FCP190N65S3R0
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onsemi FCP190N65S3R0

Manufacturer No:
FCP190N65S3R0
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 650V 17A TO220-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FCP190N65S3R0 is a high-voltage N-Channel MOSFET from ON Semiconductor, part of their SUPERFET III family. This MOSFET utilizes charge-balance technology to achieve outstanding low on-resistance and lower gate charge performance. It is designed to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rates. The Easy Drive series of SUPERFET III MOSFETs helps manage EMI issues and simplifies design implementation.

Key Specifications

ParameterValue
Channel PolarityN-Channel
Package TypeTO-220-3
VDS (Max)650 V
ID (Max)17 A
RDS(on) (Typ @ VGS = 10 V)159 mΩ
VGS (Max)±30 V
VGS(th) (Max)4.5 V
PD (Max)144 W
Minimum Operating Temperature-55 °C
Maximum Operating Temperature+150 °C
Gate Charge (Typ @ VGS = 4.5 V)33 nC
Effective Output Capacitance (Typ)300 pF
Internal Gate Resistance0.5 Ω

Key Features

  • Utilizes charge-balance technology for low on-resistance and lower gate charge performance.
  • Superior switching performance and ability to withstand extreme dv/dt rates.
  • Low Effective Output Capacitance (Typ. Coss(eff.)= 300 pF).
  • Ultra Low Gate Charge (Typ. Qg= 33 nC).
  • Optimized Capacitance.
  • 100% Avalanche Tested.
  • RoHS Compliant.

Applications

  • Computing: Notebook, Desktop computer, Game console.
  • Consumer Electronics.
  • Industrial Applications.
  • Telecom / Server.
  • LCD / LED TV.
  • LED Lighting / Ballast.
  • Adapter.

Q & A

  1. What is the maximum voltage rating of the FCP190N65S3R0 MOSFET?
    The maximum voltage rating is 650 V.
  2. What is the maximum current rating of the FCP190N65S3R0 MOSFET?
    The maximum current rating is 17 A.
  3. What is the typical on-resistance of the FCP190N65S3R0 MOSFET at VGS = 10 V?
    The typical on-resistance is 159 mΩ.
  4. What is the maximum gate-source voltage of the FCP190N65S3R0 MOSFET?
    The maximum gate-source voltage is ±30 V.
  5. What is the typical gate charge of the FCP190N65S3R0 MOSFET at VGS = 4.5 V?
    The typical gate charge is 33 nC.
  6. Is the FCP190N65S3R0 MOSFET RoHS compliant?
    Yes, it is RoHS compliant.
  7. What are the operating temperature ranges for the FCP190N65S3R0 MOSFET?
    The operating temperature ranges are from -55 °C to +150 °C.
  8. What is the package type of the FCP190N65S3R0 MOSFET?
    The package type is TO-220-3.
  9. What are some typical applications of the FCP190N65S3R0 MOSFET?
    Typical applications include computing, consumer electronics, industrial applications, telecom/server, LCD/LED TV, LED lighting/ballast, and adapters.
  10. Does the FCP190N65S3R0 MOSFET undergo avalanche testing?
    Yes, it is 100% avalanche tested.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:17A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:190mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id:4.5V @ 1.7mA
Gate Charge (Qg) (Max) @ Vgs:33 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1350 pF @ 400 V
FET Feature:- 
Power Dissipation (Max):144W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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