BMS3004-1E
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onsemi BMS3004-1E

Manufacturer No:
BMS3004-1E
Manufacturer:
onsemi
Package:
Tube
Description:
MOSFET P-CH 75V 68A TO220F-3SG
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BMS3004-1E, manufactured by onsemi, is a high-performance P-Channel MOSFET designed for advanced battery management systems. It is particularly suited for monitoring and balancing lithium-ion battery packs, ensuring the safety, longevity, and optimal performance of battery systems in various applications.

This MOSFET is part of the BMS30 series and is known for its efficient switching capabilities, making it ideal for high-power circuit designs.

Key Specifications

Parameter Description
Package Type TO-220-3 FullPak
Channel Polarity P-Channel
Configuration Single
V(BR)DSS Min (V) -75
VGS Max (V) 20
VGS(th) Max (V) 2.6
ID Max (A) -68
PD Max (W) 40
RDS(on) Max @ VGS = 4.5 V (mΩ) 11.4
RDS(on) Max @ VGS = 10 V (mΩ) 8.5
Qg Typ @ VGS = 10 V (nC) 300
Ciss Typ (pF) 13400

Key Features

  • High-performance lithium-ion battery management system.
  • Supports up to 15 cells in series.
  • Advanced safety features including overcharge and over-discharge protection.
  • Real-time voltage and temperature monitoring.
  • Compact and easy to install design.
  • Compatible with various battery types including LiFePO4 and Li-ion.

Applications

The BMS3004-1E is commonly used in several key applications:

  • Electric vehicles.
  • Energy storage systems.
  • Renewable energy applications.
  • Industrial, marine, and military applications where efficient management of battery systems is crucial.

Q & A

  1. What is the BMS3004-1E used for?

    The BMS3004-1E is used for monitoring and balancing lithium-ion battery packs, ensuring the safety, longevity, and optimal performance of battery systems.

  2. What is the package type of the BMS3004-1E?

    The package type of the BMS3004-1E is TO-220-3 FullPak.

  3. What is the maximum drain current of the BMS3004-1E?

    The maximum drain current of the BMS3004-1E is -68 A.

  4. What are the advanced safety features of the BMS3004-1E?

    The BMS3004-1E includes advanced safety features such as overcharge and over-discharge protection.

  5. Is the BMS3004-1E RoHS compliant?

    Yes, the BMS3004-1E is RoHS compliant.

  6. What are the typical applications of the BMS3004-1E?

    The BMS3004-1E is typically used in electric vehicles, energy storage systems, renewable energy applications, and industrial, marine, and military applications.

  7. What is the maximum power dissipation of the BMS3004-1E?

    The maximum power dissipation of the BMS3004-1E is 40 W.

  8. What is the RDS(on) of the BMS3004-1E at VGS = 10 V?

    The RDS(on) of the BMS3004-1E at VGS = 10 V is 8.5 mΩ.

  9. Is the BMS3004-1E compatible with different battery types?

    Yes, the BMS3004-1E is compatible with various battery types including LiFePO4 and Li-ion.

  10. What is the typical gate charge of the BMS3004-1E at VGS = 10 V?

    The typical gate charge of the BMS3004-1E at VGS = 10 V is 300 nC.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):75 V
Current - Continuous Drain (Id) @ 25°C:68A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4V, 10V
Rds On (Max) @ Id, Vgs:8.5mOhm @ 34A, 10V
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:300 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:13400 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):2W (Ta), 40W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220F-3SG
Package / Case:TO-220-3 Full Pack
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Similar Products

Part Number BMS3004-1E BMS3003-1E
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 75 V 60 V
Current - Continuous Drain (Id) @ 25°C 68A (Ta) 78A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V 4V, 10V
Rds On (Max) @ Id, Vgs 8.5mOhm @ 34A, 10V 6.5mOhm @ 39A, 10V
Vgs(th) (Max) @ Id - -
Gate Charge (Qg) (Max) @ Vgs 300 nC @ 10 V 285 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 13400 pF @ 20 V 13200 pF @ 20 V
FET Feature - -
Power Dissipation (Max) 2W (Ta), 40W (Tc) 2W (Ta), 40W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220F-3SG TO-220F-3SG
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack

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