2N3906TA
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onsemi 2N3906TA

Manufacturer No:
2N3906TA
Manufacturer:
onsemi
Package:
Cut Tape (CT)
Description:
TRANS PNP 40V 0.2A TO92-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N3906TA is a general-purpose PNP silicon transistor manufactured by onsemi. It is widely used in various electronic circuits due to its robust performance and reliability. This transistor is available in several package options, including the TO-92 package, and is also offered in Pb-free versions to comply with environmental regulations.

Key Specifications

CharacteristicSymbolMinMaxUnit
Collector-Emitter VoltageVCEO-40Vdc
Collector-Base VoltageVCBO-40Vdc
Emitter-Base VoltageVEBO-5.0Vdc
Collector Current - ContinuousIC-200mAdc
Total Device Dissipation @ TA = 25°CPD-625mW
Operating and Storage Junction Temperature RangeTJ, Tstg-55150°C
Thermal Resistance, Junction-to-AmbientRθJA-200°C/W
DC Current Gain (IC = 1.0 mAdc, VCE = 1.0 Vdc)hfe100400-
Delay Time (VCC = 3.0 Vdc, VBE = 0.5 Vdc, IC = 10 mAdc)td-35ns

Key Features

  • Pb-free packages available, making it compliant with environmental regulations.
  • High DC current gain (hfe) ranging from 100 to 400.
  • Low noise figure, suitable for audio and other low-noise applications.
  • Fast switching times with delay, rise, storage, and fall times optimized for high-speed applications.
  • Wide operating and storage junction temperature range from -55°C to 150°C.

Applications

The 2N3906TA transistor is versatile and can be used in a variety of applications, including:

  • General-purpose switching and amplification.
  • Audio circuits due to its low noise figure.
  • Automotive and industrial control systems.
  • Consumer electronics such as radios, TVs, and other household appliances.
  • Educational projects and prototyping due to its ease of use and availability.

Q & A

  1. What is the maximum collector-emitter voltage for the 2N3906TA transistor?
    The maximum collector-emitter voltage (VCEO) is 40 Vdc.
  2. What is the maximum collector current for the 2N3906TA transistor?
    The maximum collector current (IC) is 200 mAdc.
  3. What is the operating temperature range for the 2N3906TA transistor?
    The operating and storage junction temperature range is from -55°C to 150°C.
  4. Is the 2N3906TA transistor available in Pb-free packages?
    Yes, Pb-free packages are available for the 2N3906TA transistor.
  5. What is the typical DC current gain (hfe) for the 2N3906TA transistor?
    The typical DC current gain (hfe) ranges from 100 to 400.
  6. What are the typical switching times for the 2N3906TA transistor?
    The typical delay time (td) is 35 ns, rise time (tr) is 35 ns, storage time (ts) is 225 ns, and fall time (tf) is 75 ns.
  7. What are some common applications for the 2N3906TA transistor?
    Common applications include general-purpose switching and amplification, audio circuits, automotive and industrial control systems, and consumer electronics.
  8. What is the thermal resistance, junction-to-ambient (RθJA), for the 2N3906TA transistor?
    The thermal resistance, junction-to-ambient (RθJA), is approximately 200 °C/W.
  9. How many units are typically shipped in bulk for the 2N3906TA transistor?
    The 2N3906TA is typically shipped in bulk quantities of 5000 units.
  10. What is the noise figure for the 2N3906TA transistor?
    The noise figure (NF) is typically up to 4.0 dB.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):200 mA
Voltage - Collector Emitter Breakdown (Max):40 V
Vce Saturation (Max) @ Ib, Ic:400mV @ 5mA, 50mA
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 10mA, 1V
Power - Max:625 mW
Frequency - Transition:250MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package:TO-92-3
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Similar Products

Part Number 2N3906TA 2N3906TAR 2N3906TF 2N3904TA 2N3905TA
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Obsolete
Transistor Type PNP PNP PNP NPN PNP
Current - Collector (Ic) (Max) 200 mA 200 mA 200 mA 200 mA 200 mA
Voltage - Collector Emitter Breakdown (Max) 40 V 40 V 40 V 40 V 40 V
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 50mA 400mV @ 5mA, 50mA 400mV @ 5mA, 50mA 300mV @ 5mA, 50mA 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max) - - - - -
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 1V 100 @ 10mA, 1V 100 @ 10mA, 1V 100 @ 10mA, 1V 50 @ 10mA, 1V
Power - Max 625 mW 625 mW 625 mW 625 mW 625 mW
Frequency - Transition 250MHz 250MHz 250MHz 300MHz -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package TO-92-3 TO-92-3 TO-92-3 TO-92-3 TO-92-3

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