2SK3557-6-TB-EX
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onsemi 2SK3557-6-TB-EX

Manufacturer No:
2SK3557-6-TB-EX
Manufacturer:
onsemi
Package:
Bulk
Description:
N-CHANNEL SMALL SIGNAL MOSFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2SK3557-6-TB-EX is an N-Channel Junction Field-Effect Transistor (JFET) produced by onsemi. This device is designed for high-frequency and low-noise amplifier applications, making it suitable for various electronic systems requiring high performance and minimal noise. The 2SK3557 features an ultrasmall-sized package, specifically the SOT-23 (SC-59/CP3) package, which allows for compact and efficient circuit designs.

Key Specifications

ParameterSymbolConditionsRatingsUnit
Drain-to-Source VoltageVDSTa = 25°C15V
Gate-to-Drain VoltageVGDSTa = 25°C-15V
Gate CurrentIGTa = 25°C10mA
Drain CurrentIDTa = 25°C50mA
Allowable Power DissipationPDTa = 25°C200mW
Junction TemperatureTj150°C
Storage TemperatureTstg-55 to +150°C
Gate Cutoff CurrentIGSSVGS = -10 V, VDS = 0 V-1.0nA
Cutoff VoltageVGS(off)VDS = 5 V, ID = 100 μA-0.3 to -1.5V
Drain Current (IDSS)IDSSVDS = 5 V, VGS = 0 V10 to 32mA
Forward Transfer Admittance|yfs|VDS = 5 V, VGS = 0 V, f = 1 kHz24 to 35mS
Input CapacitanceCissVDS = 5 V, VGS = 0 V, f = 1 MHz10.0pF
Reverse Transfer CapacitanceCrssVDS = 5 V, VGS = 0 V, f = 1 MHz2.9pF
Noise FigureNFVDS = 5 V, Rg = 1 kΩ, ID = 1 mA, f = 1 kHz1.0dB

Key Features

  • Large Forward Transfer Admittance: The 2SK3557 offers a high forward transfer admittance, which is crucial for high-frequency and low-noise amplifier applications.
  • Small Input Capacitance (Ciss): With a small input capacitance, this JFET minimizes the impact on the input signal, ensuring high fidelity and low distortion.
  • Ultrasmall-sized Package: The SOT-23 (SC-59/CP3) package allows for compact circuit designs, making it ideal for space-constrained applications.
  • Ultralow Noise Figure: The device features an ultralow noise figure, which is essential for applications requiring minimal noise and high signal integrity.

Applications

  • AM Tuner RF Amplification: The 2SK3557 is suitable for use in AM tuner RF amplification due to its high frequency and low noise characteristics.
  • Low Noise Amplifier: It is widely used in low noise amplifier applications where minimal noise and high signal quality are critical.

Q & A

  1. What is the maximum drain-to-source voltage for the 2SK3557?
    The maximum drain-to-source voltage (VDS) is 15 V.
  2. What is the typical forward transfer admittance of the 2SK3557?
    The typical forward transfer admittance is 35 mS.
  3. What is the package type of the 2SK3557?
    The package type is SOT-23 (SC-59/CP3).
  4. What are the typical applications of the 2SK3557?
    The typical applications include AM tuner RF amplification and low noise amplifiers.
  5. What is the maximum allowable power dissipation for the 2SK3557?
    The maximum allowable power dissipation (PD) is 200 mW.
  6. What is the junction temperature range for the 2SK3557?
    The junction temperature range is up to 150°C.
  7. What is the storage temperature range for the 2SK3557?
    The storage temperature range is -55°C to +150°C.
  8. What is the noise figure of the 2SK3557?
    The noise figure (NF) is typically 1.0 dB at specific conditions.
  9. How is the 2SK3557 classified in terms of IDSS?
    The 2SK3557 is classified by IDSS as follows: Rank 6 (10 to 20 mA) and Rank 7 (16 to 32 mA).
  10. Is the 2SK3557 a Pb-Free device?
    Yes, the 2SK3557 is a Pb-Free device.

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
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