FCMT099N65S3
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onsemi FCMT099N65S3

Manufacturer No:
FCMT099N65S3
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 650V 30A POWER88
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FCMT099N65S3 is a high-voltage N-Channel SUPERFET III MOSFET from ON Semiconductor. This device is part of ON Semiconductor's advanced super-junction (SJ) MOSFET family, utilizing charge balance technology to achieve outstanding low on-resistance and lower gate charge performance. This technology minimizes conduction loss, provides superior switching performance, and withstands extreme dv/dt rates, making it highly suitable for various high-power switching applications.

Key Specifications

Parameter Value Unit
Drain to Source Voltage (VDSS) 650 V
Gate to Source Voltage (VGSS) ±30 V
Continuous Drain Current (ID) 30 A
Pulsed Drain Current (IDM) 75 A
Static Drain to Source On Resistance (RDS(on)) 87 - 99
Gate Threshold Voltage (VGS(th)) 2.5 - 4.5 V
Total Gate Charge (Qg) 56 nC
Thermal Resistance, Junction to Case (RθJC) 0.55 °C/W
Operating and Storage Temperature Range (TJ, TSTG) -55 to +150 °C

Key Features

  • 650 V drain to source voltage with a gate to source voltage of ±30 V
  • Typical on-resistance (RDS(on)) of 87 mΩ
  • Ultra-low gate charge (Typ. Qg = 56 nC)
  • Low effective output capacitance (Typ. Coss(eff.) = 500 pF)
  • 100% avalanche tested
  • Pb-free and RoHS compliant
  • Power88 package with low profile and small footprint (8x8 mm²), offering excellent switching performance due to lower parasitic source inductance and separated power and drive sources
  • Moisture Sensitivity Level 1 (MSL 1)

Applications

  • Telecom and server power supplies
  • Industrial power supplies
  • UPS and solar inverter applications
  • Adaptor applications

Q & A

  1. What is the maximum drain to source voltage of the FCMT099N65S3 MOSFET?

    The maximum drain to source voltage (VDSS) is 650 V.

  2. What is the typical on-resistance (RDS(on)) of the FCMT099N65S3?

    The typical on-resistance (RDS(on)) is 87 mΩ.

  3. What is the gate charge (Qg) of the FCMT099N65S3?

    The total gate charge (Qg) is typically 56 nC.

  4. What package does the FCMT099N65S3 come in?

    The FCMT099N65S3 comes in a Power88 package, which is an ultra-slim surface-mount package with a low profile and small footprint (8x8 mm²).

  5. Is the FCMT099N65S3 Pb-free and RoHS compliant?

    Yes, the FCMT099N65S3 is Pb-free and RoHS compliant.

  6. What are the typical applications of the FCMT099N65S3 MOSFET?

    The FCMT099N65S3 is typically used in telecom and server power supplies, industrial power supplies, UPS, and solar inverter applications.

  7. What is the maximum continuous drain current of the FCMT099N65S3?

    The maximum continuous drain current (ID) is 30 A at TC = 25°C and 19 A at TC = 100°C.

  8. What is the thermal resistance, junction to case (RθJC), of the FCMT099N65S3?

    The thermal resistance, junction to case (RθJC), is 0.55 °C/W.

  9. What is the operating and storage temperature range of the FCMT099N65S3?

    The operating and storage temperature range is -55 to +150 °C.

  10. Does the FCMT099N65S3 have any special handling requirements?

    The FCMT099N65S3 has a Moisture Sensitivity Level 1 (MSL 1), indicating it is relatively robust against moisture.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:30A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:99mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:4.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs:56 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2270 pF @ 400 V
FET Feature:- 
Power Dissipation (Max):227W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:Power88
Package / Case:4-PowerTSFN
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