FDC3535
  • Share:

onsemi FDC3535

Manufacturer No:
FDC3535
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 80V 2.1A SUPERSOT6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDC3535 is a P-Channel Power Trench® MOSFET produced by onsemi, utilizing an advanced Power Trench® process. This MOSFET is optimized for low on-resistance (rDS(on)), high switching performance, and ruggedness. It is suitable for a wide range of general-purpose applications due to its high power and current handling capabilities in a compact surface mount package.

Key Specifications

Parameter Value Units
Drain to Source Voltage (VDS) -80 V
Gate to Source Voltage (VGS) ±20 V
Continuous Drain Current (ID) -2.1 A
Pulsed Drain Current (ID) -10 A
Power Dissipation (PD) 1.6 W
On-Resistance (rDS(on)) at VGS = -10 V, ID = -2.1 A 183
On-Resistance (rDS(on)) at VGS = -4.5 V, ID = -1.9 A 233
Gate to Source Threshold Voltage (VGS(th)) -1 to -3 V
Thermal Resistance, Junction to Case (RθJC) 30 °C/W
Thermal Resistance, Junction to Ambient (RθJA) 78 °C/W
Operating and Storage Junction Temperature Range -55 to +150 °C

Key Features

  • High performance trench technology for extremely low rDS(on)
  • High power and current handling capability in a widely used surface mount package (TSOT-23-6)
  • Fast switching speed
  • 100% UIL Tested
  • RoHS Compliant

Applications

  • Load Switch
  • Synchronous Rectifier
  • General-purpose applications requiring high power and current handling

Q & A

  1. What is the maximum drain to source voltage (VDS) of the FDC3535 MOSFET?

    The maximum drain to source voltage (VDS) is -80 V.

  2. What is the maximum continuous drain current (ID) of the FDC3535 MOSFET?

    The maximum continuous drain current (ID) is -2.1 A.

  3. What is the on-resistance (rDS(on)) of the FDC3535 MOSFET at VGS = -10 V and ID = -2.1 A?

    The on-resistance (rDS(on)) is 183 mΩ at VGS = -10 V and ID = -2.1 A.

  4. Is the FDC3535 MOSFET RoHS compliant?
  5. What is the thermal resistance, junction to ambient (RθJA), of the FDC3535 MOSFET?

    The thermal resistance, junction to ambient (RθJA), is 78 °C/W.

  6. What are the typical applications of the FDC3535 MOSFET?

    The FDC3535 MOSFET is typically used in load switch and synchronous rectifier applications.

  7. What is the package type of the FDC3535 MOSFET?

    The package type is TSOT-23-6.

  8. Is the FDC3535 MOSFET still in production?

    No, the FDC3535 MOSFET is obsolete and no longer manufactured.

  9. What are some key features of the FDC3535 MOSFET?

    Key features include high performance trench technology, fast switching speed, and high power and current handling capability.

  10. What is the gate to source threshold voltage (VGS(th)) range of the FDC3535 MOSFET?

    The gate to source threshold voltage (VGS(th)) range is -1 to -3 V.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:2.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:183mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:880 pF @ 40 V
FET Feature:- 
Power Dissipation (Max):1.6W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SuperSOT™-6
Package / Case:SOT-23-6 Thin, TSOT-23-6
0 Remaining View Similar

In Stock

$0.68
1,135

Please send RFQ , we will respond immediately.

Related Product By Categories

STD26P3LLH6
STD26P3LLH6
STMicroelectronics
MOSFET P-CH 30V 12A DPAK
BSC040N10NS5ATMA1
BSC040N10NS5ATMA1
Infineon Technologies
MOSFET N-CH 100V 100A TDSON
AO3400-5.8A
AO3400-5.8A
MDD
MOSFET SOT-23 N Channel 30V
AO4407A
AO4407A
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 12A 8SOIC
CSD18531Q5AT
CSD18531Q5AT
Texas Instruments
MOSFET N-CH 60V 100A 8VSON
STW45N60DM2AG
STW45N60DM2AG
STMicroelectronics
MOSFET N-CH 600V 34A TO247
PMV50XP215
PMV50XP215
NXP USA Inc.
P-CHANNEL MOSFET
PMCXB900UE147
PMCXB900UE147
NXP USA Inc.
SMALL SIGNAL FET
STH150N10F7-2
STH150N10F7-2
STMicroelectronics
MOSFET N-CH 100V 110A H2PAK-2
NTMFS5C612NLT1G
NTMFS5C612NLT1G
onsemi
MOSFET N-CH 60V 36A/235A 5DFN
BSS84PW
BSS84PW
Infineon Technologies
MOSFET P-CH 60V 150MA SOT323-3
MCH3478-TL-W
MCH3478-TL-W
onsemi
MOSFET N-CH 30V 2A 3MCPH

Related Product By Brand

ESD7481MUT5G
ESD7481MUT5G
onsemi
TVS DIODE 3.3VWM 12VC 2X3DFN
SZESD7461N2T5G
SZESD7461N2T5G
onsemi
TVS DIODE 16VWM 39VC 2XDFN
MMSZ5233BT1G
MMSZ5233BT1G
onsemi
DIODE ZENER 6V 500MW SOD123
MMBZ5244BLT1G
MMBZ5244BLT1G
onsemi
DIODE ZENER 14V 225MW SOT23-3
NTD3055L170-1G
NTD3055L170-1G
onsemi
MOSFET N-CH 60V 9A IPAK
NLV17SZU04DFT2G
NLV17SZU04DFT2G
onsemi
IC INVERTER 1CH 1-INP SC88A
MC100ELT21DR2G
MC100ELT21DR2G
onsemi
IC TRNSLTR UNIDIRECTIONAL 8SOIC
NCV7720DQR2G
NCV7720DQR2G
onsemi
IC MOTOR DRVR 3.15V-5.25V 24SSOP
NCP302HSN27T1G
NCP302HSN27T1G
onsemi
IC SUPERVISOR 1 CHANNEL 5TSOP
TLV431ALPG
TLV431ALPG
onsemi
IC VREF SHUNT ADJ 1% TO92-3
NCP584HSN33T1G
NCP584HSN33T1G
onsemi
IC REG LINEAR 3.3V 200MA SOT23-5
FOD817B3SD
FOD817B3SD
onsemi
OPTOISOLATOR 5KV TRANSISTOR 4SMD