PSMN2R9-30MLC/GFX
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NXP USA Inc. PSMN2R9-30MLC/GFX

Manufacturer No:
PSMN2R9-30MLC/GFX
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
PSMN2R9-30MLC/GFX
Delivery:
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Product Introduction

Overview

The PSMN2R9-30MLC/GFX is a logic level enhancement mode N-channel MOSFET designed and manufactured by Nexperia (formerly part of NXP USA Inc.). This MOSFET is optimized for use in a wide range of industrial, communications, and domestic equipment. It utilizes Nexperia's NextPower Superjunction technology, which offers low parasitic inductance and resistance, making it highly efficient for various applications.

Key Specifications

Parameter Value Unit
Type Number PSMN2R9-30MLC -
Package LFPAK33 (SOT1210) -
Channel Type N-channel -
VDS (max) 30 V
RDSon (max) @ VGS = 10 V 2.95
RDSon (max) @ VGS = 4.5 V; @25°C 3.8
Tj (max) 175 °C
ID (max) 70 A
QGD (typ) 4.4 nC
QG(tot) (typ) @ VGS = 4.5 V 16.7 nC
Ptot (max) 91 W
VGSth (typ) 1.78 V

Key Features

  • Optimized for 4.5V Gate drive using NextPower Superjunction technology.
  • Ultra low QG, QGD, & QOSS for high system efficiencies at low and high loads.
  • Low parasitic inductance and resistance.
  • Logic level enhancement mode N-channel MOSFET.
  • LFPAK33 package, which is a plastic, single-ended surface-mounted package with 8 leads.

Applications

  • DC-to-DC converters.
  • Load switching.
  • Synchronous buck regulators.
  • Industrial equipment.
  • Communications equipment.
  • Domestic equipment.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the PSMN2R9-30MLC?

    The maximum drain-source voltage (VDS) is 30 V.

  2. What is the typical on-resistance (RDSon) at VGS = 4.5 V?

    The typical on-resistance (RDSon) at VGS = 4.5 V is 3.8 mΩ.

  3. What is the maximum junction temperature (Tj)?

    The maximum junction temperature (Tj) is 175°C.

  4. What is the maximum continuous drain current (ID)?

    The maximum continuous drain current (ID) is 70 A.

  5. What are the typical gate-drain charge (QGD) and total gate charge (QG(tot)) at VGS = 4.5 V?

    The typical gate-drain charge (QGD) is 4.4 nC, and the total gate charge (QG(tot)) at VGS = 4.5 V is 16.7 nC.

  6. What is the maximum total power dissipation (Ptot)?

    The maximum total power dissipation (Ptot) is 91 W.

  7. What is the typical threshold voltage (VGSth)?

    The typical threshold voltage (VGSth) is 1.78 V.

  8. In what package is the PSMN2R9-30MLC available?

    The PSMN2R9-30MLC is available in the LFPAK33 (SOT1210) package.

  9. What technology is used in the PSMN2R9-30MLC?

    The PSMN2R9-30MLC uses Nexperia's NextPower Superjunction technology.

  10. What are some common applications for the PSMN2R9-30MLC?

    Common applications include DC-to-DC converters, load switching, synchronous buck regulators, industrial equipment, communications equipment, and domestic equipment.

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
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