PSMN8R5-100PS127
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NXP USA Inc. PSMN8R5-100PS127

Manufacturer No:
PSMN8R5-100PS127
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
N-CHANNEL POWER MOSFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PSMN8R5-100PSF is a NextPower 100 V, 8.7 mΩ N-channel MOSFET produced by Nexperia, which was previously part of NXP USA Inc. This MOSFET is designed for high-efficiency switching applications and is qualified to operate up to 175 °C. Although the product has been discontinued, it remains relevant for understanding high-performance MOSFETs in various industrial and consumer applications.

Key Specifications

Type number Package version Package name Product status Channel type Nr of transistors V DS [max] (V) R DSon [max] @ V GS = 10 V (mΩ) T j [max] (°C) I D [max] (A) Q GD [typ] (nC) Q G(tot) [typ] @ V GS = 10 V (nC) P tot [max] (W) Q r [typ] (nC) V GSth [typ] (V) Automotive qualified C iss [typ] (pF) C oss [typ] (pF)
PSMN8R5-100PSF SOT78 TO-220AB End of life N 1 100 8.7 175 98 8.7 44.5 183 70 3.1 N 3181 551

Key Features

  • Optimised for fast switching, low spiking, high efficiency
  • Low QGx RDSonFOM for high efficiency switching applications
  • Low body diode losses (Qrr) and fast recovery (trr)
  • Strong avalanche energy rating (EAS) and 100% tested
  • Avalanche rated
  • Ha-free & RoHS compliant TO220 package

Applications

  • Synchronous rectification in AC-to-DC and DC-to-DC applications
  • Brushed & BLDC motor control
  • UPS & solar inverter
  • LED lighting
  • Battery protection
  • Full-bridge & half-bridge applications
  • Flyback & resonant topologies

Q & A

  1. What is the maximum operating temperature of the PSMN8R5-100PSF MOSFET?

    The maximum operating temperature is 175 °C.

  2. What is the maximum drain-source voltage (V DS) for this MOSFET?

    The maximum drain-source voltage (V DS) is 100 V.

  3. What is the typical on-resistance (R DSon) at V GS = 10 V?

    The typical on-resistance (R DSon) at V GS = 10 V is 8.7 mΩ.

  4. Is the PSMN8R5-100PSF MOSFET automotive qualified?

    No, the PSMN8R5-100PSF MOSFET is not automotive qualified.

  5. What are the key features of this MOSFET?

    The key features include optimized for fast switching, low spiking, high efficiency, low QGx RDSonFOM, low body diode losses, strong avalanche energy rating, and RoHS compliance.

  6. What are some common applications for this MOSFET?

    Common applications include synchronous rectification, motor control, UPS & solar inverters, LED lighting, battery protection, full-bridge & half-bridge applications, and flyback & resonant topologies.

  7. What is the maximum power dissipation (P tot) for this MOSFET?

    The maximum power dissipation (P tot) is 183 W.

  8. Is the PSMN8R5-100PSF MOSFET still available for purchase?

    No, the PSMN8R5-100PSF MOSFET has been discontinued.

  9. What package type does the PSMN8R5-100PSF MOSFET use?

    The MOSFET uses a TO-220AB (SOT78) package).

  10. What is the typical gate-source threshold voltage (V GSth)?

    The typical gate-source threshold voltage (V GSth) is 3.1 V).

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
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Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
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