Overview
The 2N3906TAR is a general-purpose PNP silicon transistor manufactured by onsemi. This transistor is widely used in various electronic circuits due to its robust performance and versatility. It is available in a TO-92 package, making it suitable for a range of applications from small signal amplification to switching circuits.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 40 | Vdc |
| Collector-Base Voltage | VCBO | 40 | Vdc |
| Emitter-Base Voltage | VEBO | 5.0 | Vdc |
| Collector Current - Continuous | IC | 200 | mAdc |
| Total Device Dissipation @ TA = 25°C | PD | 625 | mW |
| Operating and Storage Junction Temperature Range | TJ, Tstg | -55 to +150 | °C |
| Thermal Resistance, Junction-to-Ambient | RJA | 200 | °C/W |
| DC Current Gain (IC = 10 mAdc, VCE = 1.0 Vdc) | hFE | 100 | - |
| Collector-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) | VCE(sat) | 0.25 | Vdc |
| Base-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) | VBE(sat) | 0.65 | Vdc |
Key Features
- Pb-Free Packages Available: The 2N3906TAR is available in lead-free packages, making it compliant with environmental regulations.
- High Current Gain: The transistor has a high DC current gain (hFE) ranging from 60 to 300, depending on the collector current.
- Low Saturation Voltage: It features low collector-emitter and base-emitter saturation voltages, which are beneficial for reducing power consumption in switching applications.
- Wide Operating Temperature Range: The transistor can operate over a temperature range of -55°C to +150°C, making it suitable for various environmental conditions.
- Fast Switching Times: The 2N3906TAR has fast switching times, including delay, rise, storage, and fall times, which are essential for high-speed applications.
Applications
- Amplifier Circuits: The 2N3906TAR is commonly used in small signal amplifier circuits due to its high current gain and low noise figure.
- Switching Circuits: Its fast switching times and low saturation voltages make it ideal for use in switching circuits, such as in power supplies and motor control systems.
- Audio Circuits: The transistor is suitable for audio applications due to its good small-signal characteristics and low noise figure.
- General Purpose Circuits: It can be used in a variety of general-purpose electronic circuits, including voltage regulators, signal processing, and more.
Q & A
- What is the maximum collector-emitter voltage of the 2N3906TAR transistor?
The maximum collector-emitter voltage (VCEO) is 40 Vdc.
- What is the continuous collector current rating of the 2N3906TAR?
The continuous collector current (IC) is 200 mA.
- What is the operating temperature range of the 2N3906TAR?
The operating and storage junction temperature range is -55°C to +150°C.
- What are the typical values for the DC current gain (hFE) of the 2N3906TAR?
The DC current gain (hFE) ranges from 60 to 300, depending on the collector current.
- What are the typical values for the collector-emitter saturation voltage (VCE(sat))?
The collector-emitter saturation voltage (VCE(sat)) is typically 0.25 Vdc for IC = 10 mA and IB = 1 mA.
- What are the typical values for the base-emitter saturation voltage (VBE(sat))?
The base-emitter saturation voltage (VBE(sat)) is typically 0.65 Vdc for IC = 10 mA and IB = 1 mA.
- What is the thermal resistance, junction-to-ambient (RJA), of the 2N3906TAR?
The thermal resistance, junction-to-ambient (RJA), is approximately 200 °C/W.
- What are the switching times for the 2N3906TAR transistor?
The switching times include delay time (td) of up to 35 ns, rise time (tr) of up to 35 ns, storage time (ts) of up to 225 ns, and fall time (tf) of up to 75 ns.
- Is the 2N3906TAR suitable for audio applications?
Yes, the transistor is suitable for audio applications due to its good small-signal characteristics and low noise figure.
- What package type is the 2N3906TAR available in?
The 2N3906TAR is available in a TO-92 package.
