Overview
The 2N3906TFR is a general-purpose PNP silicon transistor produced by onsemi. It is designed for low-power surface mount applications and is housed in the SOT-363/SC-88 package. This transistor is widely used in various electronic circuits due to its robust performance and reliability. It is suitable for general-purpose amplifier applications and is known for its versatility in different operating conditions.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 40 | Vdc |
| Collector-Base Voltage | VCBO | 40 | Vdc |
| Emitter-Base Voltage | VEBO | 5.0 | Vdc |
| Collector Current - Continuous | IC | 200 | mAdc |
| Total Device Dissipation @ TA = 25°C | PD | 625 | mW |
| Thermal Resistance, Junction-to-Ambient | RθJA | 200 | °C/W |
| Operating and Storage Junction Temperature Range | TJ, Tstg | -55 to +150 | °C |
| DC Current Gain (IC = 10 mAdc, VCE = 1.0 Vdc) | hFE | 60 - 300 | |
| Collector-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) | VCE(sat) | 0.25 | Vdc |
| Base-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) | VBE(sat) | 0.65 - 0.85 | Vdc |
Key Features
- Pb-Free Packages Available: The 2N3906TFR is available in lead-free packages, making it compliant with environmental regulations.
- General Purpose Amplifier: Suitable for a wide range of general-purpose amplifier applications.
- Low Power Consumption: Designed for low-power surface mount applications.
- High Current Gain: Offers a DC current gain (hFE) ranging from 60 to 300, depending on the collector current.
- Low Saturation Voltages: Features low collector-emitter and base-emitter saturation voltages, enhancing efficiency in switching and amplifier circuits.
- Wide Operating Temperature Range: Operates over a temperature range of -55°C to +150°C, making it suitable for various environmental conditions.
Applications
- General Purpose Amplifiers: Used in various amplifier circuits for audio, signal processing, and other general-purpose applications.
- Switching Circuits: Suitable for switching applications due to its low saturation voltages and fast switching times.
- Automotive Electronics: Can be used in automotive systems due to its robust performance over a wide temperature range.
- Consumer Electronics: Found in consumer electronic devices such as audio equipment, televisions, and other household appliances.
- Industrial Control Systems: Used in industrial control systems for signal amplification and switching.
Q & A
- What is the maximum collector-emitter voltage for the 2N3906TFR?
The maximum collector-emitter voltage (VCEO) is 40 Vdc.
- What is the typical DC current gain (hFE) of the 2N3906TFR?
The DC current gain (hFE) ranges from 60 to 300, depending on the collector current.
- What is the thermal resistance, junction-to-ambient (RθJA) for the 2N3906TFR?
The thermal resistance, junction-to-ambient (RθJA), is 200 °C/W.
- What is the operating and storage junction temperature range for the 2N3906TFR?
The operating and storage junction temperature range is -55°C to +150°C.
- Is the 2N3906TFR available in Pb-Free packages?
- What are the typical collector-emitter and base-emitter saturation voltages for the 2N3906TFR?
The typical collector-emitter saturation voltage (VCE(sat)) is 0.25 Vdc, and the base-emitter saturation voltage (VBE(sat)) is between 0.65 Vdc and 0.85 Vdc.
- What are some common applications of the 2N3906TFR?
The 2N3906TFR is commonly used in general-purpose amplifiers, switching circuits, automotive electronics, consumer electronics, and industrial control systems.
- What is the maximum collector current for the 2N3906TFR?
The maximum collector current (IC) is 200 mAdc.
- What is the total device dissipation at TA = 25°C for the 2N3906TFR?
The total device dissipation at TA = 25°C is 625 mW.
- What is the current-gain-bandwidth product (fT) for the 2N3906TFR?
The current-gain-bandwidth product (fT) is 250 MHz.
