Overview
The FDA50N50 is a high-voltage N-Channel MOSFET from ON Semiconductor, part of their UniFET family. This device is designed using planar stripe and DMOS technology to offer reduced on-state resistance, improved switching performance, and higher avalanche energy strength. The FDA50N50 is suitable for various high-power switching applications, making it a versatile component in modern power electronics.
Key Specifications
| Parameter | Symbol | Unit | Typical Value | Maximum Value |
|---|---|---|---|---|
| Drain to Source Voltage | VDSS | V | - | 500 |
| Continuous Drain Current at 25°C | ID | A | - | 48 |
| Continuous Drain Current at 100°C | ID | A | - | 30.8 |
| Pulsed Drain Current | IDM | A | - | 192 |
| Gate-Source Voltage | VGSS | V | - | ±20 |
| Static Drain-Source On-Resistance | RDS(on) | mΩ | 0.089 | 0.105 |
| Gate Threshold Voltage | VGS(th) | V | 3.0 | 5.0 |
| Total Gate Charge | Qg | nC | 105 | 137 |
| Power Dissipation at 25°C | PD | W | - | 625 |
| Operating and Storage Temperature Range | TJ, TSTG | °C | -55 to +150 | - |
Key Features
- Low on-state resistance (RDS(on) = 89 mΩ typical at VGS = 10 V, ID = 24 A)
- Low gate charge (Typ. 105 nC)
- Low Crss (Typ. 45 pF)
- 100% Avalanche tested
- Improved dv/dt capability
- Pb-free and RoHS compliant
Applications
- Switching power converter applications such as power factor correction (PFC)
- Flat panel display (FPD) TV power
- ATX power supplies
- Electronic lamp ballasts
- Lighting systems
- Uninterruptible Power Supply (UPS)
- AC-DC power supplies
Q & A
- What is the maximum drain to source voltage of the FDA50N50 MOSFET?
The maximum drain to source voltage (VDSS) is 500 V.
- What is the continuous drain current at 25°C for the FDA50N50?
The continuous drain current at 25°C is 48 A.
- What is the typical on-state resistance of the FDA50N50?
The typical on-state resistance (RDS(on)) is 89 mΩ at VGS = 10 V, ID = 24 A.
- Is the FDA50N50 Pb-free and RoHS compliant?
- What are some common applications of the FDA50N50 MOSFET?
- What is the maximum gate-source voltage for the FDA50N50?
The maximum gate-source voltage (VGSS) is ±20 V.
- What is the total gate charge of the FDA50N50?
The total gate charge (Qg) is typically 105 nC.
- What is the operating and storage temperature range for the FDA50N50?
The operating and storage temperature range is -55°C to +150°C.
- Is the FDA50N50 suitable for high-power switching applications?
- What is the maximum power dissipation at 25°C for the FDA50N50?
The maximum power dissipation at 25°C is 625 W.
