FDC3535
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onsemi FDC3535

Manufacturer No:
FDC3535
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 80V 2.1A SUPERSOT6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDC3535 is a P-Channel Power Trench® MOSFET produced by onsemi, utilizing an advanced Power Trench® process. This MOSFET is optimized for low on-resistance (rDS(on)), high switching performance, and ruggedness. It is suitable for a wide range of general-purpose applications due to its high power and current handling capabilities in a compact surface mount package.

Key Specifications

Parameter Value Units
Drain to Source Voltage (VDS) -80 V
Gate to Source Voltage (VGS) ±20 V
Continuous Drain Current (ID) -2.1 A
Pulsed Drain Current (ID) -10 A
Power Dissipation (PD) 1.6 W
On-Resistance (rDS(on)) at VGS = -10 V, ID = -2.1 A 183
On-Resistance (rDS(on)) at VGS = -4.5 V, ID = -1.9 A 233
Gate to Source Threshold Voltage (VGS(th)) -1 to -3 V
Thermal Resistance, Junction to Case (RθJC) 30 °C/W
Thermal Resistance, Junction to Ambient (RθJA) 78 °C/W
Operating and Storage Junction Temperature Range -55 to +150 °C

Key Features

  • High performance trench technology for extremely low rDS(on)
  • High power and current handling capability in a widely used surface mount package (TSOT-23-6)
  • Fast switching speed
  • 100% UIL Tested
  • RoHS Compliant

Applications

  • Load Switch
  • Synchronous Rectifier
  • General-purpose applications requiring high power and current handling

Q & A

  1. What is the maximum drain to source voltage (VDS) of the FDC3535 MOSFET?

    The maximum drain to source voltage (VDS) is -80 V.

  2. What is the maximum continuous drain current (ID) of the FDC3535 MOSFET?

    The maximum continuous drain current (ID) is -2.1 A.

  3. What is the on-resistance (rDS(on)) of the FDC3535 MOSFET at VGS = -10 V and ID = -2.1 A?

    The on-resistance (rDS(on)) is 183 mΩ at VGS = -10 V and ID = -2.1 A.

  4. Is the FDC3535 MOSFET RoHS compliant?
  5. What is the thermal resistance, junction to ambient (RθJA), of the FDC3535 MOSFET?

    The thermal resistance, junction to ambient (RθJA), is 78 °C/W.

  6. What are the typical applications of the FDC3535 MOSFET?

    The FDC3535 MOSFET is typically used in load switch and synchronous rectifier applications.

  7. What is the package type of the FDC3535 MOSFET?

    The package type is TSOT-23-6.

  8. Is the FDC3535 MOSFET still in production?

    No, the FDC3535 MOSFET is obsolete and no longer manufactured.

  9. What are some key features of the FDC3535 MOSFET?

    Key features include high performance trench technology, fast switching speed, and high power and current handling capability.

  10. What is the gate to source threshold voltage (VGS(th)) range of the FDC3535 MOSFET?

    The gate to source threshold voltage (VGS(th)) range is -1 to -3 V.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:2.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:183mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:880 pF @ 40 V
FET Feature:- 
Power Dissipation (Max):1.6W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SuperSOT™-6
Package / Case:SOT-23-6 Thin, TSOT-23-6
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