BC857A,215
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NXP Semiconductors BC857A,215

Manufacturer No:
BC857A,215
Manufacturer:
NXP Semiconductors
Package:
Bulk
Description:
NEXPERIA BC857A - SMALL SIGNAL B
Delivery:
Payment:
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Product Introduction

Overview

The BC857A,215 is a PNP general-purpose bipolar junction transistor (BJT) produced by NXP Semiconductors. It is packaged in a surface-mount TO-236AB (SOT23) case, making it suitable for a wide range of electronic applications where space is limited. This transistor is known for its reliability and versatility in various circuit designs.

Key Specifications

ParameterValueUnit
Collector-Base Voltage (VCBO)-50V
Collector-Emitter Voltage (VCEO)-45V
Emitter-Base Voltage (VEBO)-5V
Collector Current (IC)-100mA
Peak Collector Current (ICM)-200mA
Peak Base Current (IBM)-200mA
Total Power Dissipation (Ptot)250mW
Operating Ambient Temperature (Tamb)-65 to 150°C
Junction Temperature (Tj)-150°C
DC Current Gain (hFE)125 - 800
Collector-Emitter Saturation Voltage (VCEsat)-75 to -300mV

Key Features

  • PNP General-Purpose Transistor: Suitable for a wide range of applications including amplifiers, switches, and voltage regulators.
  • Surface Mount Package: TO-236AB (SOT23) package for compact designs.
  • High Current Gain: DC current gain (hFE) ranges from 125 to 800, ensuring reliable performance in various circuits.
  • Low Saturation Voltage: Collector-emitter saturation voltage (VCEsat) as low as -75 mV, which is beneficial for reducing power consumption.
  • Wide Operating Temperature Range: Operates from -65°C to 150°C, making it suitable for diverse environmental conditions.

Applications

The BC857A,215 transistor is versatile and can be used in various electronic circuits, including:

  • Amplifiers: As a general-purpose amplifier in audio, video, and other signal processing applications.
  • Switches: In switching circuits where high current gain and low saturation voltage are required.
  • Voltage Regulators: To regulate voltage in power supply circuits.
  • Automotive Electronics: Due to its wide operating temperature range, it is suitable for use in automotive systems.
  • Consumer Electronics: In devices such as televisions, radios, and other consumer electronic products.

Q & A

  1. What is the package type of the BC857A,215 transistor?
    The BC857A,215 transistor is packaged in a surface-mount TO-236AB (SOT23) case.
  2. What is the maximum collector current of the BC857A,215 transistor?
    The maximum collector current (IC) is -100 mA.
  3. What is the maximum collector-emitter voltage of the BC857A,215 transistor?
    The maximum collector-emitter voltage (VCEO) is -45 V.
  4. What is the typical DC current gain (hFE) of the BC857A,215 transistor?
    The DC current gain (hFE) ranges from 125 to 800.
  5. What is the operating ambient temperature range of the BC857A,215 transistor?
    The operating ambient temperature range is from -65°C to 150°C.
  6. What is the total power dissipation of the BC857A,215 transistor?
    The total power dissipation (Ptot) is 250 mW.
  7. What are some common applications of the BC857A,215 transistor?
    It is commonly used in amplifiers, switches, voltage regulators, automotive electronics, and consumer electronics.
  8. What is the collector-emitter saturation voltage (VCEsat) of the BC857A,215 transistor?
    The collector-emitter saturation voltage (VCEsat) ranges from -75 mV to -300 mV.
  9. Is the BC857A,215 transistor suitable for high-frequency applications?
    Yes, it has a high frequency response, with a typical frequency of 100 MHz.
  10. Where can I find detailed specifications for the BC857A,215 transistor?
    Detailed specifications can be found in the datasheet available on the NXP Semiconductors website or through distributors like Digi-Key and Mouser.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:125 @ 2mA, 5V
Power - Max:250 mW
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:TO-236AB
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Similar Products

Part Number BC857A,215 BC857B,215 BC857,215
Manufacturer NXP Semiconductors Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active
Transistor Type PNP PNP PNP
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 125 @ 2mA, 5V 220 @ 2mA, 5V 125 @ 2mA, 5V
Power - Max 250 mW 250 mW 250 mW
Frequency - Transition 100MHz 100MHz 100MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package TO-236AB TO-236AB TO-236AB

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