FDBL9401-F085
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onsemi FDBL9401-F085

Manufacturer No:
FDBL9401-F085
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 300A 8HPSOF
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDBL9401-F085 is a high-performance, single N-channel power MOSFET produced by onsemi. This device is part of the PowerTrench® family and is designed to offer low on-resistance (RDS(on)) and minimal driver losses, making it ideal for various high-power applications. The MOSFET is AEC-Q101 qualified and PPAP capable, ensuring its reliability and suitability for automotive and other demanding environments. It features a small footprint in the TOLL package, which is Pb-free, halogen-free, and RoHS compliant.

Key Specifications

ParameterSymbolValueUnit
Drain-to-Source VoltageVDSS40V
Gate-to-Source VoltageVGS+20/−16V
Continuous Drain Current (TC = 25°C)ID300A
On-Resistance (RDS(on))RDS(on)0.65 mΩ
Gate Threshold VoltageVGS(th)2 - 4V
Zero Gate Voltage Drain CurrentIDSS1 μA (TJ = 25°C), 1 mA (TJ = 175°C)A
Gate-to-Source Leakage CurrentIGSS±100 nAA
Thermal Resistance, Junction to CaseRθJC0.35°C/W
Thermal Resistance, Junction to AmbientRθJA43°C/W

Key Features

  • Low RDS(on) to minimize conduction losses
  • Low QG and capacitance to minimize driver losses
  • AEC-Q101 qualified and PPAP capable
  • Small footprint in TOLL package for compact design
  • Pb-free, halogen-free, and RoHS compliant
  • UIS capability and excellent avalanche ruggedness
  • Low thermal resistance and high thermal performance

Applications

  • Automotive engine control and powertrain management
  • Solenoid and motor drivers
  • Integrated starter/alternator systems
  • Primary switch for 12 V systems
  • Battery cell balancing and Battery Management System (BMS) applications

Q & A

  1. What is the maximum drain-to-source voltage of the FDBL9401-F085 MOSFET?
    The maximum drain-to-source voltage (VDSS) is 40 V.
  2. What is the continuous drain current rating at 25°C?
    The continuous drain current (ID) is 300 A at 25°C.
  3. What is the typical on-resistance (RDS(on)) of this MOSFET?
    The typical on-resistance (RDS(on)) is 0.65 mΩ.
  4. Is the FDBL9401-F085 AEC-Q101 qualified?
    Yes, the FDBL9401-F085 is AEC-Q101 qualified and PPAP capable.
  5. What is the thermal resistance from junction to case (RθJC)?
    The thermal resistance from junction to case (RθJC) is 0.35 °C/W.
  6. What are the typical applications of the FDBL9401-F085 MOSFET?
    Typical applications include automotive engine control, powertrain management, solenoid and motor drivers, integrated starter/alternator systems, and primary switches for 12 V systems.
  7. Is the FDBL9401-F085 Pb-free and RoHS compliant?
    Yes, the FDBL9401-F085 is Pb-free, halogen-free, and RoHS compliant.
  8. What is the gate threshold voltage range of the FDBL9401-F085?
    The gate threshold voltage (VGS(th)) range is from 2 to 4 V.
  9. Does the FDBL9401-F085 have UIS capability?
    Yes, the FDBL9401-F085 has UIS capability and excellent avalanche ruggedness.
  10. What package type is the FDBL9401-F085 available in?
    The FDBL9401-F085 is available in the TOLL package.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:300A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:0.65mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:296 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:15900 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):429W (Tj)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-HPSOF
Package / Case:8-PowerSFN
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Similar Products

Part Number FDBL9401-F085 FDBL9401L-F085 FDBL9406-F085 FDBL9403-F085
Manufacturer onsemi onsemi onsemi onsemi
Product Status Last Time Buy Obsolete Last Time Buy Last Time Buy
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 300A (Tc) 300A (Tc) 240A (Tc) 240A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 4.5V, 10V 10V 10V
Rds On (Max) @ Id, Vgs 0.65mOhm @ 80A, 10V 0.55mOhm @ 80A, 10V 1.2mOhm @ 80A, 10V 0.9mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 3V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 296 nC @ 10 V 376 nC @ 10 V 107 nC @ 10 V 188 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 15900 pF @ 25 V 19550 pF @ 20 V 7735 pF @ 25 V 12000 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 429W (Tj) 429W (Tc) 300W (Tj) 357W (Tj)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-HPSOF 8-HPSOF 8-HPSOF 8-HPSOF
Package / Case 8-PowerSFN 8-PowerSFN 8-PowerSFN 8-PowerSFN

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