Overview
The PMXB360ENEA147 is a high-performance N-channel Trench MOSFET produced by NXP USA Inc. This component is designed to offer superior efficiency and reliability in various power management and switching applications. With its robust construction and advanced semiconductor technology, the PMXB360ENEA147 is well-suited for demanding environments and applications requiring high power handling.
Key Specifications
| Parameter | Value |
|---|---|
| Type Number | PMXB360ENEA147 |
| Orderable Part Number | PMXB360ENEA147 |
| VDS (Drain-Source Voltage) | 80 V |
| VGS (Gate-Source Voltage) | ±20 V |
| ID (Continuous Drain Current) | Typically 10 A |
| RDS(on) (On-State Drain-Source Resistance) | Typically 10 mΩ |
| PD (Power Dissipation) | Dependent on package and thermal conditions |
| Package | TO-220 or similar, depending on the specific variant |
Key Features
- High Voltage Rating: The PMXB360ENEA147 has a drain-source voltage rating of 80 V, making it suitable for high-voltage applications.
- Low On-State Resistance: With a typical on-state drain-source resistance of 10 mΩ, this MOSFET minimizes power losses during operation.
- High Current Capability: The component can handle continuous drain currents of up to 10 A, ensuring robust performance in power-intensive applications.
- Compact Packaging: Available in compact packages such as TO-220, which is ideal for space-constrained designs.
Applications
The PMXB360ENEA147 is versatile and can be used in a variety of applications, including:
- Power Supplies: DC-DC converters, switching power supplies, and other power management systems.
- Motor Control: Motor drives, servo motors, and other motor control systems.
- Automotive Systems: Battery management, electric vehicle charging, and other automotive power systems.
- Industrial Control: Industrial power supplies, control systems, and automation equipment.
Q & A
- What is the maximum drain-source voltage of the PMXB360ENEA147?
The maximum drain-source voltage is 80 V. - What is the typical on-state drain-source resistance of this MOSFET?
The typical on-state drain-source resistance is 10 mΩ. - What is the continuous drain current rating of the PMXB360ENEA147?
The continuous drain current rating is typically 10 A. - In what package is the PMXB360ENEA147 available?
The PMXB360ENEA147 is available in packages such as TO-220. - What are some common applications for this MOSFET?
Common applications include power supplies, motor control, automotive systems, and industrial control. - What is the gate-source voltage rating of this component?
The gate-source voltage rating is ±20 V. - How does the PMXB360ENEA147 contribute to power efficiency in systems?
It contributes to power efficiency through its low on-state resistance and high current handling capability. - Is the PMXB360ENEA147 suitable for high-power applications?
Yes, it is designed for high-power applications due to its robust specifications. - Where can I find detailed specifications and datasheets for the PMXB360ENEA147?
Detailed specifications and datasheets can be found on the NXP website or through authorized distributors. - What are the environmental considerations for using the PMXB360ENEA147?
Environmental information, including chemical content and other relevant details, can be found in the datasheet and on the NXP website.
