Overview
The FDD3860-G is an N-Channel PowerTrench® MOSFET produced by onsemi. This component is designed using onsemi's advanced PowerTrench® process, which is tailored for low rDS(on) and low Qg figure of merit. It also features avalanche ruggedness, making it suitable for a variety of power management applications. The FDD3860-G is known for its high density trench MOSFET process, which enhances its performance in terms of on-resistance and gate charge.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| VDS (Drain to Source Voltage) | 60 | V |
| VGS (Gate to Source Voltage) | ±20 | V |
| ID (Continuous Drain Current) | 12 | A |
| rDS(on) (On-Resistance) | 12.5 mΩ (Typical at VGS = 10V) | mΩ |
| Qg (Total Gate Charge) | 43 nC (Typical at VGS = 10V) | nC |
| RθJA (Junction to Ambient Thermal Resistance) | 62 °C/W | °C/W |
Key Features
- Low rDS(on): The FDD3860-G features a low on-resistance, which reduces power losses and enhances efficiency in power management applications.
- Low Qg: The low total gate charge (Qg) improves switching performance and reduces the energy required for switching, making it suitable for high-frequency applications.
- Avalanche Ruggedness: This MOSFET is designed with avalanche ruggedness, providing robustness against transient voltages and ensuring reliability in demanding environments.
- High Density Trench MOSFET Process: The use of onsemi's advanced PowerTrench® process enhances the component's performance by minimizing on-resistance and gate charge.
Applications
- Power Management: The FDD3860-G is ideal for various power management applications, including DC-DC converters, power supplies, and motor control systems due to its low rDS(on) and low Qg.
- Industrial Control: It is suitable for industrial control systems, such as those used in automation and robotics, where high reliability and efficiency are crucial.
- Consumer Electronics: This MOSFET can be used in consumer electronics for power switching and management, such as in power adapters and battery chargers.
Q & A
- What is the maximum drain to source voltage (VDS) for the FDD3860-G?
The maximum drain to source voltage (VDS) for the FDD3860-G is 60 V.
- What is the typical on-resistance (rDS(on)) of the FDD3860-G?
The typical on-resistance (rDS(on)) of the FDD3860-G is 12.5 mΩ at VGS = 10V.
- What is the total gate charge (Qg) of the FDD3860-G?
The total gate charge (Qg) of the FDD3860-G is 43 nC (Typical at VGS = 10V).
- What is the junction to ambient thermal resistance (RθJA) of the FDD3860-G?
The junction to ambient thermal resistance (RθJA) of the FDD3860-G is 62 °C/W.
- Is the FDD3860-G suitable for high-frequency applications?
Yes, the FDD3860-G is suitable for high-frequency applications due to its low Qg and low rDS(on).
- What process is used to manufacture the FDD3860-G?
The FDD3860-G is manufactured using onsemi's advanced PowerTrench® process.
- Is the FDD3860-G avalanche rugged?
Yes, the FDD3860-G is designed with avalanche ruggedness, providing robustness against transient voltages.
- What are some common applications of the FDD3860-G?
The FDD3860-G is commonly used in power management, industrial control, and consumer electronics applications.
- Is the FDD3860-G suitable for automotive or military applications?
No, the FDD3860-G is not intended for use in automotive, military, or any safety-critical applications without specific approval from onsemi.
- Where should I purchase the FDD3860-G to ensure authenticity?
You should purchase the FDD3860-G directly from onsemi or from authorized onsemi distributors to ensure authenticity and full warranty coverage.
