Overview
The FCMT099N65S3 is a high-voltage N-Channel SUPERFET III MOSFET from ON Semiconductor. This device is part of ON Semiconductor's advanced super-junction (SJ) MOSFET family, utilizing charge balance technology to achieve outstanding low on-resistance and lower gate charge performance. This technology minimizes conduction loss, provides superior switching performance, and withstands extreme dv/dt rates, making it highly suitable for various high-power switching applications.
Key Specifications
Parameter | Value | Unit |
---|---|---|
Drain to Source Voltage (VDSS) | 650 | V |
Gate to Source Voltage (VGSS) | ±30 | V |
Continuous Drain Current (ID) | 30 | A |
Pulsed Drain Current (IDM) | 75 | A |
Static Drain to Source On Resistance (RDS(on)) | 87 - 99 | mΩ |
Gate Threshold Voltage (VGS(th)) | 2.5 - 4.5 | V |
Total Gate Charge (Qg) | 56 | nC |
Thermal Resistance, Junction to Case (RθJC) | 0.55 | °C/W |
Operating and Storage Temperature Range (TJ, TSTG) | -55 to +150 | °C |
Key Features
- 650 V drain to source voltage with a gate to source voltage of ±30 V
- Typical on-resistance (RDS(on)) of 87 mΩ
- Ultra-low gate charge (Typ. Qg = 56 nC)
- Low effective output capacitance (Typ. Coss(eff.) = 500 pF)
- 100% avalanche tested
- Pb-free and RoHS compliant
- Power88 package with low profile and small footprint (8x8 mm²), offering excellent switching performance due to lower parasitic source inductance and separated power and drive sources
- Moisture Sensitivity Level 1 (MSL 1)
Applications
- Telecom and server power supplies
- Industrial power supplies
- UPS and solar inverter applications
- Adaptor applications
Q & A
- What is the maximum drain to source voltage of the FCMT099N65S3 MOSFET?
The maximum drain to source voltage (VDSS) is 650 V.
- What is the typical on-resistance (RDS(on)) of the FCMT099N65S3?
The typical on-resistance (RDS(on)) is 87 mΩ.
- What is the gate charge (Qg) of the FCMT099N65S3?
The total gate charge (Qg) is typically 56 nC.
- What package does the FCMT099N65S3 come in?
The FCMT099N65S3 comes in a Power88 package, which is an ultra-slim surface-mount package with a low profile and small footprint (8x8 mm²).
- Is the FCMT099N65S3 Pb-free and RoHS compliant?
Yes, the FCMT099N65S3 is Pb-free and RoHS compliant.
- What are the typical applications of the FCMT099N65S3 MOSFET?
The FCMT099N65S3 is typically used in telecom and server power supplies, industrial power supplies, UPS, and solar inverter applications.
- What is the maximum continuous drain current of the FCMT099N65S3?
The maximum continuous drain current (ID) is 30 A at TC = 25°C and 19 A at TC = 100°C.
- What is the thermal resistance, junction to case (RθJC), of the FCMT099N65S3?
The thermal resistance, junction to case (RθJC), is 0.55 °C/W.
- What is the operating and storage temperature range of the FCMT099N65S3?
The operating and storage temperature range is -55 to +150 °C.
- Does the FCMT099N65S3 have any special handling requirements?
The FCMT099N65S3 has a Moisture Sensitivity Level 1 (MSL 1), indicating it is relatively robust against moisture.