2N3904TFR
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onsemi 2N3904TFR

Manufacturer No:
2N3904TFR
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN 40V 0.2A TO92-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N3904TFR is a general-purpose NPN bipolar junction transistor (BJT) manufactured by onsemi. It is designed to serve as both an amplifier and a switch, offering a wide range of applications in electronic circuits. The transistor is known for its reliability, robust performance, and versatility in various operating conditions.

Key Specifications

ParameterSymbolValueUnit
Collector-Emitter VoltageVCEO40V
Collector-Base VoltageVCBO60V
Emitter-Base VoltageVEBO6.0V
Collector Current - ContinuousIC200mA
Operating and Storage Junction Temperature RangeTJ, TSTG-55 to +150°C
Total Device Dissipation at TA = 25°CPD625mW
Derate Above 25°C5.0mW/°C
Thermal Resistance, Junction to AmbientRθJA200°C/W
DC Current Gain (IC = 1.0 mA, VCE = 1.0 V)hFE70
Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 1.0 mA)VCE(sat)0.2V
Base-Emitter Saturation Voltage (IC = 10 mA, IB = 1.0 mA)VBE(sat)0.65 - 0.85V

Key Features

  • General-purpose amplifier and switch
  • High current gain (hFE) up to 300 at IC = 10 mA
  • Low collector-emitter saturation voltage (VCE(sat)) of 0.2 V at IC = 10 mA, IB = 1.0 mA
  • Wide operating temperature range from -55°C to +150°C
  • High collector-emitter breakdown voltage (VCEO) of 40 V
  • Pb-free packages available
  • Small signal current-gain bandwidth product (fT) of 300 MHz at IC = 10 mA, VCE = 20 V

Applications

The 2N3904TFR transistor is suitable for a variety of applications, including:

  • General-purpose amplification in audio and signal processing circuits
  • Switching applications in digital circuits
  • Automotive and industrial control systems
  • Consumer electronics such as radios, TVs, and other audio/video equipment
  • Medical devices requiring reliable and stable transistor performance

Q & A

  1. What is the maximum collector-emitter voltage (VCEO) of the 2N3904TFR transistor?
    The maximum collector-emitter voltage (VCEO) is 40 V.
  2. What is the continuous collector current (IC) rating of the 2N3904TFR?
    The continuous collector current (IC) rating is 200 mA.
  3. What is the operating temperature range for the 2N3904TFR transistor?
    The operating temperature range is from -55°C to +150°C.
  4. What is the typical DC current gain (hFE) of the 2N3904TFR at IC = 1.0 mA and VCE = 1.0 V?
    The typical DC current gain (hFE) is 70.
  5. What is the collector-emitter saturation voltage (VCE(sat)) at IC = 10 mA and IB = 1.0 mA?
    The collector-emitter saturation voltage (VCE(sat)) is 0.2 V.
  6. Is the 2N3904TFR available in Pb-free packages?
    Yes, the 2N3904TFR is available in Pb-free packages.
  7. What is the thermal resistance from junction to ambient (RθJA) for the 2N3904TFR?
    The thermal resistance from junction to ambient (RθJA) is 200 °C/W.
  8. What is the small signal current-gain bandwidth product (fT) of the 2N3904TFR?
    The small signal current-gain bandwidth product (fT) is 300 MHz at IC = 10 mA, VCE = 20 V.
  9. Can the 2N3904TFR be used in high-frequency applications?
    Yes, the 2N3904TFR can be used in high-frequency applications up to 100 MHz.
  10. What are some common applications of the 2N3904TFR transistor?
    The 2N3904TFR is commonly used in general-purpose amplification, switching applications, automotive and industrial control systems, consumer electronics, and medical devices.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):200 mA
Voltage - Collector Emitter Breakdown (Max):40 V
Vce Saturation (Max) @ Ib, Ic:300mV @ 5mA, 50mA
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 10mA, 1V
Power - Max:625 mW
Frequency - Transition:300MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package:TO-92-3
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Similar Products

Part Number 2N3904TFR 2N3906TFR 2N3905TFR 2N3904TAR 2N3904TF
Manufacturer onsemi onsemi Fairchild Semiconductor onsemi onsemi
Product Status Active Active Obsolete Active Active
Transistor Type NPN PNP PNP NPN NPN
Current - Collector (Ic) (Max) 200 mA 200 mA 200 mA 200 mA 200 mA
Voltage - Collector Emitter Breakdown (Max) 40 V 40 V 40 V 40 V 40 V
Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 50mA 400mV @ 5mA, 50mA 400mV @ 5mA, 50mA 300mV @ 5mA, 50mA 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max) - - - - -
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 1V 100 @ 10mA, 1V 50 @ 10mA, 1V 100 @ 10mA, 1V 100 @ 10mA, 1V
Power - Max 625 mW 625 mW 625 mW 625 mW 625 mW
Frequency - Transition 300MHz 250MHz - 300MHz 300MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package TO-92-3 TO-92-3 TO-92-3 TO-92-3 TO-92-3

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