BS107ARL1G
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onsemi BS107ARL1G

Manufacturer No:
BS107ARL1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 200V 250MA TO92-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BS107ARL1G is a small signal N-Channel MOSFET produced by onsemi. This device is designed to operate within a range of applications requiring low power and high reliability. It is packaged in a TO-92 case, making it suitable for various electronic circuits where space is a consideration. The BS107ARL1G is AEC-Q101 qualified and PPAP capable, ensuring it meets stringent automotive standards.

Key Specifications

Parameter Symbol Min Typ Max Unit
Drain-Source Voltage VDS - - 200 Vdc
Gate-Source Voltage (Continuous) VGS - - ±20 Vdc
Gate-Source Voltage (Non-repetitive, tp ≤ 50 μs) VGSM - - ±30 Vdc
Drain Current (Continuous) ID - - 250 mAdc
Drain Current (Pulsed, tp ≤ 300 μs, Duty Cycle ≤ 2.0%) IDM - - 500 mAdc
Total Device Dissipation @ TA = 25°C PD - - 350 mW
Operating and Storage Junction Temperature Range TJ, Tstg -55 - 150 °C
Gate Threshold Voltage VGS(Th) 1.0 - 3.0 Vdc
Static Drain-Source On Resistance (VGS = 10 Vdc, ID = 250 mAdc) rDS(on) - - 6.4 Ω
Turn-On Time ton - 6.0 15 ns
Turn-Off Time toff - 12 15 ns

Key Features

  • AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications.
  • Pb-Free device, compliant with environmental regulations.
  • High drain-source voltage rating of 200 Vdc.
  • Low on-resistance (rDS(on)) of 6.4 Ω at VGS = 10 Vdc and ID = 250 mAdc.
  • Fast switching times with turn-on and turn-off times of 6.0 ns and 12 ns respectively.
  • Small TO-92 package, ideal for space-constrained designs.

Applications

  • Automotive systems due to its AEC-Q101 qualification.
  • Motor driver applications where high voltage and low on-resistance are required.
  • General-purpose switching and amplification in electronic circuits.
  • Power management and control circuits.

Q & A

  1. What is the maximum drain-source voltage rating of the BS107ARL1G?

    The maximum drain-source voltage rating is 200 Vdc.

  2. What is the continuous drain current rating of the BS107ARL1G?

    The continuous drain current rating is 250 mAdc.

  3. Is the BS107ARL1G Pb-Free?
  4. What is the gate threshold voltage range of the BS107ARL1G?

    The gate threshold voltage range is from 1.0 Vdc to 3.0 Vdc.

  5. What is the typical on-resistance of the BS107ARL1G at VGS = 10 Vdc and ID = 250 mAdc?

    The typical on-resistance is 6.4 Ω.

  6. What are the turn-on and turn-off times of the BS107ARL1G?

    The turn-on time is 6.0 ns and the turn-off time is 12 ns.

  7. What is the operating junction temperature range of the BS107ARL1G?

    The operating junction temperature range is from -55°C to 150°C.

  8. Is the BS107ARL1G suitable for automotive applications?
  9. What package type is the BS107ARL1G available in?

    The BS107ARL1G is available in a TO-92 package.

  10. What are some common applications of the BS107ARL1G?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:250mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:6.4Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id:3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:60 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):350mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-92 (TO-226)
Package / Case:TO-226-3, TO-92-3 Long Body (Formed Leads)
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Same Series
BS107AG
BS107AG
MOSFET N-CH 200V 250MA TO92-3
BS107ARL1
BS107ARL1
MOSFET N-CH 200V 250MA TO92-3
BS107G
BS107G
MOSFET N-CH 200V 250MA TO92-3

Similar Products

Part Number BS107ARL1G BS107ARL1
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 200 V
Current - Continuous Drain (Id) @ 25°C 250mA (Ta) 250mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 6.4Ohm @ 250mA, 10V 6.4Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id 3V @ 1mA 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 60 pF @ 25 V 60 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 350mW (Ta) 350mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-92 (TO-226) TO-92 (TO-226)
Package / Case TO-226-3, TO-92-3 Long Body (Formed Leads) TO-226-3, TO-92-3 Long Body (Formed Leads)

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