Overview
The FCH099N65S3-F155 is a high-performance N-Channel MOSFET from onsemi, part of their SUPERFET® III family. This device is designed to offer outstanding low on-resistance and lower gate charge performance, making it ideal for applications requiring high efficiency and reliability. The SUPERFET III series utilizes charge balance technology to minimize conduction loss and provide superior switching performance, even under extreme dv/dt rates. This MOSFET is also engineered to manage EMI issues and facilitate easier design implementation.
Key Specifications
| Type | Description |
|---|---|
| Series | SUPERFET® III |
| Package | TO-247-3 |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 30 A |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| Rds On (Max) @ Id, Vgs | 99 mΩ @ 15 A, 10 V |
| Vgs(th) (Max) @ Id | 4.5 V @ 3 mA |
| Gate Charge (Qg) (Max) @ Vgs | 61 nC @ 10 V |
| Vgs (Max) | ±30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2480 pF @ 400 V |
| Power Dissipation (Max) | 227 W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
Key Features
- Ultra-low on-resistance (Rds(on)) of 79 mΩ (typical) and 99 mΩ (maximum) at Vgs = 10 V and Id = 15 A.
- Ultra-low gate charge (Qg) of 61 nC at Vgs = 10 V.
- Low effective output capacitance (Coss(eff.)) of 544 pF.
- 100% avalanche tested for robustness.
- Pb-free and RoHS compliant.
- Excellent switching performance and ability to withstand extreme dv/dt rates.
- Designed to manage EMI issues and facilitate easier design implementation).
Applications
- Telecom / Server Power Supplies
- Industrial Power Supplies
- UPS / Solar Systems
Q & A
- What is the drain to source voltage (Vdss) of the FCH099N65S3-F155 MOSFET?
The drain to source voltage (Vdss) is 650 V.
- What is the continuous drain current (Id) at 25°C for this MOSFET?
The continuous drain current (Id) at 25°C is 30 A).
- What is the maximum gate to source voltage (Vgs) for this device?
The maximum gate to source voltage (Vgs) is ±30 V).
- What is the typical on-resistance (Rds(on)) of the FCH099N65S3-F155?
The typical on-resistance (Rds(on)) is 79 mΩ at Vgs = 10 V and Id = 15 A).
- What is the gate charge (Qg) at Vgs = 10 V for this MOSFET?
The gate charge (Qg) at Vgs = 10 V is 61 nC).
- Is the FCH099N65S3-F155 Pb-free and RoHS compliant?
- What are the typical applications for the FCH099N65S3-F155 MOSFET?
The typical applications include Telecom / Server Power Supplies, Industrial Power Supplies, and UPS / Solar Systems).
- What is the operating temperature range for this MOSFET?
The operating temperature range is -55°C to 150°C (TJ)).
- What is the maximum power dissipation for the FCH099N65S3-F155 at 25°C?
The maximum power dissipation at 25°C is 227 W).
- What is the package type for the FCH099N65S3-F155?
The package type is TO-247-3).
