Overview
The FCP125N65S3R0 is a high-voltage N-Channel MOSFET from onsemi, part of their SUPERFET III family. This MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge performance. It is designed to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rates, making it ideal for various high-power applications.
Key Specifications
| Parameter | Value |
|---|---|
| Channel Polarity | N-Channel |
| Maximum Drain-Source Voltage (Vds) | 650 V |
| Maximum Gate-Source Voltage (Vgs) | ±30 V |
| Maximum Gate-Threshold Voltage (Vgs(th)) | 4.5 V |
| Maximum Drain Current (Id) | 24 A |
| Maximum Junction Temperature (Tj) | 150 °C |
| Maximum Drain-Source On-State Resistance (Rds(on)) | 125 mΩ (typ. at Vgs = 10 V) |
| Total Gate Charge (Qg) | 46 nC (typ. at Vgs = 4.5 V) |
| Output Capacitance (Coss) | 40 pF |
| Maximum Power Dissipation (Pd) | 181 W |
| Package | TO-220 |
Key Features
- Ultra Low Gate Charge (Typ. Qg = 46 nC)
- Low Effective Output Capacitance (Typ. Coss(eff.) = 439 pF)
- Optimized Capacitance
- 100% Avalanche Tested
- RoHS Compliant
- Superior switching performance and low conduction loss
- Ability to withstand extreme dv/dt rates
- Easier design implementation and EMI management
Applications
- Telecommunication systems
- Cloud systems
- Industrial applications
- Telecom power systems
- Server power systems
- Electric Vehicle (EV) chargers
- Solar and UPS systems
Q & A
- What is the maximum drain-source voltage of the FCP125N65S3R0 MOSFET? The maximum drain-source voltage is 650 V.
- What is the maximum gate-source voltage for this MOSFET? The maximum gate-source voltage is ±30 V.
- What is the typical on-resistance of the FCP125N65S3R0? The typical on-resistance (Rds(on)) is 125 mΩ at Vgs = 10 V.
- What is the maximum drain current of this MOSFET? The maximum drain current is 24 A.
- What is the maximum junction temperature for the FCP125N65S3R0? The maximum junction temperature is 150 °C.
- Is the FCP125N65S3R0 RoHS compliant? Yes, it is RoHS compliant.
- What is the typical total gate charge of this MOSFET? The typical total gate charge (Qg) is 46 nC at Vgs = 4.5 V.
- What are some common applications for the FCP125N65S3R0? Common applications include telecommunication systems, cloud systems, industrial applications, telecom power systems, server power systems, EV chargers, and solar/UPS systems.
- What package type does the FCP125N65S3R0 come in? The FCP125N65S3R0 comes in a TO-220 package.
- Does the FCP125N65S3R0 have optimized capacitance? Yes, it has optimized capacitance.
