PSMN9R5-100PS,127
  • Share:

NXP Semiconductors PSMN9R5-100PS,127

Manufacturer No:
PSMN9R5-100PS,127
Manufacturer:
NXP Semiconductors
Package:
Bulk
Description:
NEXPERIA PSMN9R5-100PS - 89A, 10
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PSMN9R5-100PS,127 is a high-performance N-channel MOSFET designed and manufactured by Nexperia, which was previously part of NXP Semiconductors. This device is optimized for use in a wide range of industrial, communications, and domestic equipment. Although it has been discontinued, it remains a significant component in many existing systems.

Key Specifications

Parameter Value
Channel Type N Channel
Drain Source Voltage (Vds) 100 V
Continuous Drain Current (Id) @ 25°C 89 A
Minimum Operating Temperature -55°C
Maximum Operating Temperature +175°C
Power Dissipation (Pd) 211 W
Drive Voltage (Max Rds On, Min Rds On) 10 V
Number of Elements 1 Element

Key Features

  • High Continuous Drain Current: The PSMN9R5-100PS,127 can handle a continuous drain current of 89 A, making it suitable for high-power applications.
  • Wide Operating Temperature Range: The device operates from -55°C to +175°C, ensuring reliability in various environmental conditions.
  • High Power Dissipation: With a power dissipation of 211 W, this MOSFET is designed to handle demanding power requirements.
  • Low On-Resistance: The device features a low on-resistance, which minimizes energy losses and enhances overall efficiency.

Applications

  • Industrial Equipment: Suitable for use in industrial control systems, power supplies, and motor control applications.
  • Communications Equipment: Used in telecommunications and networking devices where high power handling is required.
  • Domestic Equipment: Found in various household appliances and power management systems.

Q & A

  1. What is the maximum drain source voltage of the PSMN9R5-100PS,127?

    The maximum drain source voltage is 100 V.

  2. What is the continuous drain current rating of this MOSFET?

    The continuous drain current rating is 89 A at 25°C.

  3. What is the operating temperature range of this device?

    The operating temperature range is from -55°C to +175°C.

  4. What is the power dissipation capability of the PSMN9R5-100PS,127?

    The power dissipation capability is 211 W.

  5. Is the PSMN9R5-100PS,127 still in production?

    No, this product has been discontinued.

  6. What type of channel does the PSMN9R5-100PS,127 have?

    It is an N-channel MOSFET.

  7. What is the drive voltage for this MOSFET?

    The drive voltage is up to 10 V.

  8. How many elements are in the PSMN9R5-100PS,127?

    It contains 1 element.

  9. What are some common applications for this MOSFET?

    It is used in industrial, communications, and domestic equipment.

  10. Who is the manufacturer of the PSMN9R5-100PS,127?

    The manufacturer is Nexperia, which was previously part of NXP Semiconductors.

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
0 Remaining View Similar

In Stock

$0.96
361

Please send RFQ , we will respond immediately.

Similar Products

Part Number PSMN9R5-100PS,127 PSMN9R5-100XS,127
Manufacturer NXP Semiconductors NXP USA Inc.
Product Status Active Obsolete
FET Type - N-Channel
Technology - MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) - 100 V
Current - Continuous Drain (Id) @ 25°C - 44.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - 10V
Rds On (Max) @ Id, Vgs - 9.6mOhm @ 10A, 10V
Vgs(th) (Max) @ Id - 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - 81.5 nC @ 10 V
Vgs (Max) - ±20V
Input Capacitance (Ciss) (Max) @ Vds - 4454 pF @ 50 V
FET Feature - -
Power Dissipation (Max) - 52.6W (Tc)
Operating Temperature - -55°C ~ 175°C (TJ)
Mounting Type - Through Hole
Supplier Device Package - TO-220F
Package / Case - TO-220-3 Full Pack, Isolated Tab

Related Product By Categories

IRF5305PBF
IRF5305PBF
Infineon Technologies
MOSFET P-CH 55V 31A TO220AB
NTH4LN019N65S3H
NTH4LN019N65S3H
onsemi
POWER MOSFET, N-CHANNEL, SUPERFE
IRLML0040TRPBF
IRLML0040TRPBF
Infineon Technologies
MOSFET N-CH 40V 3.6A SOT23
CSD18534Q5AT
CSD18534Q5AT
Texas Instruments
MOSFET N-CHANNEL 60V 50A 8VSON
STL220N6F7
STL220N6F7
STMicroelectronics
MOSFET N-CH 60V 120A POWERFLAT
STP24NM60N
STP24NM60N
STMicroelectronics
MOSFET N-CH 600V 17A TO220
NX7002AKVL
NX7002AKVL
Nexperia USA Inc.
MOSFET N-CH 60V 190MA TO236AB
BBS3002-TL-1E
BBS3002-TL-1E
onsemi
MOSFET P-CH 60V 100A D2PAK
STP80PF55
STP80PF55
STMicroelectronics
MOSFET P-CH 55V 80A TO220AB
MTB30P06VT4G
MTB30P06VT4G
onsemi
MOSFET P-CH 60V 30A D2PAK
2SJ652-1E
2SJ652-1E
onsemi
MOSFET P-CH 60V 28A TO220F-3SG
NTNS3A65PZT5GHW
NTNS3A65PZT5GHW
onsemi
MOSFET P-CH 20V 281MA SOT883

Related Product By Brand

BCV62,215
BCV62,215
NXP Semiconductors
NEXPERIA BCV62 - SMALL SIGNAL BI
BUK9275-100A,118
BUK9275-100A,118
NXP Semiconductors
NOW NEXPERIA BUK9275-100A - 21.7
LPC11U35FBD64/401,
LPC11U35FBD64/401,
NXP Semiconductors
LPC11U35 - 64KB FLASH, 10KB SRAM
NX3DV42GU/S500115
NX3DV42GU/S500115
NXP Semiconductors
NX3DV42 - DUAL HIGH-SPEED USB 2.
74HC4049D,652
74HC4049D,652
NXP Semiconductors
NEXPERIA 74HC4049D - INVERTER, H
74HCT240D,652
74HCT240D,652
NXP Semiconductors
NEXPERIA 74HCT240D - BUS DRIVER,
74ALVCH16245DGG:11
74ALVCH16245DGG:11
NXP Semiconductors
NEXPERIA 74ALVCH16245 - 16-BIT T
74AHC74D,112
74AHC74D,112
NXP Semiconductors
NEXPERIA 74AHC74D - D FLIP-FLOP,
74HC175D,652
74HC175D,652
NXP Semiconductors
NEXPERIA 74HC175D - D FLIP-FLOP,
74AHC08D,118
74AHC08D,118
NXP Semiconductors
NEXPERIA 74AHC08D - AND GATE, AH
74HCT154PW,112
74HCT154PW,112
NXP Semiconductors
NEXPERIA 74HCT154PW - DECODER/DR
PTVS15VP1UP115
PTVS15VP1UP115
NXP Semiconductors
NOW NEXPERIA PTVS15VP1UP - TRANS