PSMN8R5-100PS127
  • Share:

NXP USA Inc. PSMN8R5-100PS127

Manufacturer No:
PSMN8R5-100PS127
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
N-CHANNEL POWER MOSFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PSMN8R5-100PSF is a NextPower 100 V, 8.7 mΩ N-channel MOSFET produced by Nexperia, which was previously part of NXP USA Inc. This MOSFET is designed for high-efficiency switching applications and is qualified to operate up to 175 °C. Although the product has been discontinued, it remains relevant for understanding high-performance MOSFETs in various industrial and consumer applications.

Key Specifications

Type number Package version Package name Product status Channel type Nr of transistors V DS [max] (V) R DSon [max] @ V GS = 10 V (mΩ) T j [max] (°C) I D [max] (A) Q GD [typ] (nC) Q G(tot) [typ] @ V GS = 10 V (nC) P tot [max] (W) Q r [typ] (nC) V GSth [typ] (V) Automotive qualified C iss [typ] (pF) C oss [typ] (pF)
PSMN8R5-100PSF SOT78 TO-220AB End of life N 1 100 8.7 175 98 8.7 44.5 183 70 3.1 N 3181 551

Key Features

  • Optimised for fast switching, low spiking, high efficiency
  • Low QGx RDSonFOM for high efficiency switching applications
  • Low body diode losses (Qrr) and fast recovery (trr)
  • Strong avalanche energy rating (EAS) and 100% tested
  • Avalanche rated
  • Ha-free & RoHS compliant TO220 package

Applications

  • Synchronous rectification in AC-to-DC and DC-to-DC applications
  • Brushed & BLDC motor control
  • UPS & solar inverter
  • LED lighting
  • Battery protection
  • Full-bridge & half-bridge applications
  • Flyback & resonant topologies

Q & A

  1. What is the maximum operating temperature of the PSMN8R5-100PSF MOSFET?

    The maximum operating temperature is 175 °C.

  2. What is the maximum drain-source voltage (V DS) for this MOSFET?

    The maximum drain-source voltage (V DS) is 100 V.

  3. What is the typical on-resistance (R DSon) at V GS = 10 V?

    The typical on-resistance (R DSon) at V GS = 10 V is 8.7 mΩ.

  4. Is the PSMN8R5-100PSF MOSFET automotive qualified?

    No, the PSMN8R5-100PSF MOSFET is not automotive qualified.

  5. What are the key features of this MOSFET?

    The key features include optimized for fast switching, low spiking, high efficiency, low QGx RDSonFOM, low body diode losses, strong avalanche energy rating, and RoHS compliance.

  6. What are some common applications for this MOSFET?

    Common applications include synchronous rectification, motor control, UPS & solar inverters, LED lighting, battery protection, full-bridge & half-bridge applications, and flyback & resonant topologies.

  7. What is the maximum power dissipation (P tot) for this MOSFET?

    The maximum power dissipation (P tot) is 183 W.

  8. Is the PSMN8R5-100PSF MOSFET still available for purchase?

    No, the PSMN8R5-100PSF MOSFET has been discontinued.

  9. What package type does the PSMN8R5-100PSF MOSFET use?

    The MOSFET uses a TO-220AB (SOT78) package).

  10. What is the typical gate-source threshold voltage (V GSth)?

    The typical gate-source threshold voltage (V GSth) is 3.1 V).

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
0 Remaining View Similar

In Stock

-
276

Please send RFQ , we will respond immediately.

Same Series
DD15S2S5WV50/AA
DD15S2S5WV50/AA
CONN D-SUB HD RCPT 15P SLDR CUP
RD15S10HT20/AA
RD15S10HT20/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S20LV3S/AA
DD15S20LV3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HV50/AA
CBC13W3S10HV50/AA
CONN D-SUB RCPT 13POS CRIMP
CBC13W3S10HE30/AA
CBC13W3S10HE30/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S20000/AA
DD26S20000/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0T2X
DD26S2S0T2X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50TX/AA
DD26S2S50TX/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20Z0S
DD15S20Z0S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S50T20
DD26S2S50T20
CONN D-SUB HD RCPT 26P SLDR CUP
CBC17W2S10HT2S/AA
CBC17W2S10HT2S/AA
CONN D-SUB RCPT 17POS CRIMP
DD26S20WTX
DD26S20WTX
CONN D-SUB HD RCPT 26P SLDR CUP

Related Product By Categories

FQD2N90TM
FQD2N90TM
onsemi
MOSFET N-CH 900V 1.7A DPAK
BSS84KW-TP
BSS84KW-TP
Micro Commercial Co
MOSFET P-CH 50V 130MA SOT323
FDB12N50TM
FDB12N50TM
onsemi
MOSFET N-CH 500V 11.5A D2PAK
IPW65R080CFDAFKSA1
IPW65R080CFDAFKSA1
Infineon Technologies
MOSFET N-CH 650V 43.3A TO247-3
STN1NK80Z
STN1NK80Z
STMicroelectronics
MOSFET N-CH 800V 250MA SOT223
NTMFS5C468NLT1G
NTMFS5C468NLT1G
onsemi
MOSFET N-CH 40V 5DFN
NTMFS002P03P8ZT1G
NTMFS002P03P8ZT1G
onsemi
MOSFET, POWER -30V P-CHANNEL, SO
BSS138K-7
BSS138K-7
Diodes Incorporated
MOSFET N-CH 50V SOT23 T&R 3K
STW15NB50
STW15NB50
STMicroelectronics
MOSFET N-CH 500V 14.6A TO247-3
STD85N3LH5
STD85N3LH5
STMicroelectronics
MOSFET N-CH 30V 80A DPAK
STP24N65M2
STP24N65M2
STMicroelectronics
MOSFET N-CH 650V 16A TO220
FDMC8010ET30
FDMC8010ET30
onsemi
MOSFET N-CH 30V 30A/174A POWER33

Related Product By Brand

BZX84J-C27/L115
BZX84J-C27/L115
NXP USA Inc.
DIODE ZENER
BFU520VL
BFU520VL
NXP USA Inc.
RF TRANS NPN 12V 10.5GHZ SOT143B
2N7002T,215
2N7002T,215
NXP USA Inc.
MOSFET N-CH 60V 300MA TO236AB
74LVC1GX04GW/C4125
74LVC1GX04GW/C4125
NXP USA Inc.
74LVC1GX04GW - CLOCK GENERATOR
MK20FN1M0VLQ12R
MK20FN1M0VLQ12R
NXP USA Inc.
IC MCU 32BIT 1MB FLASH 144LQFP
SPC5777CDK3MMO3
SPC5777CDK3MMO3
NXP USA Inc.
IC MCU 32BIT 8MB FLASH 516MAPBGA
LS1043AXE8QQB
LS1043AXE8QQB
NXP USA Inc.
QORIQ 4XCPU 64-BIT ARM ARCH 1.
TJA1055T/2Z
TJA1055T/2Z
NXP USA Inc.
IC TRANSCEIVER 1/1 14SO
TDA8026ET/C2518
TDA8026ET/C2518
NXP USA Inc.
IC SMART CARD SLOT 64TFBGA
BGU7224X
BGU7224X
NXP USA Inc.
IC RF AMP ISM 2.4GHZ 6HXSON
PCF7941ATSM2AB120,
PCF7941ATSM2AB120,
NXP USA Inc.
IC REMOTE KEYLESS ENTRY 20SSOP
MPXAZ6115AP
MPXAZ6115AP
NXP USA Inc.
PRESSURE SENSOR ABSOLUTE 8-SOP