PMV65XP/MI215
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NXP USA Inc. PMV65XP/MI215

Manufacturer No:
PMV65XP/MI215
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
P-CHANNEL MOSFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMV65XP,215 is a 20 V, single P-channel Trench MOSFET produced by Nexperia (formerly part of NXP USA Inc.). This MOSFET is designed in an enhancement mode and is packaged in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD). It is part of Nexperia’s extensive portfolio of MOSFETs, which are widely used across various industries including automotive, industrial, power, computing, consumer, mobile, and wearables.

This component is known for its high efficiency and reliability, making it a preferred choice for applications requiring low on-resistance and high current handling capabilities.

Key Specifications

Parameter Value Unit
Channel Type P Channel -
Drain Source Voltage (Vds) 20 V
Continuous Drain Current (Id) @ 25°C 4.3 A
On Resistance (Rds(on)) @ Vgs = 4.5 V 74
Gate Source Threshold Voltage (Vgs(th)) 0.9 V
Maximum Gate Source Voltage (Vgs) ±12 V
Operating Temperature Range -55°C to 150°C °C
Power Dissipation (Pd) 833 mW
Package Type SOT23 (TO-236AB) -
Moisture Sensitivity Level (MSL) 1 (Unlimited) -
RoHS Compliance Yes -

Key Features

  • Low On-Resistance: The PMV65XP,215 features a low on-resistance of 74 mΩ at Vgs = 4.5 V, making it suitable for high-efficiency applications.
  • High Current Handling: It can handle a continuous drain current of up to 4.3 A at 25°C.
  • Compact Package: The SOT23 (TO-236AB) package is small and surface-mountable, ideal for space-constrained designs.
  • Wide Operating Temperature Range: The MOSFET operates over a temperature range of -55°C to 150°C, ensuring reliability in various environmental conditions.
  • Environmental Compliance: The component is RoHS compliant and lead-free, adhering to environmental regulations.

Applications

The PMV65XP,215 is versatile and can be used in a variety of applications across different industries:

  • Automotive Systems: Suitable for automotive electronics due to its robustness and wide operating temperature range.
  • Industrial Control: Used in industrial control systems where high reliability and efficiency are crucial.
  • Power Management: Ideal for power management circuits requiring low on-resistance and high current handling.
  • Consumer Electronics: Found in consumer electronics such as chargers, power supplies, and other portable devices.
  • Mobile and Wearable Devices: Used in mobile and wearable devices due to its compact size and high efficiency.

Q & A

  1. What is the maximum drain-source voltage (Vds) of the PMV65XP,215?

    The maximum drain-source voltage (Vds) is 20 V.

  2. What is the continuous drain current (Id) at 25°C for the PMV65XP,215?

    The continuous drain current (Id) at 25°C is 4.3 A.

  3. What is the on-resistance (Rds(on)) of the PMV65XP,215 at Vgs = 4.5 V?

    The on-resistance (Rds(on)) at Vgs = 4.5 V is 74 mΩ.

  4. What is the gate source threshold voltage (Vgs(th)) of the PMV65XP,215?

    The gate source threshold voltage (Vgs(th)) is approximately 0.9 V.

  5. What is the maximum operating temperature of the PMV65XP,215?

    The maximum operating temperature is 150°C.

  6. Is the PMV65XP,215 RoHS compliant?

    Yes, the PMV65XP,215 is RoHS compliant.

  7. What is the moisture sensitivity level (MSL) of the PMV65XP,215?

    The moisture sensitivity level (MSL) is 1 (Unlimited).

  8. In what package is the PMV65XP,215 available?

    The PMV65XP,215 is available in the SOT23 (TO-236AB) package.

  9. What are some common applications of the PMV65XP,215?

    Common applications include automotive systems, industrial control, power management, consumer electronics, and mobile/wearable devices.

  10. Is the PMV65XP,215 lead-free?

    Yes, the PMV65XP,215 is lead-free and halogen-free.

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
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