FCPF360N65S3R0L-F154
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onsemi FCPF360N65S3R0L-F154

Manufacturer No:
FCPF360N65S3R0L-F154
Manufacturer:
onsemi
Package:
Tube
Description:
POWER MOSFET, N-CHANNEL, SUPERFE
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FCPF360N65S3R0L-F154 is a high-voltage N-Channel MOSFET from ON Semiconductor, part of their SUPERFET III family. This device utilizes charge-balance technology to achieve outstanding low on-resistance and lower gate-charge performance. It is designed to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rates. The Easy Drive series of SUPERFET III MOSFETs helps manage EMI issues and simplifies design implementation.

Key Specifications

ParameterValue
Channel TypeN-Channel
Maximum Continuous Drain Current10 A
Maximum Drain Source Voltage650 V
Maximum Drain Source Resistance (RDS(on))360 mΩ (Typ. 310 mΩ at VGS = 10 V)
Maximum Gate Threshold Voltage4.5 V
Gate Charge (Qg)18 nC (Typ. at VGS = 4.5 V)
Effective Output Capacitance (Coss(eff.))173 pF (Typ.)
Internal Gate Resistance1 Ω
Power Dissipation (PD)27 W
Operating Temperature Range-55°C to +150°C
Package TypeTO-220F Ultra narrow lead
Mounting TypeThrough Hole
Pin Count3

Key Features

  • Utilizes charge-balance technology for low on-resistance and lower gate-charge performance.
  • Superior switching performance and ability to withstand extreme dv/dt rates.
  • Ultra low gate charge (Typ. Qg = 18 nC).
  • Low effective output capacitance (Typ. Coss(eff.) = 173 pF).
  • Internal gate resistance of 1 Ω.
  • RoHS compliant and 100% avalanche tested.

Applications

  • Computing: Notebook, desktop computers, and game consoles.
  • Consumer electronics: LCD/LED TVs, LED lighting, and ballasts.
  • Industrial applications: Adapters and power supplies.
  • Telecom and server systems.

Q & A

  1. What is the maximum continuous drain current of the FCPF360N65S3R0L-F154 MOSFET?
    The maximum continuous drain current is 10 A.
  2. What is the maximum drain source voltage of this MOSFET?
    The maximum drain source voltage is 650 V.
  3. What is the typical on-resistance of the FCPF360N65S3R0L-F154?
    The typical on-resistance (RDS(on)) is 310 mΩ at VGS = 10 V.
  4. What is the gate charge of this MOSFET?
    The typical gate charge (Qg) is 18 nC at VGS = 4.5 V.
  5. What is the operating temperature range of the FCPF360N65S3R0L-F154?
    The operating temperature range is -55°C to +150°C.
  6. What package type does the FCPF360N65S3R0L-F154 come in?
    The package type is TO-220F Ultra narrow lead.
  7. Is the FCPF360N65S3R0L-F154 RoHS compliant?
    Yes, it is RoHS compliant.
  8. What are some common applications for this MOSFET?
    Common applications include computing, consumer electronics, industrial applications, and telecom/server systems.
  9. What is the internal gate resistance of the FCPF360N65S3R0L-F154?
    The internal gate resistance is 1 Ω.
  10. Is the FCPF360N65S3R0L-F154 100% avalanche tested?
    Yes, it is 100% avalanche tested.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:10A (Tj)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:360mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:4.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs:18 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:730 pF @ 400 V
FET Feature:- 
Power Dissipation (Max):27W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220F-3
Package / Case:TO-220-3 Full Pack
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