Overview
The PSMN1R4-40YLD,115 is a high-performance N-channel MOSFET produced by NXP USA Inc., now part of Nexperia. This device is designed for high-power switching applications and features advanced TrenchMOS Superjunction technology. It is part of the NextPower-S3 series, known for its superfast switching and soft recovery characteristics.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Type Number | PSMN1R4-40YLD | - |
| Package | LFPAK56 (Power-SO8, SOT669) | - |
| Channel Type | N-channel | - |
| VDS (max) | 40 | V |
| RDSon (max) @ VGS = 10 V | 1.4 | mΩ |
| RDSon (max) @ VGS = 4.5 V; @25°C | 1.85 | mΩ |
| Tj (max) | 175 | °C |
| ID (max) | 240 | A |
| QGD (typ) | 13 | nC |
| QG(tot) (typ) @ VGS = 4.5 V | 45 | nC |
| QG(tot) (typ) @ VGS = 10 V | 96 | nC |
| Ptot (max) | 238 | W |
| Qr (typ) | 61 | nC |
| VGSth (typ) | 1.7 | V |
Key Features
- Avalanche rated, 100% tested at IAS = 190 A, ensuring robustness under high stress conditions.
- NextPower-S3 technology delivers superfast switching with soft recovery, enhancing system efficiency and reducing EMI.
- Low QRR, QG, and QGD for high system efficiency and low EMI designs.
- Schottky-Plus body-diode for soft switching without high IDSS leakage.
- Optimized for 4.5 V gate drive, utilizing NextPower-S3 Superjunction technology.
- High reliability LFPAK (Power SO8) package with copper-clip, solder die attach, and qualified to 175°C.
- Exposed leads can be wave soldered, allowing for visual solder joint inspection and high-quality solder joints.
- Low parasitic inductance and resistance.
Applications
- Synchronous rectification.
- DC-to-DC converters.
- High-performance and high-efficiency server power supplies.
- Motor control.
- Power OR-ing.
This MOSFET is suitable for various high-power switching applications across industries such as automotive, industrial, power, computing, and consumer electronics.
Q & A
- What is the maximum drain-source voltage (VDS) of the PSMN1R4-40YLD?
The maximum drain-source voltage (VDS) is 40 V.
- What is the on-resistance (RDSon) at VGS = 10 V?
The on-resistance (RDSon) at VGS = 10 V is 1.4 mΩ.
- What is the maximum junction temperature (Tj)?
The maximum junction temperature (Tj) is 175°C.
- What is the maximum drain current (ID)?
The maximum drain current (ID) is 240 A.
- What technology is used in the PSMN1R4-40YLD?
The PSMN1R4-40YLD uses NextPower-S3 technology with TrenchMOS Superjunction technology.
- What are the key benefits of the Schottky-Plus body-diode?
The Schottky-Plus body-diode provides soft switching without the associated high IDSS leakage.
- What is the package type of the PSMN1R4-40YLD?
The package type is LFPAK56 (Power SO8, SOT669).
- What are some common applications for this MOSFET?
Common applications include synchronous rectification, DC-to-DC converters, high-performance server power supplies, motor control, and power OR-ing.
- Is the PSMN1R4-40YLD suitable for automotive applications?
- How can I obtain samples of the PSMN1R4-40YLD?
Samples can be obtained through Nexperia's sales organization or through their network of global and regional distributors.
