Overview
The 2N3904TFR is a general-purpose NPN bipolar junction transistor (BJT) manufactured by onsemi. It is designed to serve as both an amplifier and a switch, offering a wide range of applications in electronic circuits. The transistor is known for its reliability, robust performance, and versatility in various operating conditions.
Key Specifications
Parameter | Symbol | Value | Unit |
---|---|---|---|
Collector-Emitter Voltage | VCEO | 40 | V |
Collector-Base Voltage | VCBO | 60 | V |
Emitter-Base Voltage | VEBO | 6.0 | V |
Collector Current - Continuous | IC | 200 | mA |
Operating and Storage Junction Temperature Range | TJ, TSTG | -55 to +150 | °C |
Total Device Dissipation at TA = 25°C | PD | 625 | mW |
Derate Above 25°C | 5.0 | mW/°C | |
Thermal Resistance, Junction to Ambient | RθJA | 200 | °C/W |
DC Current Gain (IC = 1.0 mA, VCE = 1.0 V) | hFE | 70 | |
Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 1.0 mA) | VCE(sat) | 0.2 | V |
Base-Emitter Saturation Voltage (IC = 10 mA, IB = 1.0 mA) | VBE(sat) | 0.65 - 0.85 | V |
Key Features
- General-purpose amplifier and switch
- High current gain (hFE) up to 300 at IC = 10 mA
- Low collector-emitter saturation voltage (VCE(sat)) of 0.2 V at IC = 10 mA, IB = 1.0 mA
- Wide operating temperature range from -55°C to +150°C
- High collector-emitter breakdown voltage (VCEO) of 40 V
- Pb-free packages available
- Small signal current-gain bandwidth product (fT) of 300 MHz at IC = 10 mA, VCE = 20 V
Applications
The 2N3904TFR transistor is suitable for a variety of applications, including:
- General-purpose amplification in audio and signal processing circuits
- Switching applications in digital circuits
- Automotive and industrial control systems
- Consumer electronics such as radios, TVs, and other audio/video equipment
- Medical devices requiring reliable and stable transistor performance
Q & A
- What is the maximum collector-emitter voltage (VCEO) of the 2N3904TFR transistor?
The maximum collector-emitter voltage (VCEO) is 40 V. - What is the continuous collector current (IC) rating of the 2N3904TFR?
The continuous collector current (IC) rating is 200 mA. - What is the operating temperature range for the 2N3904TFR transistor?
The operating temperature range is from -55°C to +150°C. - What is the typical DC current gain (hFE) of the 2N3904TFR at IC = 1.0 mA and VCE = 1.0 V?
The typical DC current gain (hFE) is 70. - What is the collector-emitter saturation voltage (VCE(sat)) at IC = 10 mA and IB = 1.0 mA?
The collector-emitter saturation voltage (VCE(sat)) is 0.2 V. - Is the 2N3904TFR available in Pb-free packages?
Yes, the 2N3904TFR is available in Pb-free packages. - What is the thermal resistance from junction to ambient (RθJA) for the 2N3904TFR?
The thermal resistance from junction to ambient (RθJA) is 200 °C/W. - What is the small signal current-gain bandwidth product (fT) of the 2N3904TFR?
The small signal current-gain bandwidth product (fT) is 300 MHz at IC = 10 mA, VCE = 20 V. - Can the 2N3904TFR be used in high-frequency applications?
Yes, the 2N3904TFR can be used in high-frequency applications up to 100 MHz. - What are some common applications of the 2N3904TFR transistor?
The 2N3904TFR is commonly used in general-purpose amplification, switching applications, automotive and industrial control systems, consumer electronics, and medical devices.