FDBL86210-F085
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onsemi FDBL86210-F085

Manufacturer No:
FDBL86210-F085
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 150V 169A 8HPSOF
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDBL86210-F085 is a high-performance N-Channel Power Trench MOSFET produced by onsemi. This device is designed to offer superior power handling and efficiency, making it suitable for a wide range of high-power applications. With its robust design and advanced semiconductor technology, the FDBL86210-F085 provides reliable operation in demanding environments.

Key Specifications

ParameterValue
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage150 V
Id - Continuous Drain Current169 A
Rds(on) - On-Resistance6.3 mΩ @ 80 A, 10 V
Package TypeHPSOF-8
Power Dissipation500 W
Threshold Voltage4 V @ 250 μA

Key Features

  • High continuous drain current of 169 A, making it suitable for high-power applications.
  • Low on-resistance (Rds(on)) of 6.3 mΩ @ 80 A, 10 V, which enhances efficiency and reduces power losses.
  • High drain-source breakdown voltage of 150 V, providing robust protection against voltage spikes.
  • HPSOF-8 package, offering a compact and thermally efficient design.
  • Compliant with RoHS standards, ensuring environmental sustainability.

Applications

The FDBL86210-F085 is versatile and can be used in various high-power applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Industrial power systems and automation.
  • Renewable energy systems, such as solar and wind power.
  • Automotive systems, including electric vehicles and hybrid vehicles.

Q & A

  1. What is the maximum continuous drain current of the FDBL86210-F085?
    The maximum continuous drain current is 169 A.
  2. What is the drain-source breakdown voltage of the FDBL86210-F085?
    The drain-source breakdown voltage is 150 V.
  3. What is the on-resistance (Rds(on)) of the FDBL86210-F085?
    The on-resistance is 6.3 mΩ @ 80 A, 10 V.
  4. What package type is the FDBL86210-F085 available in?
    The FDBL86210-F085 is available in the HPSOF-8 package.
  5. Is the FDBL86210-F085 RoHS compliant?
    Yes, the FDBL86210-F085 is RoHS compliant.
  6. What are some common applications of the FDBL86210-F085?
    Common applications include power supplies, motor control systems, industrial power systems, renewable energy systems, and automotive systems.
  7. What is the threshold voltage of the FDBL86210-F085?
    The threshold voltage is 4 V @ 250 μA.
  8. How much power can the FDBL86210-F085 dissipate?
    The FDBL86210-F085 can dissipate up to 500 W.
  9. Who is the manufacturer of the FDBL86210-F085?
    The manufacturer is onsemi.
  10. Where can I find detailed specifications for the FDBL86210-F085?
    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like DigiKey and Mouser.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:169A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:6.3mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:90 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5805 pF @ 75 V
FET Feature:- 
Power Dissipation (Max):500W (Tj)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-HPSOF
Package / Case:8-PowerSFN
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