Overview
The ATP216-TL-H is an N-Channel Power MOSFET produced by onsemi. This device is designed for high-performance switching applications, offering a balance of low on-resistance and high current handling capabilities. It is part of onsemi's portfolio of low to medium voltage MOSFETs, making it suitable for a variety of power management and switching tasks.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Breakdown Voltage (Vds) | 50 | V |
| Continuous Drain Current (Id) | 35 | A |
| Drain-Source On-Resistance (Rds On) | 23 | mΩ |
| Gate-Source Voltage (Vgs) | ±20 | V |
| Package Type | TO-220 (Single Gauge) / DPAK | |
| Maximum Junction Temperature | 150 | °C |
Key Features
- Low On-Resistance: The ATP216-TL-H features a low Rds On of 23 mΩ, which minimizes power losses and enhances efficiency in switching applications.
- High Current Handling: With a continuous drain current of 35 A, this MOSFET is capable of handling high current requirements.
- Robust Gate Voltage: The device can operate with a gate-source voltage range of ±20 V, providing flexibility in control circuit design.
- Compact Packaging: Available in TO-220 and DPAK packages, making it suitable for various board layouts and space constraints.
Applications
The ATP216-TL-H is versatile and can be used in a wide range of applications, including:
- Power Management: DC-DC converters, power supplies, and voltage regulators.
- Motor Control: Motor drives, servo motors, and other motor control systems.
- Automotive Systems: Battery management, starter systems, and other automotive power electronics.
- Industrial Automation: Control circuits, power amplifiers, and other industrial automation applications.
Q & A
- What is the drain-source breakdown voltage of the ATP216-TL-H?
The drain-source breakdown voltage (Vds) is 50 V. - What is the continuous drain current rating of the ATP216-TL-H?
The continuous drain current (Id) is 35 A. - What is the typical on-resistance of the ATP216-TL-H?
The typical drain-source on-resistance (Rds On) is 23 mΩ. - What are the package options for the ATP216-TL-H?
The ATP216-TL-H is available in TO-220 and DPAK packages. - What is the maximum junction temperature for the ATP216-TL-H?
The maximum junction temperature is 150°C. - Is the ATP216-TL-H suitable for high-frequency switching applications?
Yes, it is designed for high-performance switching applications. - Can the ATP216-TL-H be used in automotive systems?
Yes, it can be used in various automotive power electronics applications. - What is the gate-source voltage range for the ATP216-TL-H?
The gate-source voltage range is ±20 V. - Is the ATP216-TL-H available for purchase through major distributors?
Yes, it is available through distributors like Mouser, Digi-Key, and others. - Where can I find detailed specifications and datasheets for the ATP216-TL-H?
Detailed specifications and datasheets can be found on the onsemi website and through distributors like Mouser and Digi-Key.
