Resistance, Junction to Case | RθJC | 1.8 | °C/W | |||
| Thermal Resistance, Junction to Ambient | RθJA | 40 | °C/W | |||
| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 | +150 | °C |
Key Features
- High performance trench technology for extremely low rDS(on)
- Maximum rDS(on) of 27mΩ at VGS = -10V, ID = -8.4A and 35mΩ at VGS = -4.5V, ID = -7A
- RoHS Compliant
- Excellent switching characteristics
- High drain current capability: up to -32A continuous and -100A pulsed
- Low gate to source threshold voltage: -1 to -3V
- Low thermal resistance: RθJC = 1.8°C/W and RθJA = 40°C/W
Applications
- Inverter applications
- Power supplies
Q & A
- What is the maximum drain to source voltage of the FDD4685TF_SB82135 MOSFET?
The maximum drain to source voltage (VDS) is -40V.
- What is the maximum continuous drain current for this MOSFET?
The maximum continuous drain current (ID) is -32A at TC = 25°C and -40A at TA = 25°C.
- What is the typical on-resistance (rDS(on)) of the FDD4685TF_SB82135?
The typical on-resistance (rDS(on)) is 27mΩ at VGS = -10V, ID = -8.4A.
- Is the FDD4685TF_SB82135 RoHS compliant?
- What is the thermal resistance, junction to case (RθJC), of this MOSFET?
The thermal resistance, junction to case (RθJC), is 1.8°C/W.
- What are the typical applications for the FDD4685TF_SB82135 MOSFET?
The typical applications include inverter and power supply applications.
- What is the package type of the FDD4685TF_SB82135 MOSFET?
The package type is D-PAK (TO-252).
- What is the operating and storage junction temperature range for this MOSFET?
The operating and storage junction temperature range is -55°C to +150°C.
- What is the gate to source threshold voltage (VGS(th)) of the FDD4685TF_SB82135?
The gate to source threshold voltage (VGS(th)) is -1 to -3V.
- What is the maximum power dissipation (PD) of this MOSFET at TC = 25°C?
The maximum power dissipation (PD) is 69W at TC = 25°C.
