Overview
The 2N3904TAR is a general-purpose NPN bipolar junction transistor (BJT) manufactured by onsemi. It is widely used in various electronic circuits due to its robust performance and versatility. This transistor is housed in a TO-92-3 package, making it suitable for through-hole mounting. The 2N3904TAR is known for its reliability and is often used in amplifier, switching, and other general-purpose applications.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 40 | Vdc |
| Collector-Base Voltage | VCBO | 60 | Vdc |
| Emitter-Base Voltage | VEBO | 6.0 | Vdc |
| Collector Current - Continuous | IC | 200 | mAdc |
| Total Device Dissipation @ TA = 25°C | PD | 625 | mW |
| Thermal Resistance, Junction-to-Ambient | RθJA | 200 | °C/W |
| Current Gain (hFE) @ IC = 10 mA, VCE = 1.0 Vdc | hFE | 100 | |
| Collector-Emitter Saturation Voltage @ IC = 10 mA, IB = 1.0 mA | VCE(sat) | 0.2 | Vdc |
| Base-Emitter Saturation Voltage @ IC = 10 mA, IB = 1.0 mA | VBE(sat) | 0.65 | Vdc |
| Current-Gain - Bandwidth Product @ IC = 10 mA, VCE = 20 Vdc, f = 100 MHz | fT | 300 | MHz |
Key Features
- Pb-free packages available, making it suitable for RoHS-compliant designs.
- High current gain (hFE) of up to 100 at IC = 10 mA and VCE = 1.0 Vdc.
- Low collector-emitter saturation voltage (VCE(sat)) of 0.2 Vdc at IC = 10 mA and IB = 1.0 mA.
- High current-gain bandwidth product (fT) of 300 MHz.
- Low noise figure, suitable for amplifier applications.
- Compact TO-92-3 package for through-hole mounting.
Applications
The 2N3904TAR is versatile and can be used in a variety of applications, including:
- General-purpose amplifiers.
- Switching circuits.
- Audio amplifiers.
- Signal processing circuits.
- Automotive and industrial control systems.
Q & A
- What is the maximum collector-emitter voltage of the 2N3904TAR?
The maximum collector-emitter voltage (VCEO) is 40 Vdc. - What is the continuous collector current rating of the 2N3904TAR?
The continuous collector current (IC) is 200 mA. - What is the thermal resistance, junction-to-ambient, of the 2N3904TAR?
The thermal resistance, junction-to-ambient (RθJA), is 200 °C/W. - What is the typical current gain (hFE) of the 2N3904TAR at IC = 10 mA and VCE = 1.0 Vdc?
The typical current gain (hFE) is 100. - What is the collector-emitter saturation voltage (VCE(sat)) at IC = 10 mA and IB = 1.0 mA?
The collector-emitter saturation voltage (VCE(sat)) is 0.2 Vdc. - What is the base-emitter saturation voltage (VBE(sat)) at IC = 10 mA and IB = 1.0 mA?
The base-emitter saturation voltage (VBE(sat)) is 0.65 Vdc. - What is the current-gain bandwidth product (fT) of the 2N3904TAR?
The current-gain bandwidth product (fT) is 300 MHz. - Is the 2N3904TAR available in Pb-free packages?
Yes, Pb-free packages are available for the 2N3904TAR. - What is the typical noise figure of the 2N3904TAR?
The typical noise figure is around 6.0 dB. - What are some common applications of the 2N3904TAR?
Common applications include general-purpose amplifiers, switching circuits, audio amplifiers, signal processing circuits, and automotive and industrial control systems.
