Overview
The FDC021N30 is a small signal MOSFET produced by onsemi. This N-Channel enhancement mode field effect transistor is designed for various low-power applications. It is part of onsemi's portfolio of discrete power modules and is known for its high performance and reliability.
The device is fabricated using onsemi's advanced technology, ensuring low on-state resistance and high efficiency. It is suitable for use in power amplifiers, voltage regulators, and switching circuits.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDSS) | 30 | V |
| Gate-Source Voltage (VGS) | ±20 | V |
| Continuous Drain Current (ID) | 2.1 | A |
| Pulse Drain Current (ID) | 4.2 | A |
| On-State Resistance (RDS(on)) at VGS = 10 V | 21 | mΩ |
| Threshold Voltage (VGS(th)) | 1.0 - 2.5 | V |
| Operating Temperature Range | -55 to 150 | °C |
| Maximum Power Dissipation (PD) | 1.3 | W |
Key Features
- Low on-state resistance, enhancing efficiency in power applications.
- High current handling capability, suitable for a variety of power amplifiers and switching circuits.
- Wide operating temperature range, making it versatile for different environmental conditions.
- Compact package, ideal for space-constrained designs.
- Pb-free and halide-free, complying with environmental regulations.
Applications
- Power amplifiers: Used in audio and RF amplifiers due to its low on-state resistance and high current handling.
- Voltage regulators: Suitable for voltage regulation in power supplies and DC-DC converters.
- Switching circuits: Ideal for high-frequency switching applications such as in power management and control systems.
- Automotive and industrial control systems: Used in various control and power management applications in automotive and industrial sectors.
Q & A
- What is the maximum drain-source voltage of the FDC021N30 MOSFET?
The maximum drain-source voltage (VDSS) is 30 V.
- What is the continuous drain current rating of the FDC021N30?
The continuous drain current (ID) is 2.1 A.
- What is the on-state resistance of the FDC021N30 at VGS = 10 V?
The on-state resistance (RDS(on)) at VGS = 10 V is 21 mΩ.
- What is the operating temperature range of the FDC021N30?
The operating temperature range is -55 to 150 °C.
- Is the FDC021N30 Pb-free and halide-free?
- What are the typical applications of the FDC021N30 MOSFET?
Typical applications include power amplifiers, voltage regulators, and switching circuits.
- What is the maximum power dissipation of the FDC021N30?
The maximum power dissipation (PD) is 1.3 W.
- What is the threshold voltage range of the FDC021N30?
The threshold voltage (VGS(th)) range is 1.0 to 2.5 V.
- Is the FDC021N30 suitable for high-frequency switching applications?
- What is the package type of the FDC021N30?
The package type is not specified in the provided sources, but it is typically available in standard packages such as SOT-23 or similar compact packages.
