Overview
The FCH041N60F is a high-voltage N-channel MOSFET transistor manufactured by ON Semiconductor. It belongs to the SUPERFET II family, which utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge performance. This technology minimizes conduction loss, provides superior switching performance, and enhances avalanche energy, making it highly suitable for various switching power applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (VDSS) | 600 | V |
| Gate to Source Voltage (VGSS) | ±20 (DC), ±30 (AC, f > 1 Hz) | V |
| Continuous Drain Current (ID) at TC = 25°C | 76 | A |
| Continuous Drain Current (ID) at TC = 100°C | 48.1 | A |
| Pulsed Drain Current (IDM) | 228 | A |
| Single Pulsed Avalanche Energy (EAS) | 2025 | mJ |
| Avalanche Current (IAR) | 15 | A |
| Repetitive Avalanche Energy (EAR) | 5.95 | mJ |
| MOSFET dv/dt | 100 | V/ns |
| Power Dissipation (PD) at TC = 25°C | 595 | W |
| Derate Above 25°C | 4.76 | W/°C |
| Operating and Storage Temperature Range (TJ, TSTG) | −55 to +150 | °C |
| Maximum Lead Temperature for Soldering | 300 | °C |
| Typical On-Resistance (RDS(on)) at VGS = 10 V, ID = 38 A | 36 mΩ | mΩ |
| Typical Gate Charge (Qg) | 277 nC | nC |
| Low Effective Output Capacitance (Coss(eff.)) | 748 pF | pF |
Key Features
- Utilizes charge balance technology for outstanding low on-resistance and lower gate charge performance.
- Typical RDS(on) = 36 mΩ at VGS = 10 V, ID = 38 A.
- Ultra Low Gate Charge (Typ. Qg = 277 nC).
- Low Effective Output Capacitance (Typical Coss(eff.) = 748 pF).
- 100% Avalanche Tested.
- Qualified to AEC Q101 and PPAP Capable.
- Pb-Free, Halide Free, and RoHS Compliant.
- Optimized body diode reverse recovery performance to remove additional components and improve system reliability.
Applications
- Telecom / Server Power Supplies.
- Industrial Power Supplies.
- EV Charger.
- UPS / Solar.
- Automotive On Board Charger.
- Automotive DC/DC Converter for HEV.
- High Voltage Full Bridge and Half Bridge DC-DC.
- Interleaved Boost PFC, Boost PFC for HEV-EV automotive.
Q & A
- What is the maximum drain to source voltage (VDSS) of the FCH041N60F MOSFET?
The maximum drain to source voltage (VDSS) is 600 V.
- What is the continuous drain current (ID) at TC = 25°C?
The continuous drain current (ID) at TC = 25°C is 76 A.
- What is the typical on-resistance (RDS(on)) of the FCH041N60F?
The typical on-resistance (RDS(on)) is 36 mΩ at VGS = 10 V, ID = 38 A.
- What is the typical gate charge (Qg) of the FCH041N60F?
The typical gate charge (Qg) is 277 nC.
- Is the FCH041N60F MOSFET Pb-Free and RoHS Compliant?
Yes, the FCH041N60F is Pb-Free, Halide Free, and RoHS Compliant.
- What are some of the key applications for the FCH041N60F MOSFET?
Key applications include Telecom / Server Power Supplies, Industrial Power Supplies, EV Charger, UPS / Solar, and automotive applications such as On Board Charger and DC/DC Converter for HEV.
- What is the maximum operating temperature of the FCH041N60F MOSFET?
The maximum operating temperature is 150°C.
- What is the thermal resistance, junction to case (RJC), of the FCH041N60F?
The thermal resistance, junction to case (RJC), is 0.21 °C/W.
- Is the FCH041N60F MOSFET qualified to any specific automotive standards?
Yes, it is qualified to AEC Q101 and PPAP Capable.
- What is the package type of the FCH041N60F MOSFET?
The package type is TO-247.
